JP5815180B2 - ウィスカ集合体の製造方法 - Google Patents
ウィスカ集合体の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims description 245
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 19
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000005407 aluminoborosilicate glass Substances 0.000 claims description 7
- 239000005354 aluminosilicate glass Substances 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 7
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 7
- 239000005388 borosilicate glass Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 43
- 239000007789 gas Substances 0.000 description 41
- 239000000126 substance Substances 0.000 description 38
- 238000000034 method Methods 0.000 description 37
- 230000015572 biosynthetic process Effects 0.000 description 29
- 229910021332 silicide Inorganic materials 0.000 description 24
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 24
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000010248 power generation Methods 0.000 description 7
- 239000010941 cobalt Substances 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 5
- 230000001737 promoting effect Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910021357 chromium silicide Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052990 silicon hydride Inorganic materials 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
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- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
Description
本実施の形態では、開示する発明の一態様に係るウィスカ集合体の製造方法について、説明する。なお本実施の形態で説明するウィスカ集合体の製造方法は、種原子層が成膜されていない基板上に、種原子を含まないシリコンウィスカ集合体を直接成長させることができる方法である。
本実施の形態では、開示する発明の一態様に係るウィスカ集合体の別の製造方法について、説明する。なお本実施の形態で説明するウィスカ集合体の製造方法は、種原子層が成膜されていない基板上に、種原子を含まないシリコンウィスカ集合体を直接成長させることができる方法である。
101 被形成基板
102 ウィスカ集合体
103 シリサイド
104 ウィスカ集合体
105 ポリシリコン層
200 基板
201 種原子層
202 シリサイド
300 第1の種基板
301 被形成基板
302 ウィスカ集合体
303 シリサイド
304 ウィスカ集合体
305 第2の種基板
306 ウィスカ集合体
307 ウィスカ集合体
308 ポリシリコン層
309 ポリシリコン層
310 シリサイド
100a 種原子層
100b 基板
201a 種原子
201b 種原子
203a ウィスカ単体
203b ウィスカ単体
204a ウィスカ単体
204b ウィスカ単体
300a 種原子層
300b 基板
305a 種原子層
305b 基板
Claims (7)
- 第1の基板の種原子層が成膜された面と、種原子層を有さない第2の基板の一方の面とを対向させ、
シリコンを含むガスを導入し、化学気相成長を行って、前記第2の基板の前記一方の面からウィスカ集合体を成長させる工程を有し、
前記第1の基板及び前記第2の基板の各々は、アルミノシリケートガラス基板、バリウムホウケイ酸ガラス基板、アルミノホウケイ酸ガラス基板、サファイア基板、又は石英基板であり、
前記第1の基板と、前記第2の基板との間の距離は、1.0cm乃至3.0cmであり、
前記種原子層の膜厚は、10nm乃至50nmであることを特徴とするウィスカ集合体の製造方法。 - 第1の基板の一方の面上に種原子層を成膜し、
前記第1の基板の前記一方の面と、種原子層を有さない第2の基板の一方の面とを対向させ、
シリコンを含むガスを導入し、化学気相成長を行って、前記第2の基板の前記一方の面からウィスカ集合体を成長させ、
前記第1の基板及び前記第2の基板の各々は、アルミノシリケートガラス基板、バリウムホウケイ酸ガラス基板、アルミノホウケイ酸ガラス基板、サファイア基板、又は石英基板であり、
前記第1の基板と、前記第2の基板との間の距離は、1.0cm乃至3.0cmであり、
前記種原子層の膜厚は、10nm乃至50nmであることを特徴とするウィスカ集合体の製造方法。 - 第1の基板の第1の種原子層が成膜された面と、種原子層を有さない第2の基板の一方の面とを対向させ、かつ第3の基板の第2の種原子層が成膜された面と、前記第2の基板の他方の面とを対向させ、
シリコンを含むガスを導入し、化学気相成長を行って、前記第2の基板の前記一方の面及び前記第2の基板の前記他方の面からウィスカ集合体を成長させ、
前記第1の基板及び前記第2の基板の各々は、アルミノシリケートガラス基板、バリウムホウケイ酸ガラス基板、アルミノホウケイ酸ガラス基板、サファイア基板、又は石英基板であり、
前記第1の基板と前記第2の基板との間の距離、及び前記第3の基板と前記第2の基板との間の距離は、それぞれ、1.0cm乃至3.0cmであり、
前記第1の種原子層及び前記第2の種原子層の各々の膜厚は、10nm乃至50nmであることを特徴とするウィスカ集合体の製造方法。 - 第1の基板の一方の面上に第1の種原子層を成膜し、
第3の基板の一方の面上に第2の種原子層を成膜し、
前記第1の基板の前記一方の面と、種原子層を有さない第2の基板の一方の面とを対向させ、かつ前記第3の基板の前記一方の面と、前記第2の基板の他方の面とを対向させ、
シリコンを含むガスを導入し、化学気相成長を行って、前記第2の基板の前記一方の面及び前記第2の基板の前記他方の面からウィスカ集合体を成長させ、
前記第1の基板及び前記第2の基板の各々は、アルミノシリケートガラス基板、バリウムホウケイ酸ガラス基板、アルミノホウケイ酸ガラス基板、サファイア基板、又は石英基板であり、
前記第1の基板と前記第2の基板との間の距離、及び前記第3の基板と前記第2の基板との間の距離は、それぞれ、1.0cm乃至3.0cmであり、
前記第1の種原子層及び前記第2の種原子層の各々の膜厚は、10nm乃至50nmであることを特徴とするウィスカ集合体の製造方法。 - 請求項1乃至4のいずれか一において、
前記ウィスカ集合体を成長させる工程は、減圧化学気相成長装置を用いて行うことを特徴とするウィスカ集合体の製造方法。 - 請求項1乃至5のいずれか一において、
前記ウィスカ集合体を成長させる工程は、600℃乃至700℃の温度、20Pa乃至200Paの圧力、300sccm乃至3000sccmのSiH4ガス流量、及び0sccm乃至1000sccmのN2ガス流量下で行われることを特徴とするウィスカ集合体の製造方法。 - 請求項1乃至6のいずれか一において、
前記ウィスカ集合体に含まれるウィスカ単体は、その幅が50nm乃至300nmで、その直径が100nm乃至400nmで、その長さが700nm乃至800nmであることを特徴とするウィスカ集合体の製造方法。
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JP2012102005A JP2012102005A (ja) | 2012-05-31 |
JP2012102005A5 JP2012102005A5 (ja) | 2014-11-20 |
JP5815180B2 true JP5815180B2 (ja) | 2015-11-17 |
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AU2015901A (en) * | 1999-12-21 | 2001-07-03 | Plastic Logic Limited | Inkjet-fabricated integrated circuits |
JP2001210315A (ja) | 2000-01-25 | 2001-08-03 | Sanyo Electric Co Ltd | リチウム二次電池用電極及びこれを用いたリチウム二次電池 |
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KR100677771B1 (ko) * | 2005-03-31 | 2007-02-02 | 주식회사 하이닉스반도체 | 무촉매층으로 성장시킨 나노튜브를 갖는 캐패시터 및 그의제조 방법 |
US7449776B2 (en) * | 2005-05-10 | 2008-11-11 | Hewlett-Packard Development Company, L.P. | Cooling devices that use nanowires |
US7872318B2 (en) * | 2006-09-29 | 2011-01-18 | Hewlett-Packard Development Company, L.P. | Sensing devices and methods for forming the same |
EP2324487A4 (en) * | 2008-08-25 | 2014-07-02 | Trustees Boston College | METHOD FOR PRODUCING COMPLEX TWO-DIMENSIONAL CONDUCTIVE SILICIDES |
KR101086074B1 (ko) | 2009-02-18 | 2011-11-23 | 한국생산기술연구원 | 실리콘 나노 와이어 제조 방법, 실리콘 나노 와이어를 포함하는 태양전지 및 태양전지의 제조 방법 |
US20100206367A1 (en) | 2009-02-18 | 2010-08-19 | Korea Institute Of Industrial Technology | Method for fabricating silicon nano wire, solar cell including silicon nano wire and method for fabricating solar cell |
JP2010210579A (ja) | 2009-03-12 | 2010-09-24 | Toshiba Corp | 目標検出装置及び目標検出方法 |
US20110089402A1 (en) * | 2009-04-10 | 2011-04-21 | Pengfei Qi | Composite Nanorod-Based Structures for Generating Electricity |
US9061902B2 (en) | 2009-12-18 | 2015-06-23 | The Board Of Trustees Of The Leland Stanford Junior University | Crystalline-amorphous nanowires for battery electrodes |
-
2011
- 2011-09-29 US US13/248,675 patent/US8658246B2/en not_active Expired - Fee Related
- 2011-10-12 CN CN201110321142.4A patent/CN102456772B/zh not_active Expired - Fee Related
- 2011-10-13 JP JP2011226166A patent/JP5815180B2/ja active Active
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JP2012102005A (ja) | 2012-05-31 |
CN102456772A (zh) | 2012-05-16 |
US8658246B2 (en) | 2014-02-25 |
US20120094420A1 (en) | 2012-04-19 |
CN102456772B (zh) | 2016-02-24 |
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