JP5792958B2 - 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法 - Google Patents

放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法 Download PDF

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JP5792958B2
JP5792958B2 JP2011004650A JP2011004650A JP5792958B2 JP 5792958 B2 JP5792958 B2 JP 5792958B2 JP 2011004650 A JP2011004650 A JP 2011004650A JP 2011004650 A JP2011004650 A JP 2011004650A JP 5792958 B2 JP5792958 B2 JP 5792958B2
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heat
scintillator
base
adhesive member
peelable adhesive
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JP2011004650A
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Japanese (ja)
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JP2012145474A5 (enExample
JP2012145474A (ja
Inventor
覚 澤田
覚 澤田
井上　正人
正人 井上
竹田　慎市
慎市 竹田
石井　孝昌
孝昌 石井
大希 武井
大希 武井
正喜 秋山
正喜 秋山
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Canon Inc
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Canon Inc
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Priority to JP2011004650A priority Critical patent/JP5792958B2/ja
Priority to US13/324,037 priority patent/US8829456B2/en
Priority to CN201210005600.8A priority patent/CN102608647B/zh
Publication of JP2012145474A publication Critical patent/JP2012145474A/ja
Publication of JP2012145474A5 publication Critical patent/JP2012145474A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2002—Optical details, e.g. reflecting or diffusing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/496—Luminescent members, e.g. fluorescent sheets

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
JP2011004650A 2011-01-13 2011-01-13 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法 Expired - Fee Related JP5792958B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011004650A JP5792958B2 (ja) 2011-01-13 2011-01-13 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法
US13/324,037 US8829456B2 (en) 2011-01-13 2011-12-13 Radiation imaging apparatus, radiation imaging system, and method for manufacturing radiation imaging apparatus
CN201210005600.8A CN102608647B (zh) 2011-01-13 2012-01-10 辐射成像设备、辐射成像系统和制造辐射成像设备的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011004650A JP5792958B2 (ja) 2011-01-13 2011-01-13 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法

Related Child Applications (1)

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JP2015157611A Division JP6080920B2 (ja) 2015-08-07 2015-08-07 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法

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JP2012145474A JP2012145474A (ja) 2012-08-02
JP2012145474A5 JP2012145474A5 (enExample) 2014-02-27
JP5792958B2 true JP5792958B2 (ja) 2015-10-14

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Country Link
US (1) US8829456B2 (enExample)
JP (1) JP5792958B2 (enExample)
CN (1) CN102608647B (enExample)

Families Citing this family (13)

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Publication number Priority date Publication date Assignee Title
JP6245799B2 (ja) * 2012-11-29 2017-12-13 キヤノン株式会社 放射線撮像装置、及び放射線撮像システム
TWI492203B (zh) * 2012-12-04 2015-07-11 Au Optronics Corp 顯示面板之製造方法及疊層體
WO2014103889A1 (ja) * 2012-12-27 2014-07-03 京セラ株式会社 太陽電池モジュール
CN105283973B (zh) * 2013-09-27 2018-05-08 京瓷株式会社 热电模块
JP6270450B2 (ja) * 2013-12-13 2018-01-31 キヤノン株式会社 放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法
TW201535097A (zh) * 2014-03-14 2015-09-16 Corning Inc 嵌入玻璃的感測器及製造其之方法
JP2016070890A (ja) * 2014-10-01 2016-05-09 キヤノン株式会社 放射線撮影装置および放射線撮影システム
US9603574B2 (en) * 2014-12-17 2017-03-28 General Electric Company Reconfigurable electronic substrate
WO2016098224A1 (ja) * 2014-12-18 2016-06-23 株式会社Ihi 検査プローブ
KR20160088125A (ko) * 2015-01-15 2016-07-25 삼성전자주식회사 방사선 검출기 및 이를 포함하는 방사선 촬영장치
JP6524811B2 (ja) * 2015-06-16 2019-06-05 コニカミノルタ株式会社 放射線画像検出器
JP6659182B2 (ja) 2018-07-23 2020-03-04 キヤノン株式会社 放射線撮像装置、その製造方法及び放射線撮像システム
US20240001702A1 (en) * 2022-07-01 2024-01-04 Canon Kabushiki Kaisha Method for manufacturing recorded matter having stereoscopic image and manufacturing apparatus of recorded matter having stereoscopic image

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2898480B2 (ja) * 1992-09-14 1999-06-02 日東電工株式会社 加熱剥離性接着剤及び粘着部材
US5956382A (en) * 1997-09-25 1999-09-21 Eliezer Wiener-Avnear, Doing Business As Laser Electro Optic Application Technology Comp. X-ray imaging array detector and laser micro-milling method for fabricating array
US6800857B2 (en) 2000-08-10 2004-10-05 Canon Kabushiki Kaisha Large-area fiber plate, radiation image pickup apparatus utilizing the same and producing method therefor
US6794273B2 (en) * 2002-05-24 2004-09-21 Fujitsu Limited Semiconductor device and manufacturing method thereof
JP4289913B2 (ja) * 2003-03-12 2009-07-01 キヤノン株式会社 放射線検出装置及びその製造方法
JP2005136214A (ja) * 2003-10-30 2005-05-26 Nec Corp 薄膜デバイス基板の製造方法
EP1779140B1 (en) 2004-08-10 2018-06-20 Canon Kabushiki Kaisha Radiation detecting apparatus, scintillator panel, their manufacturing method and radiation detecting system
JP2006220439A (ja) * 2005-02-08 2006-08-24 Canon Inc シンチレータパネル、放射線検出装置及びその製造方法
JP2008144116A (ja) * 2006-12-13 2008-06-26 Nitto Denko Corp 両面粘着シートおよび液晶表示装置
FR2916575B1 (fr) 2007-05-23 2009-09-18 Trixell Sas Soc Par Actions Si Procede de realisation d'un detecteur de rayonnement
JP5441400B2 (ja) * 2008-12-19 2014-03-12 キヤノン株式会社 撮像装置、放射線撮像装置及びその製造方法
JPWO2010103917A1 (ja) 2009-03-13 2012-09-13 コニカミノルタエムジー株式会社 放射線検出装置
JP2011017683A (ja) 2009-07-10 2011-01-27 Fujifilm Corp 放射線画像検出器及びその製造方法

Also Published As

Publication number Publication date
CN102608647B (zh) 2015-09-23
US8829456B2 (en) 2014-09-09
US20120181434A1 (en) 2012-07-19
CN102608647A (zh) 2012-07-25
JP2012145474A (ja) 2012-08-02

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