CN102608647B - 辐射成像设备、辐射成像系统和制造辐射成像设备的方法 - Google Patents

辐射成像设备、辐射成像系统和制造辐射成像设备的方法 Download PDF

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Publication number
CN102608647B
CN102608647B CN201210005600.8A CN201210005600A CN102608647B CN 102608647 B CN102608647 B CN 102608647B CN 201210005600 A CN201210005600 A CN 201210005600A CN 102608647 B CN102608647 B CN 102608647B
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China
Prior art keywords
heat
scintillator
substrate
image
forming component
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Expired - Fee Related
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CN201210005600.8A
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English (en)
Chinese (zh)
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CN102608647A (zh
Inventor
泽田觉
井上正人
竹田慎市
石井孝昌
武井大希
秋山正喜
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2002—Optical details, e.g. reflecting or diffusing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/496—Luminescent members, e.g. fluorescent sheets

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
CN201210005600.8A 2011-01-13 2012-01-10 辐射成像设备、辐射成像系统和制造辐射成像设备的方法 Expired - Fee Related CN102608647B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011004650A JP5792958B2 (ja) 2011-01-13 2011-01-13 放射線撮像装置、放射線撮像システム及び放射線撮像装置の製造方法
JP2011-004650 2011-01-13

Publications (2)

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CN102608647A CN102608647A (zh) 2012-07-25
CN102608647B true CN102608647B (zh) 2015-09-23

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CN201210005600.8A Expired - Fee Related CN102608647B (zh) 2011-01-13 2012-01-10 辐射成像设备、辐射成像系统和制造辐射成像设备的方法

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US (1) US8829456B2 (enExample)
JP (1) JP5792958B2 (enExample)
CN (1) CN102608647B (enExample)

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JP6245799B2 (ja) * 2012-11-29 2017-12-13 キヤノン株式会社 放射線撮像装置、及び放射線撮像システム
TWI492203B (zh) * 2012-12-04 2015-07-11 Au Optronics Corp 顯示面板之製造方法及疊層體
WO2014103889A1 (ja) * 2012-12-27 2014-07-03 京セラ株式会社 太陽電池モジュール
US10062827B2 (en) * 2013-09-27 2018-08-28 Kyocera Corporation Thermoelectric module
JP6270450B2 (ja) * 2013-12-13 2018-01-31 キヤノン株式会社 放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法
TW201535097A (zh) * 2014-03-14 2015-09-16 Corning Inc 嵌入玻璃的感測器及製造其之方法
JP2016070890A (ja) * 2014-10-01 2016-05-09 キヤノン株式会社 放射線撮影装置および放射線撮影システム
US9603574B2 (en) * 2014-12-17 2017-03-28 General Electric Company Reconfigurable electronic substrate
KR102085411B1 (ko) * 2014-12-18 2020-03-05 가부시키가이샤 아이에이치아이 검사 프로브
KR20160088125A (ko) * 2015-01-15 2016-07-25 삼성전자주식회사 방사선 검출기 및 이를 포함하는 방사선 촬영장치
JP6524811B2 (ja) * 2015-06-16 2019-06-05 コニカミノルタ株式会社 放射線画像検出器
JP6659182B2 (ja) * 2018-07-23 2020-03-04 キヤノン株式会社 放射線撮像装置、その製造方法及び放射線撮像システム
US20240001702A1 (en) * 2022-07-01 2024-01-04 Canon Kabushiki Kaisha Method for manufacturing recorded matter having stereoscopic image and manufacturing apparatus of recorded matter having stereoscopic image

Citations (3)

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CN101002110A (zh) * 2004-08-10 2007-07-18 佳能株式会社 放射线探测装置、闪烁体板及其制造方法和放射线探测系统
CN101689556A (zh) * 2007-05-23 2010-03-31 特里赛尔公司 制造辐射探测器的方法
EP2273286A2 (en) * 2009-07-10 2011-01-12 Fujifilm Corporation Radiation image detection apparatus and manufacturing method of the same

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JP2898480B2 (ja) * 1992-09-14 1999-06-02 日東電工株式会社 加熱剥離性接着剤及び粘着部材
US5956382A (en) * 1997-09-25 1999-09-21 Eliezer Wiener-Avnear, Doing Business As Laser Electro Optic Application Technology Comp. X-ray imaging array detector and laser micro-milling method for fabricating array
US6800857B2 (en) 2000-08-10 2004-10-05 Canon Kabushiki Kaisha Large-area fiber plate, radiation image pickup apparatus utilizing the same and producing method therefor
US6794273B2 (en) * 2002-05-24 2004-09-21 Fujitsu Limited Semiconductor device and manufacturing method thereof
JP4289913B2 (ja) * 2003-03-12 2009-07-01 キヤノン株式会社 放射線検出装置及びその製造方法
JP2005136214A (ja) * 2003-10-30 2005-05-26 Nec Corp 薄膜デバイス基板の製造方法
JP2006220439A (ja) * 2005-02-08 2006-08-24 Canon Inc シンチレータパネル、放射線検出装置及びその製造方法
JP2008144116A (ja) * 2006-12-13 2008-06-26 Nitto Denko Corp 両面粘着シートおよび液晶表示装置
JP5441400B2 (ja) * 2008-12-19 2014-03-12 キヤノン株式会社 撮像装置、放射線撮像装置及びその製造方法
WO2010103917A1 (ja) 2009-03-13 2010-09-16 コニカミノルタエムジー株式会社 放射線検出装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101002110A (zh) * 2004-08-10 2007-07-18 佳能株式会社 放射线探测装置、闪烁体板及其制造方法和放射线探测系统
CN101689556A (zh) * 2007-05-23 2010-03-31 特里赛尔公司 制造辐射探测器的方法
EP2273286A2 (en) * 2009-07-10 2011-01-12 Fujifilm Corporation Radiation image detection apparatus and manufacturing method of the same

Also Published As

Publication number Publication date
US8829456B2 (en) 2014-09-09
CN102608647A (zh) 2012-07-25
JP2012145474A (ja) 2012-08-02
JP5792958B2 (ja) 2015-10-14
US20120181434A1 (en) 2012-07-19

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