JP5792513B2 - 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 - Google Patents

荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 Download PDF

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JP5792513B2
JP5792513B2 JP2011113005A JP2011113005A JP5792513B2 JP 5792513 B2 JP5792513 B2 JP 5792513B2 JP 2011113005 A JP2011113005 A JP 2011113005A JP 2011113005 A JP2011113005 A JP 2011113005A JP 5792513 B2 JP5792513 B2 JP 5792513B2
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data processing
processing area
area
frame
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Japanese (ja)
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JP2012243967A5 (enExample
JP2012243967A (ja
Inventor
純 八島
純 八島
彰人 安保
彰人 安保
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Nuflare Technology Inc
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Nuflare Technology Inc
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Priority to JP2011113005A priority Critical patent/JP5792513B2/ja
Priority to US13/465,221 priority patent/US9006691B2/en
Priority to KR1020120053093A priority patent/KR101444366B1/ko
Publication of JP2012243967A publication Critical patent/JP2012243967A/ja
Publication of JP2012243967A5 publication Critical patent/JP2012243967A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
JP2011113005A 2011-05-20 2011-05-20 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 Active JP5792513B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011113005A JP5792513B2 (ja) 2011-05-20 2011-05-20 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US13/465,221 US9006691B2 (en) 2011-05-20 2012-05-07 Charged particle beam writing apparatus and charged particle beam writing method using a generated frame that surrounds a first data processing block
KR1020120053093A KR101444366B1 (ko) 2011-05-20 2012-05-18 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011113005A JP5792513B2 (ja) 2011-05-20 2011-05-20 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Publications (3)

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JP2012243967A JP2012243967A (ja) 2012-12-10
JP2012243967A5 JP2012243967A5 (enExample) 2014-06-05
JP5792513B2 true JP5792513B2 (ja) 2015-10-14

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JP2011113005A Active JP5792513B2 (ja) 2011-05-20 2011-05-20 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

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US (1) US9006691B2 (enExample)
JP (1) JP5792513B2 (enExample)
KR (1) KR101444366B1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5693981B2 (ja) * 2011-01-20 2015-04-01 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5985852B2 (ja) 2012-03-27 2016-09-06 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6147528B2 (ja) * 2012-06-01 2017-06-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP6567843B2 (ja) * 2014-07-02 2019-08-28 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP7210991B2 (ja) * 2018-10-11 2023-01-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7701216B2 (ja) * 2021-08-27 2025-07-01 株式会社Ｓｃｒｅｅｎホールディングス 描画システム、描画方法およびプログラム

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IL97021A0 (en) * 1991-01-24 1992-03-29 Ibm Israel Partitioning method for e-beam lithography
JPH06333796A (ja) * 1993-05-20 1994-12-02 Fujitsu Ltd 露光データ処理方法及び装置
US5870312A (en) * 1996-06-28 1999-02-09 Lsi Logic Corporation Advanced modular cell placement system with dispersion-driven levelizing system
US5847959A (en) * 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation
JPH10256124A (ja) * 1997-03-12 1998-09-25 Sony Corp 描画パターンデータ作成方法、電子ビーム描画方法、基体加工方法、並びに電子線描画装置
JP3340387B2 (ja) * 1998-05-29 2002-11-05 株式会社日立製作所 電子線描画装置
US6415432B1 (en) * 1999-04-21 2002-07-02 Matsushita Electric Industrial Co., Ltd. Lithography pattern data generation method, lithography pattern fabrication method and charged particle lithography system
KR100297732B1 (ko) * 1999-06-21 2001-11-01 윤종용 반도체 소자의 소정 물질층의 패턴밀도를 구하는 방법 및 이를 이용한 화학기계적 연마의 시뮬레이션 방법
JP3394237B2 (ja) * 2000-08-10 2003-04-07 株式会社日立製作所 荷電粒子ビーム露光方法及び装置
JP2004023053A (ja) * 2002-06-20 2004-01-22 Sony Corp 電子ビーム露光方法
US7174526B2 (en) * 2004-07-30 2007-02-06 Lsi Logic Corporation Accurate density calculation with density views in layout databases
JP4989158B2 (ja) * 2005-09-07 2012-08-01 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法及び荷電粒子線描画データの変換方法
JP2007281184A (ja) * 2006-04-06 2007-10-25 Toshiba Corp 電子ビーム描画データ生成方法および電子ビーム描画データ生成装置
JP4932433B2 (ja) * 2006-11-02 2012-05-16 株式会社ニューフレアテクノロジー 電子ビーム描画装置及び電子ビーム描画方法
US7902528B2 (en) * 2006-11-21 2011-03-08 Cadence Design Systems, Inc. Method and system for proximity effect and dose correction for a particle beam writing device
US7824828B2 (en) * 2007-02-22 2010-11-02 Cadence Design Systems, Inc. Method and system for improvement of dose correction for particle beam writers
JP4751353B2 (ja) * 2007-03-06 2011-08-17 株式会社ニューフレアテクノロジー データ検証方法及び荷電粒子ビーム描画装置
JP4945380B2 (ja) * 2007-09-05 2012-06-06 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5314937B2 (ja) * 2008-06-06 2013-10-16 株式会社ニューフレアテクノロジー 描画装置及び描画用データの処理方法
JP5204687B2 (ja) * 2009-02-18 2013-06-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置
JP5408652B2 (ja) 2009-05-15 2014-02-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および装置
JP5530688B2 (ja) * 2009-09-18 2014-06-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその近接効果補正方法
JP5636238B2 (ja) * 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

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Publication number Publication date
JP2012243967A (ja) 2012-12-10
US20120292536A1 (en) 2012-11-22
US9006691B2 (en) 2015-04-14
KR101444366B1 (ko) 2014-09-24
KR20120130137A (ko) 2012-11-29

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