JP5788794B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP5788794B2 JP5788794B2 JP2011521898A JP2011521898A JP5788794B2 JP 5788794 B2 JP5788794 B2 JP 5788794B2 JP 2011521898 A JP2011521898 A JP 2011521898A JP 2011521898 A JP2011521898 A JP 2011521898A JP 5788794 B2 JP5788794 B2 JP 5788794B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000007646 gravure printing Methods 0.000 claims description 21
- 238000007639 printing Methods 0.000 claims description 16
- 238000007645 offset printing Methods 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 69
- 239000000463 material Substances 0.000 description 14
- 239000011247 coating layer Substances 0.000 description 9
- 230000003014 reinforcing effect Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229920001971 elastomer Polymers 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000005060 rubber Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 4
- 239000002345 surface coating layer Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- 239000004918 carbon fiber reinforced polymer Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920013716 polyethylene resin Polymers 0.000 description 2
- 229920006327 polystyrene foam Polymers 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
Description
アルミニウム製の裏面電極24を設け、n型半導体層20(n型シリコン)、p型半導体層22(p型シリコン)とから構成される多結晶シリコンの半導体層12を用意した。
Claims (1)
- 半導体層と、前記半導体層表面に導電性インキを用いて線幅1〜10μm及び高さ1〜10μmで印刷されてなる網状細線電極と、前記半導体層表面に導電性インキを用いて線幅50〜100μm及び高さ15〜100μmで印刷されてなる線状のバスバー電極と、前記半導体層裏面に設けられた裏面電極と、を含む太陽電池を製造するための方法であって、クッション層付グラビア製版ロールを用いた印刷法又はグラビアオフセット印刷法により、前記網状細線電極及び前記線状のバスバー電極を一度に印刷するようにしたことを特徴とする太陽電池の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011521898A JP5788794B2 (ja) | 2009-07-09 | 2010-07-01 | 太陽電池の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009163127 | 2009-07-09 | ||
JP2009163127 | 2009-07-09 | ||
PCT/JP2010/061238 WO2011004758A1 (ja) | 2009-07-09 | 2010-07-01 | 太陽電池の製造方法及び太陽電池 |
JP2011521898A JP5788794B2 (ja) | 2009-07-09 | 2010-07-01 | 太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011004758A1 JPWO2011004758A1 (ja) | 2012-12-20 |
JP5788794B2 true JP5788794B2 (ja) | 2015-10-07 |
Family
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JP2011521898A Active JP5788794B2 (ja) | 2009-07-09 | 2010-07-01 | 太陽電池の製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5788794B2 (ja) |
WO (1) | WO2011004758A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110858520A (zh) * | 2018-08-24 | 2020-03-03 | 罗杰斯有限公司 | 电能存储设备和用于制造电能存储设备的方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5405676B2 (ja) * | 2011-02-14 | 2014-02-05 | 順 阪本 | 印刷機、印刷装置および印刷方法 |
WO2013140549A1 (ja) * | 2012-03-21 | 2013-09-26 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
GB2509097A (en) * | 2012-12-19 | 2014-06-25 | Rec Cells Pte Ltd | Photovoltaic cell element having a specific electrode configuration |
CN104091841A (zh) * | 2013-04-02 | 2014-10-08 | 浙江鸿禧光伏科技股份有限公司 | 一种太阳能电池的栅线结构 |
KR102018649B1 (ko) * | 2013-06-21 | 2019-09-05 | 엘지전자 주식회사 | 태양 전지 |
CN111653633A (zh) * | 2020-06-03 | 2020-09-11 | 东方日升新能源股份有限公司 | 具有装饰性的太阳能电池及制备方法、电池组件 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03108307A (ja) * | 1989-09-21 | 1991-05-08 | Murata Mfg Co Ltd | セラミック電子部品の製造方法 |
JPH07169635A (ja) * | 1993-09-21 | 1995-07-04 | Matsushita Electric Ind Co Ltd | 電子部品およびその製造方法 |
JP2000243990A (ja) * | 1999-02-18 | 2000-09-08 | Dainippon Printing Co Ltd | 太陽電池用カバーフィルムおよびその製造方法、およびそのカバーフィルムを用いた太陽電池モジュール |
JP2000340812A (ja) * | 1999-05-28 | 2000-12-08 | Kyocera Corp | 太陽電池 |
JP2001068699A (ja) * | 1999-08-30 | 2001-03-16 | Kyocera Corp | 太陽電池 |
JP2007044974A (ja) * | 2005-08-09 | 2007-02-22 | Sumitomo Rubber Ind Ltd | 電極線の形成方法および該電極線を備えた電極板 |
JP2007118593A (ja) * | 2005-09-30 | 2007-05-17 | Think Laboratory Co Ltd | クッション層付グラビア製版ロール及びその製造方法 |
JP2009093171A (ja) * | 2007-09-20 | 2009-04-30 | Think Laboratory Co Ltd | クッション性を有するグラビア版の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62156881A (ja) * | 1985-12-28 | 1987-07-11 | Sharp Corp | 太陽電池素子 |
JP4441102B2 (ja) * | 1999-11-22 | 2010-03-31 | キヤノン株式会社 | 光起電力素子及びその製造方法 |
-
2010
- 2010-07-01 WO PCT/JP2010/061238 patent/WO2011004758A1/ja active Application Filing
- 2010-07-01 JP JP2011521898A patent/JP5788794B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03108307A (ja) * | 1989-09-21 | 1991-05-08 | Murata Mfg Co Ltd | セラミック電子部品の製造方法 |
JPH07169635A (ja) * | 1993-09-21 | 1995-07-04 | Matsushita Electric Ind Co Ltd | 電子部品およびその製造方法 |
JP2000243990A (ja) * | 1999-02-18 | 2000-09-08 | Dainippon Printing Co Ltd | 太陽電池用カバーフィルムおよびその製造方法、およびそのカバーフィルムを用いた太陽電池モジュール |
JP2000340812A (ja) * | 1999-05-28 | 2000-12-08 | Kyocera Corp | 太陽電池 |
JP2001068699A (ja) * | 1999-08-30 | 2001-03-16 | Kyocera Corp | 太陽電池 |
JP2007044974A (ja) * | 2005-08-09 | 2007-02-22 | Sumitomo Rubber Ind Ltd | 電極線の形成方法および該電極線を備えた電極板 |
JP2007118593A (ja) * | 2005-09-30 | 2007-05-17 | Think Laboratory Co Ltd | クッション層付グラビア製版ロール及びその製造方法 |
JP2009093171A (ja) * | 2007-09-20 | 2009-04-30 | Think Laboratory Co Ltd | クッション性を有するグラビア版の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110858520A (zh) * | 2018-08-24 | 2020-03-03 | 罗杰斯有限公司 | 电能存储设备和用于制造电能存储设备的方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2011004758A1 (ja) | 2012-12-20 |
WO2011004758A1 (ja) | 2011-01-13 |
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