JP5774916B2 - 半導体装置の作製方法及び半導体装置の検査方法 - Google Patents

半導体装置の作製方法及び半導体装置の検査方法 Download PDF

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Publication number
JP5774916B2
JP5774916B2 JP2011137590A JP2011137590A JP5774916B2 JP 5774916 B2 JP5774916 B2 JP 5774916B2 JP 2011137590 A JP2011137590 A JP 2011137590A JP 2011137590 A JP2011137590 A JP 2011137590A JP 5774916 B2 JP5774916 B2 JP 5774916B2
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transistor
oxide semiconductor
test
semiconductor device
gate
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JP2012028758A5 (enExample
JP2012028758A (ja
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宏充 郷戸
宏充 郷戸
修平 吉富
修平 吉富
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2625—Circuits therefor for testing field effect transistors, i.e. FET's for measuring gain factor thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2011137590A 2010-06-25 2011-06-21 半導体装置の作製方法及び半導体装置の検査方法 Expired - Fee Related JP5774916B2 (ja)

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JP2010145410 2010-06-25
JP2010145410 2010-06-25
JP2011137590A JP5774916B2 (ja) 2010-06-25 2011-06-21 半導体装置の作製方法及び半導体装置の検査方法

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JP2012028758A JP2012028758A (ja) 2012-02-09
JP2012028758A5 JP2012028758A5 (enExample) 2014-07-17
JP5774916B2 true JP5774916B2 (ja) 2015-09-09

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KR (1) KR101746197B1 (enExample)

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WO2015052858A1 (ja) * 2013-10-10 2015-04-16 パナソニック株式会社 薄膜トランジスタ及びその製造方法
JP6452485B2 (ja) * 2014-02-28 2019-01-16 株式会社神戸製鋼所 酸化物半導体薄膜の評価方法
CN104155588B (zh) * 2014-07-30 2017-05-24 合肥鑫晟光电科技有限公司 一种薄膜晶体管的测试装置及测试方法
CN104267329B (zh) * 2014-10-21 2017-03-15 京东方科技集团股份有限公司 晶体管测试电路以及测试方法
CN104764959A (zh) * 2015-04-15 2015-07-08 京东方科技集团股份有限公司 点灯治具
US10460600B2 (en) 2016-01-11 2019-10-29 NetraDyne, Inc. Driver behavior monitoring
WO2017123665A1 (en) 2016-01-11 2017-07-20 Netradyne Inc. Driver behavior monitoring
JP6906978B2 (ja) 2016-02-25 2021-07-21 株式会社半導体エネルギー研究所 半導体装置、半導体ウェハ、および電子機器
EP3491358A4 (en) 2016-07-31 2019-07-31 Netradyne, Inc. DETERMINING THE CAUSES OF TRANSPORT EVENTS AND PROMOTING GOOD DRIVING BEHAVIOR
JP6781120B2 (ja) * 2017-08-18 2020-11-04 株式会社日本マイクロニクス 検査装置
JP7108386B2 (ja) * 2017-08-24 2022-07-28 住友化学株式会社 電荷トラップ評価方法
WO2019068042A1 (en) 2017-09-29 2019-04-04 Netradyne Inc. MULTIPLE EXPOSURE EVENT DETERMINATION
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CN108196178B (zh) * 2017-12-28 2020-02-14 电子科技大学 一种表面陷阱能级分布的测量装置及光电导分析方法

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