JP5774916B2 - 半導体装置の作製方法及び半導体装置の検査方法 - Google Patents

半導体装置の作製方法及び半導体装置の検査方法 Download PDF

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JP5774916B2
JP5774916B2 JP2011137590A JP2011137590A JP5774916B2 JP 5774916 B2 JP5774916 B2 JP 5774916B2 JP 2011137590 A JP2011137590 A JP 2011137590A JP 2011137590 A JP2011137590 A JP 2011137590A JP 5774916 B2 JP5774916 B2 JP 5774916B2
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transistor
oxide semiconductor
test
semiconductor device
gate
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JP2012028758A (ja
JP2012028758A5 (enExample
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宏充 郷戸
宏充 郷戸
修平 吉富
修平 吉富
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2625—Circuits therefor for testing field effect transistors, i.e. FET's for measuring gain factor thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2011137590A 2010-06-25 2011-06-21 半導体装置の作製方法及び半導体装置の検査方法 Expired - Fee Related JP5774916B2 (ja)

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JP2011137590A JP5774916B2 (ja) 2010-06-25 2011-06-21 半導体装置の作製方法及び半導体装置の検査方法

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JP2010145410 2010-06-25
JP2010145410 2010-06-25
JP2011137590A JP5774916B2 (ja) 2010-06-25 2011-06-21 半導体装置の作製方法及び半導体装置の検査方法

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JP2012028758A JP2012028758A (ja) 2012-02-09
JP2012028758A5 JP2012028758A5 (enExample) 2014-07-17
JP5774916B2 true JP5774916B2 (ja) 2015-09-09

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US (2) US8912016B2 (enExample)
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KR (1) KR101746197B1 (enExample)

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CN104764959A (zh) * 2015-04-15 2015-07-08 京东方科技集团股份有限公司 点灯治具
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JP6781120B2 (ja) * 2017-08-18 2020-11-04 株式会社日本マイクロニクス 検査装置
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CN108196178B (zh) * 2017-12-28 2020-02-14 电子科技大学 一种表面陷阱能级分布的测量装置及光电导分析方法
CN117347808B (zh) * 2023-08-28 2026-06-19 西安电子科技大学 氧化镓肖特基势垒二极管电应力后陷阱演化的测试方法
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