JP5761627B2 - 誘電体セラミック及び積層セラミックコンデンサ - Google Patents
誘電体セラミック及び積層セラミックコンデンサ Download PDFInfo
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- JP5761627B2 JP5761627B2 JP2013504756A JP2013504756A JP5761627B2 JP 5761627 B2 JP5761627 B2 JP 5761627B2 JP 2013504756 A JP2013504756 A JP 2013504756A JP 2013504756 A JP2013504756 A JP 2013504756A JP 5761627 B2 JP5761627 B2 JP 5761627B2
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- 229910052727 yttrium Inorganic materials 0.000 claims description 11
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- 229910052689 Holmium Inorganic materials 0.000 claims description 6
- 229910052691 Erbium Inorganic materials 0.000 claims description 5
- 229910052771 Terbium Inorganic materials 0.000 claims description 5
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Description
(試料番号1〜6)
セラミック素原料として、高純度のBaCO3、CaCO3、TiO2を用意し、Caの置換モル量x及び配合モル比mが、表1となるように、これらセラミック素原料を秤量した。そしてこれら秤量物をPSZボール及び純水と共にボールミルに投入し、十分に湿式で混合粉砕し、乾燥させた後、1050℃の温度で約2時間、仮焼し、これにより平均粒径0.20μmの主成分粉末を作製した(主相粒子の合成)。
セラミック素原料として、BaCO3及びTiO2を使用し、試料番号1〜6と同様の方法・手順で主成分粉末を作製した。
セラミック素原料として、BaCO3及びTiO2を使用し、試料番号1〜6と同様の方法・手順で主成分粉末を作製した。
試料番号1〜9の各試料について、主相粒子及び異相粒子を同定し、高温負荷寿命を算出した。
試料番号1〜9の各試料について、イオンミリング法を使用し、厚みが40nm以下となるように薄片化し、観察断面を得た。
試料番号1〜9の各試料について、温度185℃で24V(20kV/mm)の直流電圧を印加し、絶縁抵抗が105Ω以下に低下した試料を不良と判断し、ワイブル・プロットにより高温負荷寿命を算出した。
2a〜2f 内部電極層
6a〜6g 誘電体セラミック層(誘電体層)
Claims (8)
- Ba、Ca及びTiを含むペロブスカイト型化合物を有する主相粒子を主成分とし、Ca、希土類元素、及びSiを含有した第1の異相粒子を少なくとも含み、
Caを含有せず希土類元素及びSiを含有した第2の異相粒子が、前記第1の異相粒子及び前記第2の異相粒子の各個数の総計に対する前記第2の異相粒子の個数の比率に換算し、0.05以下(0を含む。)であることを特徴とする誘電体セラミック。 - 前記主相粒子に含まれるCaは、該主相粒子の少なくとも中央部分に存在していることを特徴とする請求項1記載の誘電体セラミック。
- 前記希土類元素は、Y、Gd、Tb、Dy、Ho、Er、Tm、及びYbの中から選択された少なくとも1種以上を含むことを特徴とする請求項1又は請求項2記載の誘電体セラミック。
- 前記第1の異相粒子は、Ca、希土類元素及びSiの含有量総計に対する前記Caの含有量が、モル比換算で8%以上であることを特徴とする請求項1乃至請求項3のいずれかに記載の誘電体セラミック。
- 前記主相粒子に含まれるCaの含有量は、前記主相粒子に含まれるTi100モル部に対し3〜16モル部であることを特徴とする請求項1乃至請求項4のいずれかに記載の誘電体セラミック。
- 前記希土類元素の含有量は、Ti100モル部に対し1.0モル部以上であることを特徴とする請求項1乃至請求項5のいずれかに記載の誘電体セラミック。
- 前記Siの含有量は、Ti100モル部に対し0.5〜2.5モル部であることを特徴とする請求項1乃至請求項6のいずれかに記載の誘電体セラミック。
- 誘電体層と内部電極とが交互に積層された積層セラミックコンデンサにおいて、
前記誘電体層が、請求項1乃至請求項7のいずれかに記載の誘電体セラミックで形成されていることを特徴とする積層セラミックコンデンサ。
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