JP5758263B2 - 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法 - Google Patents

微細レジストパターン形成用組成物およびそれを用いたパターン形成方法 Download PDF

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Publication number
JP5758263B2
JP5758263B2 JP2011224030A JP2011224030A JP5758263B2 JP 5758263 B2 JP5758263 B2 JP 5758263B2 JP 2011224030 A JP2011224030 A JP 2011224030A JP 2011224030 A JP2011224030 A JP 2011224030A JP 5758263 B2 JP5758263 B2 JP 5758263B2
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Japan
Prior art keywords
pattern
composition
forming
polymer
resist pattern
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English (en)
Japanese (ja)
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JP2013083818A (ja
Inventor
安 哲 雄 岡
安 哲 雄 岡
藤 高 志 關
藤 高 志 關
井 雅 弘 石
井 雅 弘 石
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Merck Patent GmbH
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Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Priority to JP2011224030A priority Critical patent/JP5758263B2/ja
Priority to TW101137188A priority patent/TWI617880B/zh
Priority to US14/344,943 priority patent/US9448485B2/en
Priority to CN201280049610.XA priority patent/CN103858058B/zh
Priority to SG11201400460WA priority patent/SG11201400460WA/en
Priority to KR1020147012384A priority patent/KR101681524B1/ko
Priority to PCT/JP2012/076167 priority patent/WO2013054803A1/ja
Publication of JP2013083818A publication Critical patent/JP2013083818A/ja
Application granted granted Critical
Publication of JP5758263B2 publication Critical patent/JP5758263B2/ja
Priority to US15/216,288 priority patent/US20160327867A1/en
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/52—Amides or imides
    • C08F220/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
    • C08F220/56—Acrylamide; Methacrylamide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a single or double bond to nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2011224030A 2011-10-11 2011-10-11 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法 Active JP5758263B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2011224030A JP5758263B2 (ja) 2011-10-11 2011-10-11 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
TW101137188A TWI617880B (zh) 2011-10-11 2012-10-09 微細光阻圖案形成用組成物及使用其之圖案形成方法
CN201280049610.XA CN103858058B (zh) 2011-10-11 2012-10-10 细微抗蚀图案形成用组合物以及使用其的图案形成方法
SG11201400460WA SG11201400460WA (en) 2011-10-11 2012-10-10 Composition for forming fine resist pattern and pattern forming method using same
US14/344,943 US9448485B2 (en) 2011-10-11 2012-10-10 Composition for forming fine resist pattern and pattern forming method using same
KR1020147012384A KR101681524B1 (ko) 2011-10-11 2012-10-10 미세 레지스트 패턴 형성용 조성물 및 이를 사용한 패턴 형성 방법
PCT/JP2012/076167 WO2013054803A1 (ja) 2011-10-11 2012-10-10 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
US15/216,288 US20160327867A1 (en) 2011-10-11 2016-07-21 Composition for forming fine resist pattern and pattern forming method using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011224030A JP5758263B2 (ja) 2011-10-11 2011-10-11 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法

Publications (2)

Publication Number Publication Date
JP2013083818A JP2013083818A (ja) 2013-05-09
JP5758263B2 true JP5758263B2 (ja) 2015-08-05

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JP2011224030A Active JP5758263B2 (ja) 2011-10-11 2011-10-11 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法

Country Status (7)

Country Link
US (2) US9448485B2 (zh)
JP (1) JP5758263B2 (zh)
KR (1) KR101681524B1 (zh)
CN (1) CN103858058B (zh)
SG (1) SG11201400460WA (zh)
TW (1) TWI617880B (zh)
WO (1) WO2013054803A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6134619B2 (ja) * 2013-09-13 2017-05-24 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP6340304B2 (ja) * 2013-11-29 2018-06-06 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6286227B2 (ja) * 2014-02-21 2018-02-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
JP6531397B2 (ja) * 2014-03-07 2019-06-19 Jsr株式会社 パターン形成方法及びこれに用いられる組成物
US9529265B2 (en) 2014-05-05 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of preparing and using photosensitive material
JP6459759B2 (ja) * 2014-05-26 2019-01-30 信越化学工業株式会社 パターン形成方法及びシュリンク剤
US9448483B2 (en) * 2014-07-31 2016-09-20 Dow Global Technologies Llc Pattern shrink methods
KR101994793B1 (ko) * 2014-09-02 2019-07-01 후지필름 가부시키가이샤 패턴 형성 방법, 전자 디바이스의 제조 방법, 레지스트 조성물, 및 레지스트막
KR102480056B1 (ko) 2014-10-17 2022-12-21 도오꾜오까고오교 가부시끼가이샤 레지스트 패턴 형성 방법
JP6503206B2 (ja) 2015-03-19 2019-04-17 東京応化工業株式会社 レジストパターン修復方法
CN107430355B (zh) * 2015-03-31 2023-07-14 日产化学工业株式会社 抗蚀剂图案被覆用涂布液及图案的形成方法
US9909050B2 (en) 2015-10-14 2018-03-06 Cnpc Usa Corporation High density and high temperature emulsifier for use in an oil based drilling fluid system
US10280357B2 (en) 2015-10-14 2019-05-07 CNPC USA Corp. High density and high temperature emulsifier for use in an oil based drilling fluid system
US9963630B2 (en) 2015-11-18 2018-05-08 Cnpc Usa Corporation Method for a fracturing fluid system at high temperatures
JP2018537703A (ja) * 2015-11-19 2018-12-20 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP2017165846A (ja) * 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細パターン形成用組成物およびそれを用いた微細パターン形成方法
KR101730838B1 (ko) * 2016-05-04 2017-04-28 영창케미칼 주식회사 네가톤 포토레지스트를 이용한 패터닝 공정에서 lwr 개선 방법과 조성물
KR101819992B1 (ko) * 2016-06-24 2018-01-18 영창케미칼 주식회사 포토레지스트 패턴 축소 조성물과 패턴 축소 방법

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5729046A (en) * 1980-07-29 1982-02-16 Mitsubishi Paper Mills Ltd Processing method for lithographic plate
EP0128775B1 (en) * 1983-06-14 1989-11-15 Toray Industries, Inc. Resinous composition
DE3903001A1 (de) * 1989-02-02 1990-08-16 Hoechst Ag Lichtempfindliches gemisch und damit hergestelltes lichtempfindliches aufzeichnungsmaterial
US5398092A (en) * 1992-07-08 1995-03-14 Mitsubishi Paper Mills Limited Method and apparatus for developing lithographic offset printing plate
DE19533217A1 (de) * 1995-09-08 1997-03-13 Basf Ag Verfahren zur Herstellung von Polymerisaten auf Basis basischer Vinylmonomere
JP3071401B2 (ja) 1996-07-05 2000-07-31 三菱電機株式会社 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置
DE19732902A1 (de) * 1997-07-30 1999-02-04 Sun Chemical Corp Deckschicht für lichtempfindliche Materialien umfassend ein (1-Vinylimidazol)-Polymer oder -Copolymer
US6899994B2 (en) * 2001-04-04 2005-05-31 Kodak Polychrome Graphics Llc On-press developable IR sensitive printing plates using binder resins having polyethylene oxide segments
JP3662870B2 (ja) 2001-07-05 2005-06-22 東京応化工業株式会社 レジストパターン微細化用被覆形成剤及びそれを用いた微細レジストパターン形成方法
JP3485182B1 (ja) * 2002-06-28 2004-01-13 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
US7282291B2 (en) * 2002-11-25 2007-10-16 California Institute Of Technology Water free proton conducting membranes based on poly-4-vinylpyridinebisulfate for fuel cells
US6916594B2 (en) * 2002-12-30 2005-07-12 Hynix Semiconductor Inc. Overcoating composition for photoresist and method for forming photoresist pattern using the same
WO2005008340A1 (ja) * 2003-07-17 2005-01-27 Az Electronic Materials (Japan) K.K. 微細パターン形成材料およびそれを用いた微細パターン形成方法
JP4485241B2 (ja) 2004-04-09 2010-06-16 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物およびそれを用いたパターン形成方法
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP4952012B2 (ja) * 2005-03-29 2012-06-13 Ｊｓｒ株式会社 微細パターン形成用樹脂組成物および微細パターン形成方法
JP5000260B2 (ja) * 2006-10-19 2012-08-15 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
WO2008140119A1 (ja) * 2007-05-15 2008-11-20 Fujifilm Corporation パターン形成方法
US7833683B2 (en) * 2007-08-14 2010-11-16 Xerox Corporation Photosensitive member having an overcoat
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US20100028803A1 (en) * 2008-08-01 2010-02-04 Fujifilm Corporation Surface treating agent for resist pattern formation, resist composition, method of treating surface of resist pattern therewith and method of forming resist pattern
JP5183449B2 (ja) 2008-12-15 2013-04-17 富士フイルム株式会社 ネガ型現像用レジスト組成物を用いたパターン形成方法
JP5664509B2 (ja) * 2011-09-16 2015-02-04 信越化学工業株式会社 パターン形成方法

Also Published As

Publication number Publication date
KR101681524B1 (ko) 2016-12-01
WO2013054803A1 (ja) 2013-04-18
US20160327867A1 (en) 2016-11-10
JP2013083818A (ja) 2013-05-09
SG11201400460WA (en) 2014-05-29
CN103858058B (zh) 2018-03-13
KR20140090189A (ko) 2014-07-16
CN103858058A (zh) 2014-06-11
TWI617880B (zh) 2018-03-11
US9448485B2 (en) 2016-09-20
TW201324037A (zh) 2013-06-16
US20150017587A1 (en) 2015-01-15

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