JPWO2015178387A1 - 上層膜形成用組成物およびそれを用いたレジストパターン形成方法 - Google Patents
上層膜形成用組成物およびそれを用いたレジストパターン形成方法 Download PDFInfo
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
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Abstract
Description
本発明による上層膜形成用組成物は、レジスト膜の上に形成される上層膜を形成するためのものであり、芳香族性水酸基を有し、分子量が180〜800である芳香族化合物および水性溶媒を含んでなる。
(1)露光の際に、レジスト膜に照射される光に含まれる深紫外光を吸収する作用、
(2)露光の際に、レジスト膜内に発生するガスが、雰囲気中に揮発することを抑制する作用、
(3)極紫外線に対する感度を、上層膜が形成されない場合と同等以上に上昇させる作用。
本発明において、芳香族化合物は、芳香族性水酸基を有しており、また、共役構造を有しているため、深紫外光に対して強い吸収を持つものである。
ここで芳香族性水酸基とは、芳香族化合物中の芳香環に直接結合する水酸基のことをいう。具体的には、フェノール骨格、ナフトール骨格、ヒドロキシアントラセン骨格、ヒドロキシアントラキノン骨格、ビスフェノール骨格およびヒドロキシベンゾピラン骨格などの構造に含まれる水酸基である。これらの骨格は芳香族性水酸基以外にも、直接結合する置換基を有していてもよく、例えば、カルボキシル基、スルホ基、アミノ基、アミド基、ニトロ基、カルボン酸エステル基およびポリアルキレンオキサイド基などが挙げられる。言い換えると本発明において用いられる芳香族化合物は、芳香族性水酸基を有する芳香族基を有するものである。
なお、上記した芳香族基は例として示したものであり、水酸基および結合手が結合する環上の位置は、上記例で示す位置に限定されるものではない。
また、上記式(1)における二つの芳香環の間に存在する連結基−CR’2−がカルボニル基−CO−であってもよい。前記炭化水素基および環状構造の置換基として親水性基または深紫外線吸収基などが挙げられる。
本発明においては、芳香族化合物の水に対する溶解度は25℃において、10g/100ml以上であることが好ましく、5g/100ml以上であることがより好ましい。なお、芳香族化合物の溶解性は一定以上であればよく、その上限は無い。
本発明による上層膜形成用組成物は水性溶媒を含んでなる。本発明による上層膜形成用組成物は、一般的にレジスト膜の上に直接塗布される。このため、上層膜形成用組成物がレジスト膜に影響を与え、パターン形状の悪化などを起こさないものであることが望ましい。このため、レジスト膜に影響の少ない水性溶媒が使用される。このような水性溶媒に用いられる水としては、蒸留、イオン交換処理、フィルター処理、各種吸着処理等により、有機不純物、金属イオン等が除去されたものが好ましい。
本発明において、上層膜形成用組成物は芳香族化合物と溶剤以外に、上層膜形成成分としてさらにポリマーを含むものであってよい。以下、このようなポリマーをバインダーポリマーまたは簡単にバインダーということがある。上層膜形成用組成物が、上層膜形成成分としてバインダーを含んでなる場合、塗布性・成膜性が改良され、より均一な上層膜を形成させることができる。このようにバインダーを用いて上層膜を形成させると比較的堅牢な上層膜が形成されるので、物理的な接触などによる上層膜の剥離が抑制されるので好ましい。
すなわち、モノマーが重合する様式は特に限定されず、縮合重合、開環重合、付加重合など、いずれの様式で重合したものであってもよい。
本発明による上層膜形成用組成物は、従来の上層膜形成用組成物や上面反射防止膜形成用組成物と同様に用いることができる。言い換えれば、本発明による上層膜形成用組成物を用いるにあたって、製造工程を大幅に変更する必要はない。具体的に本発明による上層膜形成用組成物を用いたパターン形成方法を説明すると以下の通りである。
このとき、形成される上層膜の厚さは、一般に1〜100nm、好ましくは5〜50nmである。
各種の置換基を有する芳香族化合物を表1に示す通りに組み合わせた。この芳香族化合物を純水、または水/イソプロパノール混合溶媒(イソプロパノール含有率30質量%)に、芳香族化合物の含有量が3質量%となるように溶解させて、上層膜形成用組成物を調製した。
レジスト組成物としては、SEVR−337(商品名、信越化学工業株式会社製)を用いた。レジスト組成物を塗布後、さらに各上層膜形成用組成物を膜厚30nmとなるようにスピンコートした。塗布後、95℃で60秒間加熱して上層膜により被覆されたレジスト膜を得た。得られたレジスト膜を、SPring−8のニュースバル蓄積リングを用いて像用露光し、2.38%水酸化テトラメチルアンモニウム水溶液で30秒間現像し、残留物を評価した。得られた結果は表1に示す通りであった。
上層膜形成用組成物を表2に示されたものに変更した以外は、実施例101と同様にしてレジスト膜を得た。得られたレジスト膜を、SPring−8のニュースバル蓄積リングを用いて像用露光し、2.38%水酸化テトラメチルアンモニウム水溶液で30秒間現像し、露光量E0(mJ/cm2)を測定した。得られた結果は表2に示す通りであった。
上層膜形成用組成物を表3に示されたものに変更した以外は、実施例101と同様にしてレジスト膜を得た。各レジスト膜に対して極紫外線による露光を行いながら、露光の前後で露光チャンバーの圧力変化△P(×10−7Pa)を測定した。得られた結果は表3に示す通りであった。
芳香族化合物として前記した化合物a、b、c、dおよびeを準備した。
P1: (ポリヒドロキシスチレン(質量平均分子量12,000))
P2: (ノボラック樹脂(質量平均分子量8,500))
P3: (ポリビニルアルコール(質量平均分子量22,000))
P4: (ポリアクリル酸(質量平均分子量11,000))
A: 塗布可能であり、膜厚の面内均一性も優れていた
B: 塗布可能であり、膜の面内均一性が若干劣ったが実用性は十分であった
C: 塗布可能であり、膜の面内均一性が劣ることが確認できたが実用可能であった
D: 塗布ができなかった
上層膜形成用組成物を、スピンコートにより厚さ30nmで成膜し、光透過性を評価した。具体的には分光エリプソメータ解析法により吸収係数を求め、波長193nmおよび248nmにおけるk値を算出した。得られた結果は表5に示す通りであった。
Claims (16)
- レジスト膜の上に形成される上層膜を形成するための上層膜形成用組成物であって、芳香族性水酸基を有する、分子量が180〜800である芳香族化合物および水性溶媒を含んでなることを特徴とする、上層膜形成用組成物。
- 前記芳香族化合物が、フェノール骨格、ナフトール骨格、ヒドロキシアントラセン骨格、ヒドロキシアントラキノン骨格、ビスフェノール骨格、およびヒドロキシベンゾピラン骨格からなる群から選択される構造を含んでなる、請求項1に記載の上層膜形成用組成物。
- 前記芳香族化合物が、非芳香族性親水性基を更に有する、請求項1または2に記載の上層膜形成用組成物。
- 前記非芳香族性親水性基が、水酸基、カルボキシル基、スルホ基、ニトロ基、シアノ基、アミノ基、アミド基、ニトロ基、カルボン酸エステル基およびポリアルキレンオキサイド基からなる群から選択される、請求項3に記載の上層膜形成用組成物。
- 前記芳香族化合物が、深紫外線吸収基を更に有する、請求項1〜4のいずれか1項に記載の上層膜形成用組成物。
- 前記深紫外線吸収基が芳香族基である、請求項5に記載の上層膜形成用組成物。
- 前記芳香族化合物の融点が、100℃以上である、請求項1〜6のいずれか1項に記載の上層膜形成用組成物。
- 前記芳香族化合物が、水素、炭素、窒素、酸素および硫黄以外の原子を含まない、請求項1〜7のいずれか1項に記載の上層膜形成用組成物。
- 前記芳香族化合物の含有量が、上層膜形成用組成物の総質量を基準として、0.01〜10質量%である、請求項1〜9のいずれか1項に記載の上層膜形成用組成物。
- バインダーポリマーをさらに含んでなる、請求項1〜10のいずれか1項に記載の上層膜形成用組成物。
- 前記バインダーポリマーが深紫外線吸収基を有する、請求項11に記載の上層膜形成用組成物。
- 基板上にレジスト組成物を塗布してレジスト組成物層を形成させ、前記レジスト組成物層上に、請求項1〜12のいずれか1項に記載の上層膜形成用組成物を塗布し、加熱してレジスト膜および上層膜を形成させ、前記レジスト膜を前記上層膜を介して極紫外線を用いて露光し、アルカリ水溶液で現像することを含んでなることを特徴とする、パターン形成方法。
- 前記極紫外線の波長が5〜20nmである、請求項13に記載のパターン形成方法。
- 前記上層膜の膜厚が1〜100nmである、請求項13または14に記載のパターン形成方法。
- 前記加熱の際の加熱温度が、25〜150℃である、請求項13〜15のいずれか1項に記載のパターン形成方法。
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