WO2008146626A1 - 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 - Google Patents

反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 Download PDF

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Publication number
WO2008146626A1
WO2008146626A1 PCT/JP2008/059046 JP2008059046W WO2008146626A1 WO 2008146626 A1 WO2008146626 A1 WO 2008146626A1 JP 2008059046 W JP2008059046 W JP 2008059046W WO 2008146626 A1 WO2008146626 A1 WO 2008146626A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
antireflection film
formation
film formation
resist pattern
Prior art date
Application number
PCT/JP2008/059046
Other languages
English (en)
French (fr)
Inventor
Atsushi Sawano
Jun Koshiyama
Takako Hirosaki
Original Assignee
Tokyo Ohka Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co., Ltd. filed Critical Tokyo Ohka Kogyo Co., Ltd.
Priority to KR1020097025265A priority Critical patent/KR101115119B1/ko
Priority to CN2008800155842A priority patent/CN101681112B/zh
Publication of WO2008146626A1 publication Critical patent/WO2008146626A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Spectroscopy & Molecular Physics (AREA)

Abstract

　所定のｐＨを有する反射防止膜形成用組成物であって、保存安定性、レジスト膜とのマッチング性、及び塗布性に優れ、十分な光学特性を有する反射防止膜を形成できる反射防止膜形成用組成物を提供すること。 　レジスト膜上に設けられる反射防止膜を形成するための反射防止膜形成用組成物であって、水溶性膜形成成分と、所定のフッ素化合物と、を含む反射防止膜形成用組成物。この反射防止膜形成用組成物は、所定のフッ素化合物を添加することにより、塗布性を低下させずにｐＨを容易に調整でき、保存安定性、及びレジスト膜とのマッチング性に優れた反射防止膜形成用組成物を提供することができる。更に、当該フッ素化合物は、反射防止膜の光学特性の向上にも寄与するため、優れた光学特性を有する反射防止膜を形成できる反射防止膜形成用組成物を提供することもできる。
PCT/JP2008/059046 2007-06-01 2008-05-16 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法 WO2008146626A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097025265A KR101115119B1 (ko) 2007-06-01 2008-05-16 반사 방지막 형성용 조성물, 및 이것을 이용한 레지스트 패턴 형성방법
CN2008800155842A CN101681112B (zh) 2007-06-01 2008-05-16 防反射膜形成用组合物、以及使用该组合物的光刻胶图案形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007147411A JP4928356B2 (ja) 2007-06-01 2007-06-01 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法
JP2007-147411 2007-06-01

Publications (1)

Publication Number Publication Date
WO2008146626A1 true WO2008146626A1 (ja) 2008-12-04

Family

ID=40074891

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059046 WO2008146626A1 (ja) 2007-06-01 2008-05-16 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法

Country Status (5)

Country Link
JP (1) JP4928356B2 (ja)
KR (1) KR101115119B1 (ja)
CN (1) CN101681112B (ja)
TW (1) TW200915006A (ja)
WO (1) WO2008146626A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015178387A1 (ja) * 2014-05-21 2015-11-26 アーゼット・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 上層膜形成用組成物およびそれを用いたレジストパターン形成方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017169569A1 (ja) * 2016-03-30 2017-10-05 富士フイルム株式会社 保護膜形成用組成物、保護膜形成用組成物の製造方法、パターン形成方法、および、電子デバイスの製造方法
TWI755723B (zh) * 2020-05-05 2022-02-21 力晶積成電子製造股份有限公司 圖案化方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007043556A1 (ja) * 2005-10-14 2007-04-19 Tokyo Ohka Kogyo Co., Ltd. ホトレジスト上層膜形成用材料
WO2007049637A1 (ja) * 2005-10-27 2007-05-03 Jsr Corporation 上層膜形成組成物およびフォトレジストパターン形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002012574A (ja) * 2000-06-29 2002-01-15 Nippon Shokubai Co Ltd 芳香族フッ素化合物の抽出方法
JP4196822B2 (ja) * 2003-12-22 2008-12-17 パナソニック株式会社 水溶性材料及びそれを用いたパターン形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007043556A1 (ja) * 2005-10-14 2007-04-19 Tokyo Ohka Kogyo Co., Ltd. ホトレジスト上層膜形成用材料
WO2007049637A1 (ja) * 2005-10-27 2007-05-03 Jsr Corporation 上層膜形成組成物およびフォトレジストパターン形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015178387A1 (ja) * 2014-05-21 2015-11-26 アーゼット・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 上層膜形成用組成物およびそれを用いたレジストパターン形成方法
JPWO2015178387A1 (ja) * 2014-05-21 2017-04-20 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 上層膜形成用組成物およびそれを用いたレジストパターン形成方法
US10268117B2 (en) 2014-05-21 2019-04-23 Az Electronic Materials (Luxembourg) S.A.R.L. Top-layer membrane formation composition and method for forming resist pattern using same

Also Published As

Publication number Publication date
TWI370954B (ja) 2012-08-21
JP4928356B2 (ja) 2012-05-09
KR101115119B1 (ko) 2012-03-13
TW200915006A (en) 2009-04-01
KR20100009580A (ko) 2010-01-27
CN101681112B (zh) 2012-05-30
CN101681112A (zh) 2010-03-24
JP2008299223A (ja) 2008-12-11

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