TWI370954B - - Google Patents

Info

Publication number
TWI370954B
TWI370954B TW097119773A TW97119773A TWI370954B TW I370954 B TWI370954 B TW I370954B TW 097119773 A TW097119773 A TW 097119773A TW 97119773 A TW97119773 A TW 97119773A TW I370954 B TWI370954 B TW I370954B
Authority
TW
Taiwan
Application number
TW097119773A
Other languages
Chinese (zh)
Other versions
TW200915006A (en
Inventor
Atsushi Sawano
Jun Koshiyama
Takako Hirosaki
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200915006A publication Critical patent/TW200915006A/zh
Application granted granted Critical
Publication of TWI370954B publication Critical patent/TWI370954B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Spectroscopy & Molecular Physics (AREA)
TW97119773A 2007-06-01 2008-05-28 Composition for antireflection film formation and method for resist pattern formation using the composition TW200915006A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007147411A JP4928356B2 (ja) 2007-06-01 2007-06-01 反射防止膜形成用組成物、及びこれを用いたレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200915006A TW200915006A (en) 2009-04-01
TWI370954B true TWI370954B (ja) 2012-08-21

Family

ID=40074891

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97119773A TW200915006A (en) 2007-06-01 2008-05-28 Composition for antireflection film formation and method for resist pattern formation using the composition

Country Status (5)

Country Link
JP (1) JP4928356B2 (ja)
KR (1) KR101115119B1 (ja)
CN (1) CN101681112B (ja)
TW (1) TW200915006A (ja)
WO (1) WO2008146626A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102061488B1 (ko) * 2014-05-21 2020-01-03 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. 상층막 형성용 조성물 및 이를 사용한 레지스트 패턴 형성 방법
WO2017169569A1 (ja) * 2016-03-30 2017-10-05 富士フイルム株式会社 保護膜形成用組成物、保護膜形成用組成物の製造方法、パターン形成方法、および、電子デバイスの製造方法
TWI755723B (zh) * 2020-05-05 2022-02-21 力晶積成電子製造股份有限公司 圖案化方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002012574A (ja) * 2000-06-29 2002-01-15 Nippon Shokubai Co Ltd 芳香族フッ素化合物の抽出方法
JP4196822B2 (ja) * 2003-12-22 2008-12-17 パナソニック株式会社 水溶性材料及びそれを用いたパターン形成方法
JP2007108463A (ja) * 2005-10-14 2007-04-26 Tokyo Ohka Kogyo Co Ltd ホトレジスト上層膜形成用材料
JP5050855B2 (ja) * 2005-10-27 2012-10-17 Ｊｓｒ株式会社 上層膜形成組成物およびフォトレジストパターン形成方法

Also Published As

Publication number Publication date
JP4928356B2 (ja) 2012-05-09
KR101115119B1 (ko) 2012-03-13
TW200915006A (en) 2009-04-01
KR20100009580A (ko) 2010-01-27
CN101681112B (zh) 2012-05-30
WO2008146626A1 (ja) 2008-12-04
CN101681112A (zh) 2010-03-24
JP2008299223A (ja) 2008-12-11

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