JP5744002B2 - Ｃｍｕｔアレイ - Google Patents

Ｃｍｕｔアレイ Download PDF

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Publication number
JP5744002B2
JP5744002B2 JP2012501381A JP2012501381A JP5744002B2 JP 5744002 B2 JP5744002 B2 JP 5744002B2 JP 2012501381 A JP2012501381 A JP 2012501381A JP 2012501381 A JP2012501381 A JP 2012501381A JP 5744002 B2 JP5744002 B2 JP 5744002B2
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JP
Japan
Prior art keywords
layer
wafer
cmut
silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012501381A
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English (en)
Japanese (ja)
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JP2012521704A5 (enExample
JP2012521704A (ja
Inventor
シリッド ベルグ，
シリッド ベルグ，
カマル チャパガイン，
カマル チャパガイン，
ジョン デュー−ハンセン，
ジョン デュー−ハンセン，
キェル アルネ インゲブリグトセン，
キェル アルネ インゲブリグトセン，
ガイール ウリ イェンセン，
ガイール ウリ イェンセン，
キェシュティ ミドトベ，
キェシュティ ミドトベ，
エリック ウトネ ポッペ，
エリック ウトネ ポッペ，
アルネ レネクライヴ，
アルネ レネクライヴ，
ダーグ トシュタイン ワング，
ダーグ トシュタイン ワング，
Original Assignee
ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）
ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0905255A external-priority patent/GB0905255D0/en
Priority claimed from GB0905256A external-priority patent/GB0905256D0/en
Priority claimed from GB0909296A external-priority patent/GB0909296D0/en
Application filed by ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）, ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー） filed Critical ノルウェージャン ユニバーシティ オブ サイエンス アンド テクノロジー（エヌティーエヌユー）
Publication of JP2012521704A publication Critical patent/JP2012521704A/ja
Publication of JP2012521704A5 publication Critical patent/JP2012521704A5/ja
Application granted granted Critical
Publication of JP5744002B2 publication Critical patent/JP5744002B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Bipolar Transistors (AREA)
  • Pressure Sensors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012501381A 2009-03-26 2010-03-26 Ｃｍｕｔアレイ Expired - Fee Related JP5744002B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GB0905256.4 2009-03-26
GB0905255.6 2009-03-26
GB0905255A GB0905255D0 (en) 2009-03-26 2009-03-26 Cmut array
GB0905256A GB0905256D0 (en) 2009-03-26 2009-03-26 Ultrasound transducer backing layer
GB0909296A GB0909296D0 (en) 2009-05-28 2009-05-28 Ultrasound transsducer damping layer
GB0909296.6 2009-05-28
PCT/GB2010/000583 WO2010109205A2 (en) 2009-03-26 2010-03-26 Cmut array

Publications (3)

Publication Number Publication Date
JP2012521704A JP2012521704A (ja) 2012-09-13
JP2012521704A5 JP2012521704A5 (enExample) 2013-05-16
JP5744002B2 true JP5744002B2 (ja) 2015-07-01

Family

ID=42308937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012501381A Expired - Fee Related JP5744002B2 (ja) 2009-03-26 2010-03-26 Ｃｍｕｔアレイ

Country Status (7)

Country Link
US (1) US20120074509A1 (enExample)
EP (4) EP2662153A1 (enExample)
JP (1) JP5744002B2 (enExample)
CN (1) CN102427890A (enExample)
DK (1) DK2411163T3 (enExample)
ES (1) ES2416182T3 (enExample)
WO (1) WO2010109205A2 (enExample)

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US9220415B2 (en) * 2011-10-25 2015-12-29 Andreas Mandelis Systems and methods for frequency-domain photoacoustic phased array imaging
WO2013089648A1 (en) * 2011-12-16 2013-06-20 Agency For Science, Technology And Research Capacitive micromachined ultrasonic transducer arrangement and method of fabricating the same
JP2013226389A (ja) * 2012-03-31 2013-11-07 Canon Inc 探触子及びその製造方法、及びそれを用いた被検体情報取得装置
CN104379268B (zh) * 2012-05-31 2017-02-22 皇家飞利浦有限公司 晶片及其制造方法
US9012324B2 (en) * 2012-08-24 2015-04-21 United Microelectronics Corp. Through silicon via process
KR101851569B1 (ko) 2012-11-28 2018-04-24 삼성전자주식회사 초음파 변환기 및 그 제조방법
WO2014168665A2 (en) * 2013-01-18 2014-10-16 Yale University Methods for making a superconducting device with at least one enclosure
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WO2014123922A1 (en) 2013-02-05 2014-08-14 Butterfly Network, Inc. Cmos ultrasonic transducers and related apparatus and methods
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EP2969914B1 (en) 2013-03-15 2020-01-01 Butterfly Network Inc. Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same
US9667889B2 (en) 2013-04-03 2017-05-30 Butterfly Network, Inc. Portable electronic devices with integrated imaging capabilities
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US10328463B2 (en) 2013-11-22 2019-06-25 Sunnybrook Health Sciences Centre Ultrasonic transducer with backing having spatially segmented surface
KR20150065067A (ko) * 2013-12-04 2015-06-12 삼성전자주식회사 정전용량 미세가공 초음파 변환기 및 그 제조방법
US9948254B2 (en) 2014-02-21 2018-04-17 Yale University Wireless Josephson bifurcation amplifier
TWI661534B (zh) 2014-04-18 2019-06-01 美商蝴蝶網路公司 在互補式金屬氧化物半導體晶圓中的超音波轉換器及相關設備和方法
TWI687710B (zh) 2014-04-18 2020-03-11 美商蝴蝶網路公司 單基板超音波成像裝置的架構、相關設備及方法
CN106456115B (zh) 2014-04-18 2020-03-20 蝴蝶网络有限公司 超声成像压缩方法及设备
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
WO2016106153A1 (en) 2014-12-21 2016-06-30 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication
KR102493109B1 (ko) 2015-02-27 2023-01-30 예일 유니버시티 조셉슨 접합-기반 서큘레이터 및 관련 시스템 및 방법
US10404214B2 (en) 2015-02-27 2019-09-03 Yale University Techniques for producing quantum amplifiers and related systems and methods
JP6894378B2 (ja) 2015-02-27 2021-06-30 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 平面キュービットを非平面共振器に連結するための技術ならびに関連する系および方法
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CN108698815B (zh) 2016-01-15 2022-04-08 耶鲁大学 用于操纵双量子位量子态的技术及相关系统和方法
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Also Published As

Publication number Publication date
EP2662153A1 (en) 2013-11-13
EP2669019A1 (en) 2013-12-04
EP2411163A2 (en) 2012-02-01
EP2411163B1 (en) 2013-05-15
EP2659987A1 (en) 2013-11-06
ES2416182T3 (es) 2013-07-30
WO2010109205A3 (en) 2011-03-03
WO2010109205A2 (en) 2010-09-30
US20120074509A1 (en) 2012-03-29
JP2012521704A (ja) 2012-09-13
DK2411163T3 (da) 2013-06-10
CN102427890A (zh) 2012-04-25

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