CN102427890A - 具有导电过孔的晶片键合的cmut阵列 - Google Patents

具有导电过孔的晶片键合的cmut阵列 Download PDF

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Publication number
CN102427890A
CN102427890A CN2010800225984A CN201080022598A CN102427890A CN 102427890 A CN102427890 A CN 102427890A CN 2010800225984 A CN2010800225984 A CN 2010800225984A CN 201080022598 A CN201080022598 A CN 201080022598A CN 102427890 A CN102427890 A CN 102427890A
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CN
China
Prior art keywords
layer
wafer
cmut
silicon
array
Prior art date
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Pending
Application number
CN2010800225984A
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English (en)
Chinese (zh)
Inventor
西格丽德·伯格
卡马尔·恰帕金
乔恩·杜-汉森
谢尔·阿恩·英厄布里格森
吉尔·尤里·延森
谢尔斯蒂·米德伯
埃里克·尤特讷·波普
阿恩·罗内克莱夫
戴格·索尔斯坦·望
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NTNU Technology Transfer AS
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NTNU Technology Transfer AS
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Publication date
Priority claimed from GB0905255A external-priority patent/GB0905255D0/en
Priority claimed from GB0905256A external-priority patent/GB0905256D0/en
Priority claimed from GB0909296A external-priority patent/GB0909296D0/en
Application filed by NTNU Technology Transfer AS filed Critical NTNU Technology Transfer AS
Publication of CN102427890A publication Critical patent/CN102427890A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Bipolar Transistors (AREA)
  • Pressure Sensors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2010800225984A 2009-03-26 2010-03-26 具有导电过孔的晶片键合的cmut阵列 Pending CN102427890A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GB0905255A GB0905255D0 (en) 2009-03-26 2009-03-26 Cmut array
GB0905256.4 2009-03-26
GB0905256A GB0905256D0 (en) 2009-03-26 2009-03-26 Ultrasound transducer backing layer
GB0905255.6 2009-03-26
GB0909296A GB0909296D0 (en) 2009-05-28 2009-05-28 Ultrasound transsducer damping layer
GB0909296.6 2009-05-28
PCT/GB2010/000583 WO2010109205A2 (en) 2009-03-26 2010-03-26 Cmut array

Publications (1)

Publication Number Publication Date
CN102427890A true CN102427890A (zh) 2012-04-25

Family

ID=42308937

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800225984A Pending CN102427890A (zh) 2009-03-26 2010-03-26 具有导电过孔的晶片键合的cmut阵列

Country Status (7)

Country Link
US (1) US20120074509A1 (enExample)
EP (4) EP2411163B1 (enExample)
JP (1) JP5744002B2 (enExample)
CN (1) CN102427890A (enExample)
DK (1) DK2411163T3 (enExample)
ES (1) ES2416182T3 (enExample)
WO (1) WO2010109205A2 (enExample)

Cited By (2)

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CN104701452A (zh) * 2013-12-04 2015-06-10 三星电子株式会社 电容式微加工超声换能器及其制造方法
CN106998522A (zh) * 2016-01-25 2017-08-01 中国科学院苏州纳米技术与纳米仿生研究所 微电容超声传感器

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FI124354B (fi) * 2011-04-04 2014-07-15 Okmetic Oyj Menetelmä yhden tai useamman polykiteisen piikerroksen pinnoittamiseksi substraatille
AU2012326218B2 (en) 2011-10-17 2017-03-09 Butterfly Network, Inc. Transmissive imaging and related apparatus and methods
US9220415B2 (en) * 2011-10-25 2015-12-29 Andreas Mandelis Systems and methods for frequency-domain photoacoustic phased array imaging
WO2013089648A1 (en) * 2011-12-16 2013-06-20 Agency For Science, Technology And Research Capacitive micromachined ultrasonic transducer arrangement and method of fabricating the same
JP2013226389A (ja) * 2012-03-31 2013-11-07 Canon Inc 探触子及びその製造方法、及びそれを用いた被検体情報取得装置
BR112014029547A2 (pt) * 2012-05-31 2017-06-27 Koninklijke Philips Nv placa sendo subdividida e separavel em uma pluralidade de matrizes, método de fabricação de uma placa e método de fabricação de uma matriz
US9012324B2 (en) * 2012-08-24 2015-04-21 United Microelectronics Corp. Through silicon via process
KR101851569B1 (ko) 2012-11-28 2018-04-24 삼성전자주식회사 초음파 변환기 및 그 제조방법
CA2898608C (en) * 2013-01-18 2022-01-11 Yale University Methods for making a superconducting device with at least one enclosure
WO2014163728A2 (en) 2013-01-18 2014-10-09 Yale University Superconducting device with at least one enclosure
US9499392B2 (en) 2013-02-05 2016-11-22 Butterfly Network, Inc. CMOS ultrasonic transducers and related apparatus and methods
EP2969914B1 (en) 2013-03-15 2020-01-01 Butterfly Network Inc. Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same
CA2903479C (en) 2013-03-15 2023-10-10 Butterfly Network, Inc. Monolithic ultrasonic imaging devices, systems and methods
US9667889B2 (en) 2013-04-03 2017-05-30 Butterfly Network, Inc. Portable electronic devices with integrated imaging capabilities
WO2015013245A2 (en) 2013-07-23 2015-01-29 Butterfly Network, Inc. Interconnectable ultrasound transducer probes and related methods and apparatus
JP6678102B2 (ja) 2013-10-15 2020-04-08 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 低雑音ジョセフソン接合系方向性増幅器
KR20150046637A (ko) * 2013-10-22 2015-04-30 삼성전자주식회사 광음향 이미지와 초음파 이미지를 위한 광대역 초음파 프로브
JP6621745B2 (ja) * 2013-11-22 2019-12-18 サニーブルック ヘルス サイエンシーズ センター 空間的にセグメント化された表面を有するバッキングを有する超音波トランスデューサ
US9948254B2 (en) 2014-02-21 2018-04-17 Yale University Wireless Josephson bifurcation amplifier
EP3132441B1 (en) * 2014-04-18 2020-11-25 Butterfly Network, Inc. Architecture of single substrate ultrasonic imaging devices, related apparatuses
WO2015161164A1 (en) 2014-04-18 2015-10-22 Butterfly Network, Inc. Ultrasonic imaging compression methods and apparatus
KR102237662B1 (ko) 2014-04-18 2021-04-09 버터플라이 네트워크, 인크. 상보적 금속 산화물 반도체(ｃｍｏｓ) 웨이퍼들 내의 초음파 트랜스듀서들 및 관련 장치 및 방법들
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
WO2016106153A1 (en) * 2014-12-21 2016-06-30 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication
CN107251250A (zh) 2015-02-27 2017-10-13 耶鲁大学 制造量子放大器的技术及相关系统和方法
WO2016138406A1 (en) 2015-02-27 2016-09-01 Yale University Josephson junction-based circulators and related systems and methods
JP6894378B2 (ja) 2015-02-27 2021-06-30 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 平面キュービットを非平面共振器に連結するための技術ならびに関連する系および方法
US10693566B2 (en) 2015-04-17 2020-06-23 Yale University Wireless Josephson parametric converter
US10427188B2 (en) 2015-07-30 2019-10-01 North Carolina State University Anodically bonded vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT)
US9987661B2 (en) 2015-12-02 2018-06-05 Butterfly Network, Inc. Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
JP6883870B2 (ja) 2016-01-15 2021-06-09 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ ２キュービット量子状態の操作のための技術ならびに関連のある系および方法
FR3060844B1 (fr) 2016-12-15 2018-12-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif microelectronique acoustique
US10196261B2 (en) 2017-03-08 2019-02-05 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
TW201908021A (zh) 2017-06-21 2019-03-01 美商蝴蝶網路公司 具有電性隔離的電極部分的個別單元的微加工超音波換能器
WO2019099013A1 (en) 2017-11-16 2019-05-23 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducer with a patterned membrane structure
WO2019118442A1 (en) 2017-12-11 2019-06-20 Yale University Superconducting nonlinear asymmetric inductive element and related systems and methods
WO2019213388A1 (en) * 2018-05-03 2019-11-07 Butterfly Network, Inc. Pressure port for ultrasonic transducer on cmos sensor
US11223355B2 (en) 2018-12-12 2022-01-11 Yale University Inductively-shunted transmon qubit for superconducting circuits
CA3125986A1 (en) 2019-01-17 2020-07-23 Yale University Josephson nonlinear circuit
EP3708263B1 (en) 2019-03-14 2023-08-30 IMEC vzw Flexible ultrasound array
EP3909692A1 (en) * 2020-05-14 2021-11-17 Koninklijke Philips N.V. An ultrasound transducer and a tiled array of ultrasound transducers
FR3114255B1 (fr) * 2020-09-18 2023-05-05 Moduleus Transducteur CMUT
WO2022272217A1 (en) * 2021-06-23 2022-12-29 Boston Scientific Scimed, Inc. Ultrasound transducer
FR3135858B1 (fr) * 2022-05-23 2025-04-18 Vermon Transducteur CMUT et procédé de fabrication d’un transducteur CMUT

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US6958255B2 (en) * 2002-08-08 2005-10-25 The Board Of Trustees Of The Leland Stanford Junior University Micromachined ultrasonic transducers and method of fabrication
US20070166520A1 (en) * 2002-05-23 2007-07-19 Schott Ag Glass material for use at high frequencies
CN101193711A (zh) * 2005-06-07 2008-06-04 皇家飞利浦电子股份有限公司 用于超声传感器组件的多器件衬块
CN101262958A (zh) * 2005-03-04 2008-09-10 国家研究院 制造微加工电容式超声传感器的表面微机械工艺

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JPH08182095A (ja) * 1994-12-26 1996-07-12 Toshiba Corp 超音波トランスジューサとその製造方法
US20070166520A1 (en) * 2002-05-23 2007-07-19 Schott Ag Glass material for use at high frequencies
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CN101262958A (zh) * 2005-03-04 2008-09-10 国家研究院 制造微加工电容式超声传感器的表面微机械工艺
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104701452A (zh) * 2013-12-04 2015-06-10 三星电子株式会社 电容式微加工超声换能器及其制造方法
CN106998522A (zh) * 2016-01-25 2017-08-01 中国科学院苏州纳米技术与纳米仿生研究所 微电容超声传感器

Also Published As

Publication number Publication date
ES2416182T3 (es) 2013-07-30
EP2411163B1 (en) 2013-05-15
EP2662153A1 (en) 2013-11-13
WO2010109205A2 (en) 2010-09-30
EP2659987A1 (en) 2013-11-06
JP2012521704A (ja) 2012-09-13
EP2411163A2 (en) 2012-02-01
JP5744002B2 (ja) 2015-07-01
EP2669019A1 (en) 2013-12-04
US20120074509A1 (en) 2012-03-29
WO2010109205A3 (en) 2011-03-03
DK2411163T3 (da) 2013-06-10

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