ES2416182T3 - Matriz CMUT de unión de ondas con vías conductoras - Google Patents

Matriz CMUT de unión de ondas con vías conductoras Download PDF

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Publication number
ES2416182T3
ES2416182T3 ES10714943T ES10714943T ES2416182T3 ES 2416182 T3 ES2416182 T3 ES 2416182T3 ES 10714943 T ES10714943 T ES 10714943T ES 10714943 T ES10714943 T ES 10714943T ES 2416182 T3 ES2416182 T3 ES 2416182T3
Authority
ES
Spain
Prior art keywords
layer
cmut
wafer
silicon
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES10714943T
Other languages
English (en)
Spanish (es)
Inventor
Sigrid Berg
Kamal Chapagain
Jon Due-Hansen
Kjell Arne Ingebrigtsen
Geir Uri Jensen
Kjersti MIDTBØ
Erik Utne Poppe
Arne RØNNEKLEIV
Dag Thorstein Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Norwegian University of Science and Technology NTNU
Original Assignee
Norwegian University of Science and Technology NTNU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0905256A external-priority patent/GB0905256D0/en
Priority claimed from GB0905255A external-priority patent/GB0905255D0/en
Priority claimed from GB0909296A external-priority patent/GB0909296D0/en
Application filed by Norwegian University of Science and Technology NTNU filed Critical Norwegian University of Science and Technology NTNU
Application granted granted Critical
Publication of ES2416182T3 publication Critical patent/ES2416182T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Bipolar Transistors (AREA)
  • Pressure Sensors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
ES10714943T 2009-03-26 2010-03-26 Matriz CMUT de unión de ondas con vías conductoras Active ES2416182T3 (es)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GB0905256A GB0905256D0 (en) 2009-03-26 2009-03-26 Ultrasound transducer backing layer
GB0905256 2009-03-26
GB0905255 2009-03-26
GB0905255A GB0905255D0 (en) 2009-03-26 2009-03-26 Cmut array
GB0909296 2009-05-28
GB0909296A GB0909296D0 (en) 2009-05-28 2009-05-28 Ultrasound transsducer damping layer
PCT/GB2010/000583 WO2010109205A2 (en) 2009-03-26 2010-03-26 Cmut array

Publications (1)

Publication Number Publication Date
ES2416182T3 true ES2416182T3 (es) 2013-07-30

Family

ID=42308937

Family Applications (1)

Application Number Title Priority Date Filing Date
ES10714943T Active ES2416182T3 (es) 2009-03-26 2010-03-26 Matriz CMUT de unión de ondas con vías conductoras

Country Status (7)

Country Link
US (1) US20120074509A1 (enExample)
EP (4) EP2659987A1 (enExample)
JP (1) JP5744002B2 (enExample)
CN (1) CN102427890A (enExample)
DK (1) DK2411163T3 (enExample)
ES (1) ES2416182T3 (enExample)
WO (1) WO2010109205A2 (enExample)

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US9220415B2 (en) * 2011-10-25 2015-12-29 Andreas Mandelis Systems and methods for frequency-domain photoacoustic phased array imaging
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US9917535B2 (en) * 2012-05-31 2018-03-13 Koninklujke Philips N.V. Wafer and method of manufacturing the same
US9012324B2 (en) * 2012-08-24 2015-04-21 United Microelectronics Corp. Through silicon via process
KR101851569B1 (ko) 2012-11-28 2018-04-24 삼성전자주식회사 초음파 변환기 및 그 제조방법
US10424712B2 (en) * 2013-01-18 2019-09-24 Yale University Methods for making a superconducting device with at least one enclosure
SG11201505616YA (en) 2013-01-18 2015-09-29 Univ Yale Superconducting device with at least one enclosure
US9533873B2 (en) 2013-02-05 2017-01-03 Butterfly Network, Inc. CMOS ultrasonic transducers and related apparatus and methods
EP2972473B1 (en) 2013-03-15 2023-06-07 BFLY Operations, Inc. Monolithic ultrasonic imaging devices, systems and methods
KR102170559B1 (ko) 2013-03-15 2020-10-27 버터플라이 네트워크, 인크. 상보성 금속 산화물 반도체(cmos) 초음파 트랜스듀서
US9667889B2 (en) 2013-04-03 2017-05-30 Butterfly Network, Inc. Portable electronic devices with integrated imaging capabilities
EP3024594A2 (en) 2013-07-23 2016-06-01 Butterfly Network Inc. Interconnectable ultrasound transducer probes and related methods and apparatus
CA2927326C (en) 2013-10-15 2024-02-27 Yale University Low-noise josephson junction-based directional amplifier
KR20150046637A (ko) * 2013-10-22 2015-04-30 삼성전자주식회사 광음향 이미지와 초음파 이미지를 위한 광대역 초음파 프로브
JP6621745B2 (ja) * 2013-11-22 2019-12-18 サニーブルック ヘルス サイエンシーズ センター 空間的にセグメント化された表面を有するバッキングを有する超音波トランスデューサ
KR20150065067A (ko) * 2013-12-04 2015-06-12 삼성전자주식회사 정전용량 미세가공 초음파 변환기 및 그 제조방법
US9948254B2 (en) 2014-02-21 2018-04-17 Yale University Wireless Josephson bifurcation amplifier
AU2015247484B2 (en) 2014-04-18 2020-05-14 Butterfly Network, Inc. Ultrasonic transducers in complementary metal oxide semiconductor (CMOS) wafers and related apparatus and methods
CA2946120C (en) * 2014-04-18 2022-10-25 Butterfly Network, Inc. Architecture of single substrate ultrasonic imaging devices, related apparatuses, and methods
JP6546267B2 (ja) 2014-04-18 2019-07-17 バタフライ ネットワーク，インコーポレイテッド 超音波撮像圧縮方法及び装置
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
EP3233311B1 (en) * 2014-12-21 2021-12-08 Chirp Microsystems, Inc. Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication
CN107251435B (zh) 2015-02-27 2021-03-12 耶鲁大学 基于约瑟夫逊结的循环器以及相关系统和方法
EP3262573B1 (en) 2015-02-27 2024-04-03 Yale University Techniques for coupling planar qubits to non-planar resonators and related systems and methods
CA2977968C (en) 2015-02-27 2023-10-17 Yale University Techniques for producing quantum amplifiers and related systems and methods
WO2016168642A1 (en) 2015-04-17 2016-10-20 Yale University Wireless josephson parametric converter
US10427188B2 (en) 2015-07-30 2019-10-01 North Carolina State University Anodically bonded vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT)
US9987661B2 (en) 2015-12-02 2018-06-05 Butterfly Network, Inc. Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
JP6883870B2 (ja) 2016-01-15 2021-06-09 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ ２キュービット量子状態の操作のための技術ならびに関連のある系および方法
CN106998522B (zh) * 2016-01-25 2023-07-28 中国科学院苏州纳米技术与纳米仿生研究所 微电容超声传感器
FR3060844B1 (fr) 2016-12-15 2018-12-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif microelectronique acoustique
US10196261B2 (en) 2017-03-08 2019-02-05 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
WO2018236956A1 (en) 2017-06-21 2018-12-27 Butterfly Network, Inc. Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections
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WO2019118442A1 (en) 2017-12-11 2019-06-20 Yale University Superconducting nonlinear asymmetric inductive element and related systems and methods
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US11223355B2 (en) 2018-12-12 2022-01-11 Yale University Inductively-shunted transmon qubit for superconducting circuits
WO2020150348A1 (en) 2019-01-17 2020-07-23 Yale University Josephson nonlinear circuit
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FR3114255B1 (fr) * 2020-09-18 2023-05-05 Moduleus Transducteur CMUT
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FR3135858B1 (fr) * 2022-05-23 2025-04-18 Vermon Transducteur CMUT et procédé de fabrication d’un transducteur CMUT

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Also Published As

Publication number Publication date
US20120074509A1 (en) 2012-03-29
DK2411163T3 (da) 2013-06-10
EP2411163A2 (en) 2012-02-01
JP5744002B2 (ja) 2015-07-01
WO2010109205A2 (en) 2010-09-30
EP2659987A1 (en) 2013-11-06
EP2662153A1 (en) 2013-11-13
WO2010109205A3 (en) 2011-03-03
JP2012521704A (ja) 2012-09-13
CN102427890A (zh) 2012-04-25
EP2669019A1 (en) 2013-12-04
EP2411163B1 (en) 2013-05-15

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