JP6144752B2 - 高周波数cmut - Google Patents
高周波数cmut Download PDFInfo
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- JP6144752B2 JP6144752B2 JP2015501818A JP2015501818A JP6144752B2 JP 6144752 B2 JP6144752 B2 JP 6144752B2 JP 2015501818 A JP2015501818 A JP 2015501818A JP 2015501818 A JP2015501818 A JP 2015501818A JP 6144752 B2 JP6144752 B2 JP 6144752B2
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- 238000000034 method Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 62
- 229910021332 silicide Inorganic materials 0.000 claims description 50
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 238000002161 passivation Methods 0.000 claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 description 46
- 239000004065 semiconductor Substances 0.000 description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 33
- 238000007254 oxidation reaction Methods 0.000 description 25
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 20
- 239000012528 membrane Substances 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000010261 cell growth Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2406—Electrostatic or capacitive probes, e.g. electret or cMUT-probes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Pressure Sensors (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Micromachines (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Claims (18)
- トランスデューサ構造であって、
或る導電型と表面領域とを有する基板と、
前記基板に接する後構造であって、頂部表面を有し、非導電性である前記後構造と、
前記後構造の前記頂部表面に接する第1の導電構造であって、前記第1の導電構造が、頂部表面を有し、前記基板の前記表面領域の上にあって前記表面領域から離間しており、前記第1の導電構造の前記頂部表面が、中央領域と周りの周辺領域とを有する、前記第1の導電構造と、
前記第1の導電構造の前記周辺領域に接する第2の導電構造であって、前記第1の導電構造の前記頂部表面の前記中央領域を露出させるように前記第2の導電構造を完全に貫通して延びる開口を有する、前記第2の導電構造と、
を含み、
前記第2の導電構造が前記後構造の前記頂部表面に接する、トランスデューサ構造。 - 請求項1に記載のトランスデューサ構造であって、
前記第2の導電構造が頂部表面を有し、前記第2の導電構造の前記頂部表面が接合パッド領域を有する、トランスデューサ構造。 - 請求項1に記載のトランスデューサ構造であって、
前記第1の導電構造が、シリコン膜と、前記シリコン膜に接して前記シリコン膜に重なる、金属シリサイドプレートとを含む、トランスデューサ構造。 - 請求項3に記載のトランスデューサ構造であって、
前記基板の前記表面領域に接する非導電構造を更に含む、トランスデューサ構造。 - 請求項4に記載のトランスデューサ構造であって、
前記シリコン膜と前記非導電構造との間にあり、前記シリコン膜と前記非導電構造とに接する、真空密封キャビティを更に含む、トランスデューサ構造。 - 請求項1に記載のトランスデューサ構造であって、
前記基板に接する金属シリサイドパッドと、
前記金属シリサイドパッドに接する導電接合パッドと、
を更に含み、
前記後構造が、前記導電接合パッドの一部に接し、前記導電接合パッドの前記一部を水平方向に囲む、トランスデューサ構造。 - 請求項1に記載のトランスデューサ構造であって、
前記第2の導電構造に接するパッシベーション構造を更に含み、前記パッシベーション構造が、前記第1の導電構造の前記中央領域を露出させる開口を有する、トランスデューサ構造。 - 請求項1に記載のトランスデューサ構造であって、
前記基板の底部表面に接する導電接合パッドを更に含む、トランスデューサ構造。 - 請求項1に記載のトランスデューサ構造であって、
前記後構造が前記表面領域を横方向に囲む、トランスデューサ構造。 - トランスデューサ構造を形成する方法であって、
基板に接する後構造を形成することであって、前記後構造が頂部表面を有し非導電性であり、前記基板が或る導電型及び表面領域を有する、前記後構造を形成することと、
前記後構造の前記頂部表面に接する第1の導電構造を形成することであって、前記第1の導電構造が、頂部表面を有し、前記基板の前記表面領域の上にあって前記表面領域から離間されており、前記第1の導電構造の前記頂部表面が中央領域と周りの周辺領域とを有する、前記第1の導電構造を形成することと、
前記第1の導電構造の前記周辺領域に接する第2の導電構造を形成することであって、前記第2の導電構造が、前記第1の導電構造の前記頂部表面の前記中央領域を露出させるように前記第2の導電構造を完全に貫通して延びる開口を有する、前記第2の導電構造を形成することと、
を含み、
前記第2の導電構造が前記後構造の前記頂部表面に接する、方法。 - 請求項10に記載の方法であって、
前記第1の導電構造を形成することが、
膜を形成するように前記後構造に接する基板構造をエッチングすることと、
前記第1の導電構造を形成するように前記膜をシリサイド化することと、
を含む、方法。 - 請求項10に記載の方法であって、
前記第1の導電構造が、シリコン膜と、前記シリコン膜に接して前記シリコン膜に重なる金属シリサイドプレートとを含む、方法。 - 請求項12に記載の方法であって、
前記基板の前記表面領域に接する非導電構造を形成することを更に含む、方法。
- 請求項13に記載の方法であって、
前記シリコン膜と前記非導電構造の間にあって前記シリコン膜と前記非導電構造に接する真空密封キャビティを形成することを更に含む、方法。 - 請求項10に記載の方法であって、
前記基板に接する金属シリサイドパッドを形成することと、
前記金属シリサイドパッドに接する導電接合パッドを形成することと、
を更に含み、
前記後構造が、前記導電接合パッドの一部に接し、前記導電接合パッドの前記一部を水平方向に囲む、方法。 - 請求項10に記載の方法であって、
前記第2の導電構造に接するパッシベーション構造を形成することを更に含み、前記パッシベーション構造が、前記第1の導電構造の前記中央領域を露出させる開口を有する、方法。 - 請求項10に記載の方法であって、
前記基板の底部表面に接する導電接合パッドを形成することを更に含む、方法。 - 請求項10に記載の方法であって、
前記後構造が前記表面領域を横方向に囲む、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/427,856 US8541853B1 (en) | 2012-03-22 | 2012-03-22 | High frequency CMUT |
US13/427,856 | 2012-03-22 | ||
PCT/US2013/032437 WO2013142367A1 (en) | 2012-03-22 | 2013-03-15 | High frequency cmut |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015519769A JP2015519769A (ja) | 2015-07-09 |
JP2015519769A5 JP2015519769A5 (ja) | 2016-05-12 |
JP6144752B2 true JP6144752B2 (ja) | 2017-06-07 |
Family
ID=49181469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015501818A Active JP6144752B2 (ja) | 2012-03-22 | 2013-03-15 | 高周波数cmut |
Country Status (4)
Country | Link |
---|---|
US (1) | US8541853B1 (ja) |
JP (1) | JP6144752B2 (ja) |
CN (1) | CN104160721A (ja) |
WO (1) | WO2013142367A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9351081B2 (en) * | 2013-02-27 | 2016-05-24 | Texas Instruments Incorporated | Capacitive micromachined ultrasonic transducer (CMUT) with through-substrate via (TSV) substrate plug |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6430109B1 (en) | 1999-09-30 | 2002-08-06 | The Board Of Trustees Of The Leland Stanford Junior University | Array of capacitive micromachined ultrasonic transducer elements with through wafer via connections |
ITRM20010243A1 (it) | 2001-05-09 | 2002-11-11 | Consiglio Nazionale Ricerche | Procedimento micromeccanico superficiale per la realizzazione di trasduttori elettro-acustici, in particolare trasduttori ad ultrasuoni, rel |
US6958255B2 (en) | 2002-08-08 | 2005-10-25 | The Board Of Trustees Of The Leland Stanford Junior University | Micromachined ultrasonic transducers and method of fabrication |
US20040190377A1 (en) * | 2003-03-06 | 2004-09-30 | Lewandowski Robert Stephen | Method and means for isolating elements of a sensor array |
US7545075B2 (en) | 2004-06-04 | 2009-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Capacitive micromachined ultrasonic transducer array with through-substrate electrical connection and method of fabricating same |
US7489593B2 (en) | 2004-11-30 | 2009-02-10 | Vermon | Electrostatic membranes for sensors, ultrasonic transducers incorporating such membranes, and manufacturing methods therefor |
US7449356B2 (en) * | 2005-04-25 | 2008-11-11 | Analog Devices, Inc. | Process of forming a microphone using support member |
JP4811035B2 (ja) * | 2006-01-31 | 2011-11-09 | パナソニック電工株式会社 | 音響センサ |
JP5269090B2 (ja) * | 2007-12-03 | 2013-08-21 | コロ テクノロジーズ インコーポレイテッド | 静電変換器およびアレイにおけるスルーウエハ相互接続部 |
JP5550363B2 (ja) * | 2010-01-26 | 2014-07-16 | キヤノン株式会社 | 静電容量型電気機械変換装置 |
-
2012
- 2012-03-22 US US13/427,856 patent/US8541853B1/en active Active
-
2013
- 2013-03-15 CN CN201380011962.0A patent/CN104160721A/zh active Pending
- 2013-03-15 JP JP2015501818A patent/JP6144752B2/ja active Active
- 2013-03-15 WO PCT/US2013/032437 patent/WO2013142367A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20130249023A1 (en) | 2013-09-26 |
WO2013142367A1 (en) | 2013-09-26 |
JP2015519769A (ja) | 2015-07-09 |
US8541853B1 (en) | 2013-09-24 |
CN104160721A (zh) | 2014-11-19 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |