JP5743478B2 - 気体感応型の半導体装置 - Google Patents

気体感応型の半導体装置 Download PDF

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JP5743478B2
JP5743478B2 JP2010227225A JP2010227225A JP5743478B2 JP 5743478 B2 JP5743478 B2 JP 5743478B2 JP 2010227225 A JP2010227225 A JP 2010227225A JP 2010227225 A JP2010227225 A JP 2010227225A JP 5743478 B2 JP5743478 B2 JP 5743478B2
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channel
semiconductor
electrode
gate electrode
gas
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Japanese (ja)
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JP2011080996A (ja
JP2011080996A5 (enExample
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クンツ デニス
クンツ デニス
ヴィデンマイアー マルクス
ヴィデンマイアー マルクス
マルティン アレクサンダー
マルティン アレクサンダー
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases

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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2010227225A 2009-10-08 2010-10-07 気体感応型の半導体装置 Expired - Fee Related JP5743478B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009045475.6A DE102009045475B4 (de) 2009-10-08 2009-10-08 Gassensitive Halbleitervorrichtung sowie deren Verwendung
DE102009045475.6 2009-10-08

Publications (3)

Publication Number Publication Date
JP2011080996A JP2011080996A (ja) 2011-04-21
JP2011080996A5 JP2011080996A5 (enExample) 2013-09-12
JP5743478B2 true JP5743478B2 (ja) 2015-07-01

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JP2010227225A Expired - Fee Related JP5743478B2 (ja) 2009-10-08 2010-10-07 気体感応型の半導体装置

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US (1) US8513711B2 (enExample)
JP (1) JP5743478B2 (enExample)
CN (1) CN102033095B (enExample)
DE (1) DE102009045475B4 (enExample)
FR (1) FR2951273B1 (enExample)

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DE102009045475B4 (de) * 2009-10-08 2023-06-29 Robert Bosch Gmbh Gassensitive Halbleitervorrichtung sowie deren Verwendung
DE102012211460A1 (de) * 2012-07-03 2014-01-09 Robert Bosch Gmbh Gassensor und Verfahren zum Herstellen eines solchen
DE102012213530A1 (de) 2012-08-01 2014-02-06 Robert Bosch Gmbh Verfahren und Messgerät zum Bestimmen eines Zustands eines Halbleitermaterials eines von einem Hersteller getesteten und ausgelieferten chemosensitiven Feldeffekttransistors
DE102012213533A1 (de) 2012-08-01 2014-02-06 Robert Bosch Gmbh Halbleiterbauelement und Verfahren zum Bestimmen eines Zustands eines Halbleitermaterials des Halbleiterbauelements
CN103308563A (zh) * 2013-05-16 2013-09-18 黑龙江大学 一种以单壁碳纳米管/酞菁复合材料为氨敏材料的气敏元件及其制备方法
US10770573B2 (en) * 2018-09-20 2020-09-08 Tower Semiconductor Ltd. Apparatus, system and method of an electrostatically formed nanowire (EFN)
CN109580725B (zh) * 2018-12-10 2020-06-26 华中科技大学 基于天线结构的二维过渡金属硫化物气体传感器及制备
CN111380926B (zh) * 2018-12-28 2023-05-26 鸿富锦精密工业（深圳）有限公司 气体感测器及其制备方法
CN115420788B (zh) * 2022-09-01 2025-09-09 湘潭大学 用于多种气体识别的碳基薄膜晶体管型传感器阵列及其制备方法
CN117783244B (zh) * 2023-12-11 2024-12-10 哈尔滨工业大学 传感器敏感模块、钌岛增强氨气传感器和氨气中氨分子检测方法

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Also Published As

Publication number Publication date
CN102033095B (zh) 2015-04-01
DE102009045475B4 (de) 2023-06-29
US20110121368A1 (en) 2011-05-26
FR2951273B1 (fr) 2014-07-04
FR2951273A1 (fr) 2011-04-15
US8513711B2 (en) 2013-08-20
CN102033095A (zh) 2011-04-27
JP2011080996A (ja) 2011-04-21
DE102009045475A1 (de) 2011-04-14

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