JPS5672339A - Fet multisensor - Google Patents

Fet multisensor

Info

Publication number
JPS5672339A
JPS5672339A JP14913979A JP14913979A JPS5672339A JP S5672339 A JPS5672339 A JP S5672339A JP 14913979 A JP14913979 A JP 14913979A JP 14913979 A JP14913979 A JP 14913979A JP S5672339 A JPS5672339 A JP S5672339A
Authority
JP
Japan
Prior art keywords
sensor
multisensor
ion
fet
thr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14913979A
Other languages
Japanese (ja)
Inventor
Makoto Yano
Hayami Yoshimochi
Kiyoo Shimada
Kyoichiro Shibatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kuraray Co Ltd
Original Assignee
Kuraray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kuraray Co Ltd filed Critical Kuraray Co Ltd
Priority to JP14913979A priority Critical patent/JPS5672339A/en
Publication of JPS5672339A publication Critical patent/JPS5672339A/en
Pending legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To enable stable measurement, by putting each characteristic of each sensor into a specific range, constituting a multisensor.
CONSTITUTION: A composite sensor has an ion sensing film, which responds to various ions in electrolyte, on the uppermost surface of each gate of plural insulating gas type field effect transistor constructions formed on the same substrate. The threshold voltage Vth, temperature dependancy and drain current IDSS for each ion sensor are selected to satisfy the relation in thr right formulas.
COPYRIGHT: (C)1981,JPO&Japio
JP14913979A 1979-11-16 1979-11-16 Fet multisensor Pending JPS5672339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14913979A JPS5672339A (en) 1979-11-16 1979-11-16 Fet multisensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14913979A JPS5672339A (en) 1979-11-16 1979-11-16 Fet multisensor

Publications (1)

Publication Number Publication Date
JPS5672339A true JPS5672339A (en) 1981-06-16

Family

ID=15468600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14913979A Pending JPS5672339A (en) 1979-11-16 1979-11-16 Fet multisensor

Country Status (1)

Country Link
JP (1) JPS5672339A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924244A (en) * 1982-08-02 1984-02-07 Hitachi Ltd Field effect transistor type multi-ion sensor and preparation thereof
JPS59206756A (en) * 1983-05-11 1984-11-22 Hitachi Ltd Fet chemical sensor combined with reference electrode
JP2011080996A (en) * 2009-10-08 2011-04-21 Robert Bosch Gmbh Gas sensitive semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924244A (en) * 1982-08-02 1984-02-07 Hitachi Ltd Field effect transistor type multi-ion sensor and preparation thereof
JPH0358061B2 (en) * 1982-08-02 1991-09-04 Hitachi Ltd
JPS59206756A (en) * 1983-05-11 1984-11-22 Hitachi Ltd Fet chemical sensor combined with reference electrode
JPH0469338B2 (en) * 1983-05-11 1992-11-05 Hitachi Ltd
JP2011080996A (en) * 2009-10-08 2011-04-21 Robert Bosch Gmbh Gas sensitive semiconductor device

Similar Documents

Publication Publication Date Title
JPS5672339A (en) Fet multisensor
JPS5365066A (en) Semiconductor device
JPS5323281A (en) Charge transfer el ement
JPS57197456A (en) Metallic ion detector
JPS5267982A (en) Manufacture of schottky barrier type field effect transistor
JPS5246498A (en) Moisture sensitive resistance element
JPS55117955A (en) Semiconductor sensor and impurity detection method
JPS52128080A (en) Junction-type field effect transistor
JPS5267963A (en) Manufacture of semiconductor unit
JPS5679245A (en) Ion sensor
JPS52100877A (en) Field effect transistor of junction type
JPS5354978A (en) Insulated gate type field effect element
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS5312375A (en) Hygrometer
JPS53116069A (en) Measuring method for amount of ion injection
JPS51127683A (en) Manufacturing process of insulation gate-type electric field transisto r
JPS57104269A (en) Load detecting element
JPS5270884A (en) Moisture sensitive element
JPS5793247A (en) Ion measuring device
JPS5432379A (en) Humidity sensor
JPS52124876A (en) Insulated gate type field effect semiconductor
JPS52115675A (en) Semiconductor strain gauge
JPS5246497A (en) Moisture sensitive resistance element
JPS52147983A (en) Insulation gate type semiconductor device
JPS5344072A (en) Detector element