JPS5354978A - Insulated gate type field effect element - Google Patents
Insulated gate type field effect elementInfo
- Publication number
- JPS5354978A JPS5354978A JP12944776A JP12944776A JPS5354978A JP S5354978 A JPS5354978 A JP S5354978A JP 12944776 A JP12944776 A JP 12944776A JP 12944776 A JP12944776 A JP 12944776A JP S5354978 A JPS5354978 A JP S5354978A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- type field
- insulated gate
- effect element
- gate type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain an IGFET of stable characteristics by using a material composed of one of Ta or Nb of a high melting point and high sdhesion to insulation films and Si.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12944776A JPS5354978A (en) | 1976-10-29 | 1976-10-29 | Insulated gate type field effect element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12944776A JPS5354978A (en) | 1976-10-29 | 1976-10-29 | Insulated gate type field effect element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5354978A true JPS5354978A (en) | 1978-05-18 |
Family
ID=15009692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12944776A Pending JPS5354978A (en) | 1976-10-29 | 1976-10-29 | Insulated gate type field effect element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5354978A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS609160A (en) * | 1983-06-28 | 1985-01-18 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPS6050961A (en) * | 1983-08-30 | 1985-03-22 | Toshiba Corp | Manufacture of semiconductor device |
JPS6057975A (en) * | 1983-09-09 | 1985-04-03 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1976
- 1976-10-29 JP JP12944776A patent/JPS5354978A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS609160A (en) * | 1983-06-28 | 1985-01-18 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPH0329189B2 (en) * | 1983-06-28 | 1991-04-23 | Matsushita Electric Ind Co Ltd | |
JPS6050961A (en) * | 1983-08-30 | 1985-03-22 | Toshiba Corp | Manufacture of semiconductor device |
JPS6057975A (en) * | 1983-09-09 | 1985-04-03 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
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