JPS5354978A - Insulated gate type field effect element - Google Patents

Insulated gate type field effect element

Info

Publication number
JPS5354978A
JPS5354978A JP12944776A JP12944776A JPS5354978A JP S5354978 A JPS5354978 A JP S5354978A JP 12944776 A JP12944776 A JP 12944776A JP 12944776 A JP12944776 A JP 12944776A JP S5354978 A JPS5354978 A JP S5354978A
Authority
JP
Japan
Prior art keywords
field effect
type field
insulated gate
effect element
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12944776A
Other languages
Japanese (ja)
Inventor
Kenji Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12944776A priority Critical patent/JPS5354978A/en
Publication of JPS5354978A publication Critical patent/JPS5354978A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain an IGFET of stable characteristics by using a material composed of one of Ta or Nb of a high melting point and high sdhesion to insulation films and Si.
COPYRIGHT: (C)1978,JPO&Japio
JP12944776A 1976-10-29 1976-10-29 Insulated gate type field effect element Pending JPS5354978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12944776A JPS5354978A (en) 1976-10-29 1976-10-29 Insulated gate type field effect element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12944776A JPS5354978A (en) 1976-10-29 1976-10-29 Insulated gate type field effect element

Publications (1)

Publication Number Publication Date
JPS5354978A true JPS5354978A (en) 1978-05-18

Family

ID=15009692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12944776A Pending JPS5354978A (en) 1976-10-29 1976-10-29 Insulated gate type field effect element

Country Status (1)

Country Link
JP (1) JPS5354978A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609160A (en) * 1983-06-28 1985-01-18 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS6050961A (en) * 1983-08-30 1985-03-22 Toshiba Corp Manufacture of semiconductor device
JPS6057975A (en) * 1983-09-09 1985-04-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609160A (en) * 1983-06-28 1985-01-18 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPH0329189B2 (en) * 1983-06-28 1991-04-23 Matsushita Electric Ind Co Ltd
JPS6050961A (en) * 1983-08-30 1985-03-22 Toshiba Corp Manufacture of semiconductor device
JPS6057975A (en) * 1983-09-09 1985-04-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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