FR2951273B1 - Dispositif semi-conducteur sensible aux gaz - Google Patents

Dispositif semi-conducteur sensible aux gaz

Info

Publication number
FR2951273B1
FR2951273B1 FR1058090A FR1058090A FR2951273B1 FR 2951273 B1 FR2951273 B1 FR 2951273B1 FR 1058090 A FR1058090 A FR 1058090A FR 1058090 A FR1058090 A FR 1058090A FR 2951273 B1 FR2951273 B1 FR 2951273B1
Authority
FR
France
Prior art keywords
semiconductor device
gas sensitive
sensitive semiconductor
gas
sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1058090A
Other languages
English (en)
Other versions
FR2951273A1 (fr
Inventor
Denis Kunz
Markus Widenmeyer
Alexander Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2951273A1 publication Critical patent/FR2951273A1/fr
Application granted granted Critical
Publication of FR2951273B1 publication Critical patent/FR2951273B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR1058090A 2009-10-08 2010-10-06 Dispositif semi-conducteur sensible aux gaz Active FR2951273B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009045475.6A DE102009045475B4 (de) 2009-10-08 2009-10-08 Gassensitive Halbleitervorrichtung sowie deren Verwendung

Publications (2)

Publication Number Publication Date
FR2951273A1 FR2951273A1 (fr) 2011-04-15
FR2951273B1 true FR2951273B1 (fr) 2014-07-04

Family

ID=43734441

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1058090A Active FR2951273B1 (fr) 2009-10-08 2010-10-06 Dispositif semi-conducteur sensible aux gaz

Country Status (5)

Country Link
US (1) US8513711B2 (fr)
JP (1) JP5743478B2 (fr)
CN (1) CN102033095B (fr)
DE (1) DE102009045475B4 (fr)
FR (1) FR2951273B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009045475B4 (de) * 2009-10-08 2023-06-29 Robert Bosch Gmbh Gassensitive Halbleitervorrichtung sowie deren Verwendung
DE102012211460A1 (de) * 2012-07-03 2014-01-09 Robert Bosch Gmbh Gassensor und Verfahren zum Herstellen eines solchen
DE102012213533A1 (de) * 2012-08-01 2014-02-06 Robert Bosch Gmbh Halbleiterbauelement und Verfahren zum Bestimmen eines Zustands eines Halbleitermaterials des Halbleiterbauelements
DE102012213530A1 (de) 2012-08-01 2014-02-06 Robert Bosch Gmbh Verfahren und Messgerät zum Bestimmen eines Zustands eines Halbleitermaterials eines von einem Hersteller getesteten und ausgelieferten chemosensitiven Feldeffekttransistors
CN103308563A (zh) * 2013-05-16 2013-09-18 黑龙江大学 一种以单壁碳纳米管/酞菁复合材料为氨敏材料的气敏元件及其制备方法
US10770573B2 (en) * 2018-09-20 2020-09-08 Tower Semiconductor Ltd. Apparatus, system and method of an electrostatically formed nanowire (EFN)
CN109580725B (zh) * 2018-12-10 2020-06-26 华中科技大学 基于天线结构的二维过渡金属硫化物气体传感器及制备
TWI740325B (zh) * 2018-12-28 2021-09-21 鴻海精密工業股份有限公司 氣體感測器及其製備方法
CN117783244A (zh) * 2023-12-11 2024-03-29 哈尔滨工业大学 传感器敏感模块、钌岛增强氨气传感器和氨气中氨分子检测方法

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CN1926248B (zh) * 2004-02-27 2010-04-07 技术资源有限公司 直接熔炼设备及方法
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JP2005285822A (ja) 2004-03-26 2005-10-13 Fujitsu Ltd 半導体装置および半導体センサ
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DE102005033226A1 (de) 2005-07-15 2007-01-25 Siemens Ag Verfahren zur gleichzeitigen Detektion mehrerer unterschiedlicher Luftbelastungen
DE102008042139A1 (de) * 2008-09-16 2010-03-18 Robert Bosch Gmbh Abgastaugliche Schutzschichten für Hochtemperatur ChemFET Abgassensoren
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DE102009045475B4 (de) * 2009-10-08 2023-06-29 Robert Bosch Gmbh Gassensitive Halbleitervorrichtung sowie deren Verwendung
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JP5959516B2 (ja) * 2010-08-18 2016-08-02 ライフ テクノロジーズ コーポレーション 電気化学的検出装置のためのマイクロウェルの化学コーティング法

Also Published As

Publication number Publication date
FR2951273A1 (fr) 2011-04-15
CN102033095B (zh) 2015-04-01
US20110121368A1 (en) 2011-05-26
JP5743478B2 (ja) 2015-07-01
DE102009045475B4 (de) 2023-06-29
DE102009045475A1 (de) 2011-04-14
CN102033095A (zh) 2011-04-27
JP2011080996A (ja) 2011-04-21
US8513711B2 (en) 2013-08-20

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