JP2011080996A5 - - Google Patents

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Publication number
JP2011080996A5
JP2011080996A5 JP2010227225A JP2010227225A JP2011080996A5 JP 2011080996 A5 JP2011080996 A5 JP 2011080996A5 JP 2010227225 A JP2010227225 A JP 2010227225A JP 2010227225 A JP2010227225 A JP 2010227225A JP 2011080996 A5 JP2011080996 A5 JP 2011080996A5
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JP
Japan
Prior art keywords
channel
electrode
semiconductor device
semiconductor
gate electrode
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JP2010227225A
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English (en)
Japanese (ja)
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JP2011080996A (ja
JP5743478B2 (ja
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Priority claimed from DE102009045475.6A external-priority patent/DE102009045475B4/de
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Publication of JP2011080996A publication Critical patent/JP2011080996A/ja
Publication of JP2011080996A5 publication Critical patent/JP2011080996A5/ja
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Publication of JP5743478B2 publication Critical patent/JP5743478B2/ja
Expired - Fee Related legal-status Critical Current
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JP2010227225A 2009-10-08 2010-10-07 気体感応型の半導体装置 Expired - Fee Related JP5743478B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009045475.6A DE102009045475B4 (de) 2009-10-08 2009-10-08 Gassensitive Halbleitervorrichtung sowie deren Verwendung
DE102009045475.6 2009-10-08

Publications (3)

Publication Number Publication Date
JP2011080996A JP2011080996A (ja) 2011-04-21
JP2011080996A5 true JP2011080996A5 (enExample) 2013-09-12
JP5743478B2 JP5743478B2 (ja) 2015-07-01

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ID=43734441

Family Applications (1)

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JP2010227225A Expired - Fee Related JP5743478B2 (ja) 2009-10-08 2010-10-07 気体感応型の半導体装置

Country Status (5)

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US (1) US8513711B2 (enExample)
JP (1) JP5743478B2 (enExample)
CN (1) CN102033095B (enExample)
DE (1) DE102009045475B4 (enExample)
FR (1) FR2951273B1 (enExample)

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DE102012211460A1 (de) * 2012-07-03 2014-01-09 Robert Bosch Gmbh Gassensor und Verfahren zum Herstellen eines solchen
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DE102012213533A1 (de) 2012-08-01 2014-02-06 Robert Bosch Gmbh Halbleiterbauelement und Verfahren zum Bestimmen eines Zustands eines Halbleitermaterials des Halbleiterbauelements
CN103308563A (zh) * 2013-05-16 2013-09-18 黑龙江大学 一种以单壁碳纳米管/酞菁复合材料为氨敏材料的气敏元件及其制备方法
US10770573B2 (en) * 2018-09-20 2020-09-08 Tower Semiconductor Ltd. Apparatus, system and method of an electrostatically formed nanowire (EFN)
CN109580725B (zh) * 2018-12-10 2020-06-26 华中科技大学 基于天线结构的二维过渡金属硫化物气体传感器及制备
CN111380926B (zh) * 2018-12-28 2023-05-26 鸿富锦精密工业（深圳）有限公司 气体感测器及其制备方法
CN115420788B (zh) * 2022-09-01 2025-09-09 湘潭大学 用于多种气体识别的碳基薄膜晶体管型传感器阵列及其制备方法
CN117783244B (zh) * 2023-12-11 2024-12-10 哈尔滨工业大学 传感器敏感模块、钌岛增强氨气传感器和氨气中氨分子检测方法

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