JP5723621B2 - 電界効果トランジスタ - Google Patents

電界効果トランジスタ Download PDF

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Publication number
JP5723621B2
JP5723621B2 JP2011025764A JP2011025764A JP5723621B2 JP 5723621 B2 JP5723621 B2 JP 5723621B2 JP 2011025764 A JP2011025764 A JP 2011025764A JP 2011025764 A JP2011025764 A JP 2011025764A JP 5723621 B2 JP5723621 B2 JP 5723621B2
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semiconductor layer
conductor electrode
conductor
electrode
semiconductor
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Japanese (ja)
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JP2011187949A5 (enExample
JP2011187949A (ja
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竹村　保彦
保彦 竹村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2011187949A5 publication Critical patent/JP2011187949A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels

Landscapes

  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011025764A 2010-02-10 2011-02-09 電界効果トランジスタ Active JP5723621B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011025764A JP5723621B2 (ja) 2010-02-10 2011-02-09 電界効果トランジスタ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010027835 2010-02-10
JP2010027835 2010-02-10
JP2011025764A JP5723621B2 (ja) 2010-02-10 2011-02-09 電界効果トランジスタ

Related Child Applications (1)

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JP2015069656A Division JP6013543B2 (ja) 2010-02-10 2015-03-30 電界効果トランジスタ

Publications (3)

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JP2011187949A JP2011187949A (ja) 2011-09-22
JP2011187949A5 JP2011187949A5 (enExample) 2014-03-27
JP5723621B2 true JP5723621B2 (ja) 2015-05-27

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JP2011025764A Active JP5723621B2 (ja) 2010-02-10 2011-02-09 電界効果トランジスタ
JP2015069656A Expired - Fee Related JP6013543B2 (ja) 2010-02-10 2015-03-30 電界効果トランジスタ

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Country Link
US (1) US8492853B2 (enExample)
JP (2) JP5723621B2 (enExample)
KR (1) KR101810261B1 (enExample)
TW (1) TWI536566B (enExample)
WO (1) WO2011099342A1 (enExample)

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JP2015128189A (ja) 2015-07-09
JP6013543B2 (ja) 2016-10-25
JP2011187949A (ja) 2011-09-22
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US8492853B2 (en) 2013-07-23
US20110193078A1 (en) 2011-08-11

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