JP5719360B2 - 半導体チップ及びこれの製造方法 - Google Patents
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Description
本出願は、本出願と同日に提出された米国特許出願第12/505603号と関係する主題を包含する。該関係出願は、参照することによりその全体が本明細書に組み込まれる。
本発明の例示的且つ非限定的な実施形態は、一般に、トランジスタおよびそれらの製品などの電子デバイスであって、半導体ウエハまたはチップ上に形成可能なデバイスに関する。
δμ/μ=−πTσT−πVσV−πLσL [1]
は、移動度δμ/μの(無次元の)変化が、さまざまな方向T、V、およびL(これらは、どの個別FETの実施形態においても、図6A〜6Bの例に示すようにデカルト座標に整列される)に対して、応力σ(MPa単位)に圧電係数πを乗じた積の和であることを示している。この変化は、応力が課されたナノワイヤと応力のかからないナノワイヤとの間の変化を反映している。
δμ20×20=0.5(δμT/B+δμL/R) [2]
Claims (12)
- 第一チャネルと、前記第一チャネルの表面に接する伸張性の第一ゲート誘電体及び伸張性の第一ゲートを含む第一ゲート・スタックとを有するn型FETデバイスであって、前記伸張性の第一ゲート誘電体は第一厚さtG1を有し、前記第一チャネルは、半導体チップの結晶構造の<100>方位に沿った長さl1を有すると共に厚さtC1を有する、前記n型FETデバイスと、
第二チャネルと、前記第二チャネルの表面に接する圧縮性の第二ゲート誘電体及び圧縮性の第二ゲートを含む第二ゲート・スタックとを有するp型FETデバイスであって、前記圧縮性の第二ゲート誘電体は第二厚さtG2を有し、前記第二チャネルは、前記半導体チップの結晶構造の<110>方位に沿った長さl2を有すると共に厚さtC2を有する、前記p型FETデバイスとを備える前記半導体チップであって、
前記第一ゲート・スタックは、前記第一チャネルの長さl1沿いの電荷担体の電気的移動度が、前記<100>方位に依存し引張力によって増大するように、前記第一チャネルの前記表面に前記引張力を作用させ、
前記第二ゲート・スタックは、前記第二チャネルの長さl2沿いの電荷担体の電気的移動度が、前記<110>方位に依存し圧縮力によって増大するように、前記第二チャネルの前記表面に前記圧縮力を作用させ、
前記伸張性の第一ゲート誘電体の第一厚さt G1 /前記第一チャネルの厚さt C1 で表す比率、及び前記圧縮性の第二ゲート誘電体の第二厚さt G2 /前記第二チャネルの前記厚さt C2 で表す比率が、0.8以上である、前記半導体チップ。 - 前記半導体チップ、前記第一チャネル、および前記第二チャネルはシリコンである、請求項1に記載の半導体チップ。
- 前記第一ゲート誘電体の材料が、伸張性オキシ窒化物および酸化ハフニウムからなる群から選択され、
前記第一ゲートの材料が、窒化チタン、窒化タンタル、および伸張性ポリシリコンからなる群から選択される、請求項1に記載の半導体チップ。 - 前記第二ゲート誘電体の材料が、熱酸化物および圧縮性オキシ窒化物からなる群から選択され、
前記第二ゲートの材料がポリシリコンである、請求項1に記載の半導体チップ。 - 前記第一チャネルの厚さtC1及び前記第二チャネルの厚さtC2は、20ナノメータ以下であり、前記第一チャネル及び前記第二チャネルは、ナノワイヤである、請求項1に記載の半導体チップ。
- 前記第一ゲート誘電体が接している前記第一チャネルの表面及び前記第二ゲート誘電体が接している前記第二チャネルの表面が、前記第一及び第二チャネルのそれぞれの断面の外周面の少なくとも50%に亘る、請求項1に記載の半導体チップ。
- 半導体基板上に、n型FETデバイスの第一チャネルであって、前記半導体基板の<100>結晶方位に沿った長さl1を有すると共に厚さtC1を有するナノワイヤの前記第一チャネルを形成するステップと、
前記半導体基板上に、p型FETデバイスの第二チャネルであって、前記半導体基板の<110>結晶方位に沿った長さl2を有すると共に厚さtC2を有するナノワイヤの前記第二チャネルを形成するステップと、
前記ナノワイヤの第一チャネルの表面を覆って、前記ナノワイヤの第一チャネルの前記表面に引張力を課すための伸張性の第一ゲート誘電体及び伸張性の第一ゲートを形成するステップであって、前記伸張性の第一ゲート誘電体は第一厚さtG1を有する、前記ステップと、
前記ナノワイヤの第二チャネルの表面を覆って、前記ナノワイヤの第二チャネルの前記表面に圧縮力を課すための圧縮性の第二ゲート誘電体及び圧縮性の第二ゲートを形成するステップであって、前記圧縮性の第二ゲート誘電体は第二厚さtG2を有する、前記ステップとを含み、
前記<100>結晶方位は、前記引張力が、前記ナノワイヤの第一チャネルの前記長さ沿いの電荷担体の移動度を増大させ、
前記<110>結晶方位は、前記圧縮力が、前記ナノワイヤの第二チャネルの前記長さ沿いの電荷担体の移動度を増大させ、
前記伸張性の第一ゲート誘電体の第一厚さt G1 /前記第一チャネルの厚さt C1 で表す比率、及び前記圧縮性の第二ゲート誘電体の第二厚さt G2 /前記第二チャネルの前記厚さt C2 で表す比率が、0.8以上である、半導体チップの製造方法。 - 前記半導体チップ、前記第一チャネル、および前記第二チャネルはシリコンである、請求項7に記載の方法。
- 前記第一ゲート誘電体の材料が、伸張性オキシ窒化物および酸化ハフニウムからなる群から選択され、
前記第一ゲートの材料が、窒化チタン、窒化タンタル、および伸張性ポリシリコンからなる群から選択される、請求項7に記載の方法。 - 前記第二ゲート誘電体の材料が、熱酸化物および圧縮性オキシ窒化物からなる群から選択され、
前記第二ゲートの材料がポリシリコンである、請求項7に記載の方法。 - 前記第一チャネルの厚さtC1及び前記第二チャネルの厚さtC2は、20ナノメータ以下であり、前記第一チャネル及び前記第二チャネルは、ナノワイヤである、請求項7に記載の方法。
- 前記第一ゲート誘電体が接している前記第一チャネルの表面及び前記第二ゲート誘電体が接している前記第二チャネルの表面が、前記第一及び第二チャネルのそれぞれの断面の外周面の少なくとも50%に亘る、請求項7に記載の方法。
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