JP5717762B2 - 非対称ｐ型電界効果トランジスタおよびこれを形成するための方法 - Google Patents

非対称ｐ型電界効果トランジスタおよびこれを形成するための方法 Download PDF

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Publication number
JP5717762B2
JP5717762B2 JP2012548081A JP2012548081A JP5717762B2 JP 5717762 B2 JP5717762 B2 JP 5717762B2 JP 2012548081 A JP2012548081 A JP 2012548081A JP 2012548081 A JP2012548081 A JP 2012548081A JP 5717762 B2 JP5717762 B2 JP 5717762B2
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implant
source
drain
region
channel
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JP2012548081A
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Japanese (ja)
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JP2013516791A (ja
JP2013516791A5 (https=
Inventor
チャン、ジョセフィン、ビー
チャン、レランド
リン、チャン、スン
スレイト、ジェフリー、ダブリュ
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2012548081A 2010-01-07 2011-01-05 非対称ｐ型電界効果トランジスタおよびこれを形成するための方法 Expired - Fee Related JP5717762B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/683,606 US8426917B2 (en) 2010-01-07 2010-01-07 Body-tied asymmetric P-type field effect transistor
US12/683,606 2010-01-07
PCT/US2011/020164 WO2011084971A1 (en) 2010-01-07 2011-01-05 A body-tied asymmetric p-type field effect transistor

Publications (3)

Publication Number Publication Date
JP2013516791A JP2013516791A (ja) 2013-05-13
JP2013516791A5 JP2013516791A5 (https=) 2014-08-14
JP5717762B2 true JP5717762B2 (ja) 2015-05-13

Family

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JP2012548081A Expired - Fee Related JP5717762B2 (ja) 2010-01-07 2011-01-05 非対称ｐ型電界効果トランジスタおよびこれを形成するための方法

Country Status (5)

Country Link
US (1) US8426917B2 (https=)
EP (1) EP2522027A4 (https=)
JP (1) JP5717762B2 (https=)
CN (1) CN102714161B (https=)
WO (1) WO2011084971A1 (https=)

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US9177968B1 (en) * 2014-09-19 2015-11-03 Silanna Semiconductor U.S.A., Inc. Schottky clamped radio frequency switch
CN104362093B (zh) * 2014-10-14 2017-03-22 中国科学院上海微系统与信息技术研究所 一种soi器件结构及其制作方法
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Also Published As

Publication number Publication date
JP2013516791A (ja) 2013-05-13
US8426917B2 (en) 2013-04-23
WO2011084971A1 (en) 2011-07-14
US20110163379A1 (en) 2011-07-07
EP2522027A1 (en) 2012-11-14
CN102714161A (zh) 2012-10-03
CN102714161B (zh) 2015-05-13
EP2522027A4 (en) 2014-05-28

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