CN102714161B - 体连结不对称p型场效应晶体管 - Google Patents

体连结不对称p型场效应晶体管 Download PDF

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Publication number
CN102714161B
CN102714161B CN201180005601.6A CN201180005601A CN102714161B CN 102714161 B CN102714161 B CN 102714161B CN 201180005601 A CN201180005601 A CN 201180005601A CN 102714161 B CN102714161 B CN 102714161B
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CN
China
Prior art keywords
implant
field effect
asymmetric
type field
effect transistor
Prior art date
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Expired - Fee Related
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CN201180005601.6A
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English (en)
Chinese (zh)
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CN102714161A (zh
Inventor
J·B·常
L·常
C·H·林
J·W·斯莱特
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201180005601.6A 2010-01-07 2011-01-05 体连结不对称p型场效应晶体管 Expired - Fee Related CN102714161B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/683,606 US8426917B2 (en) 2010-01-07 2010-01-07 Body-tied asymmetric P-type field effect transistor
US12/683,606 2010-01-07
PCT/US2011/020164 WO2011084971A1 (en) 2010-01-07 2011-01-05 A body-tied asymmetric p-type field effect transistor

Publications (2)

Publication Number Publication Date
CN102714161A CN102714161A (zh) 2012-10-03
CN102714161B true CN102714161B (zh) 2015-05-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180005601.6A Expired - Fee Related CN102714161B (zh) 2010-01-07 2011-01-05 体连结不对称p型场效应晶体管

Country Status (5)

Country Link
US (1) US8426917B2 (https=)
EP (1) EP2522027A4 (https=)
JP (1) JP5717762B2 (https=)
CN (1) CN102714161B (https=)
WO (1) WO2011084971A1 (https=)

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CN102820228A (zh) * 2011-06-10 2012-12-12 中国科学院微电子研究所 半导体器件的制备方法
CN102420873B (zh) * 2011-12-06 2014-06-11 肇庆全商联盟信息科技有限公司 复合网络全新云应用平台
US8822278B2 (en) * 2012-03-29 2014-09-02 International Business Machines Corporation Asymmetric FET formed through use of variable pitch gate for use as logic device and test structure
US8822295B2 (en) * 2012-04-03 2014-09-02 International Business Machines Corporation Low extension dose implants in SRAM fabrication
US8664072B2 (en) 2012-05-30 2014-03-04 Globalfoundries Inc. Source and drain architecture in an active region of a P-channel transistor by tilted implantation
US9177968B1 (en) * 2014-09-19 2015-11-03 Silanna Semiconductor U.S.A., Inc. Schottky clamped radio frequency switch
CN104362093B (zh) * 2014-10-14 2017-03-22 中国科学院上海微系统与信息技术研究所 一种soi器件结构及其制作方法
CN105990340A (zh) * 2015-01-30 2016-10-05 无锡华润上华半导体有限公司 一种半导体器件
US10283642B1 (en) 2018-04-19 2019-05-07 Globalfoundries Inc. Thin body field effect transistor including a counter-doped channel area and a method of forming the same

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Also Published As

Publication number Publication date
JP2013516791A (ja) 2013-05-13
US8426917B2 (en) 2013-04-23
JP5717762B2 (ja) 2015-05-13
WO2011084971A1 (en) 2011-07-14
US20110163379A1 (en) 2011-07-07
EP2522027A1 (en) 2012-11-14
CN102714161A (zh) 2012-10-03
EP2522027A4 (en) 2014-05-28

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