JP5715698B2 - ピエゾ抵抗センサ・チップ素子を有する圧力センサ - Google Patents

ピエゾ抵抗センサ・チップ素子を有する圧力センサ Download PDF

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JP5715698B2
JP5715698B2 JP2013526291A JP2013526291A JP5715698B2 JP 5715698 B2 JP5715698 B2 JP 5715698B2 JP 2013526291 A JP2013526291 A JP 2013526291A JP 2013526291 A JP2013526291 A JP 2013526291A JP 5715698 B2 JP5715698 B2 JP 5715698B2
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pressure
pressure sensor
adhesive
sensor chip
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Japanese (ja)
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JP2013537967A5 (enExample
JP2013537967A (ja
Inventor
アルビッカー、ウルリッヒ
ソンデレッガー、クリストフ
マイスター、ペーター
ベルク、ヨッヘン フォン
ベルク、ヨッヘン フォン
タネール、レネ
シュネリンガー、ジェフリー、エム．
Original Assignee
キストラー ホールディング アクチエンゲゼルシャフト
キストラー ホールディング アクチエンゲゼルシャフト
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0007—Fluidic connecting means
    • G01L19/0038—Fluidic connecting means being part of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0007—Fluidic connecting means
    • G01L19/0046—Fluidic connecting means using isolation membranes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP2013526291A 2010-09-01 2011-08-29 ピエゾ抵抗センサ・チップ素子を有する圧力センサ Active JP5715698B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US37907210P 2010-09-01 2010-09-01
US61/379,072 2010-09-01
CH1462/10 2010-09-13
CH01462/10A CH703737A1 (de) 2010-09-13 2010-09-13 Drucksensor mit piezoresistivem sensorchip-element.
PCT/CH2011/000196 WO2012027853A1 (de) 2010-09-01 2011-08-29 Drucksensor mit piezoresistivem sensorchip-element

Publications (3)

Publication Number Publication Date
JP2013537967A JP2013537967A (ja) 2013-10-07
JP2013537967A5 JP2013537967A5 (enExample) 2014-10-16
JP5715698B2 true JP5715698B2 (ja) 2015-05-13

Family

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JP2013526291A Active JP5715698B2 (ja) 2010-09-01 2011-08-29 ピエゾ抵抗センサ・チップ素子を有する圧力センサ

Country Status (6)

Country Link
US (1) US8567256B2 (enExample)
EP (1) EP2612125B1 (enExample)
JP (1) JP5715698B2 (enExample)
CN (1) CN103080718B (enExample)
CH (1) CH703737A1 (enExample)
WO (1) WO2012027853A1 (enExample)

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JP5974595B2 (ja) * 2012-04-03 2016-08-23 ミツミ電機株式会社 半導体センサ及びその製造方法
US20150248159A1 (en) * 2013-06-19 2015-09-03 Florida State University Research Foundation, Inc. Piezoresistive sensors and methods
EP2840375A1 (en) * 2013-08-19 2015-02-25 Sensirion AG Device with a micro- or nanoscale structure
TW201511552A (zh) * 2013-09-05 2015-03-16 Hon Hai Prec Ind Co Ltd 相機模組及其組裝方法
EP2871455B1 (en) 2013-11-06 2020-03-04 Invensense, Inc. Pressure sensor
EP3367082A1 (en) 2013-11-06 2018-08-29 Invensense, Inc. Pressure sensor
JP6248009B2 (ja) * 2014-07-31 2017-12-13 日立オートモティブシステムズ株式会社 圧力センサ
EP3076146B1 (en) 2015-04-02 2020-05-06 Invensense, Inc. Pressure sensor
PT3397702T (pt) 2015-12-29 2021-11-18 Univ Do Minho Tinta piezorresistiva, métodos e utilizações da mesma
JP2017134014A (ja) * 2016-01-29 2017-08-03 株式会社鷺宮製作所 圧力センサ
US10247632B2 (en) * 2016-06-23 2019-04-02 Honeywell International Oil filled gage reference side protection
JP6809122B2 (ja) * 2016-10-17 2021-01-06 株式会社デンソー 半導体装置
JP6806901B2 (ja) * 2016-11-30 2021-01-06 キストラー ホールディング アクチエンゲゼルシャフト 力を測定するための測定値ピックアップ
US10890502B2 (en) 2017-09-08 2021-01-12 Fuji Electric Co., Ltd. Pressure sensor device
US11225409B2 (en) 2018-09-17 2022-01-18 Invensense, Inc. Sensor with integrated heater
EP4660601A2 (en) 2019-02-27 2025-12-10 Kistler Holding AG Sensor
US11354161B2 (en) 2020-08-10 2022-06-07 Bank Of America Corporation Controlling memory utilization by a topic in a publish-subscribe environment
US11340828B2 (en) 2020-08-10 2022-05-24 Bank Of America Corporation Restoring messages to a memory utilized by a topic in a publish-subscribe environment
WO2023218189A1 (en) 2022-05-10 2023-11-16 Ramsay Technologies Ltd A sensor device and a method of forming a sensor device
WO2023223021A1 (en) 2022-05-16 2023-11-23 Ramsay Technologies Ltd An item of protective equipment
CN116380330B (zh) * 2023-05-31 2023-10-24 成都凯天电子股份有限公司 一种用于高温的无液体压阻式碳化硅压力传感器

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JPS594868B2 (ja) * 1977-07-01 1984-02-01 株式会社デンソー 半導体装置
JPS61226627A (ja) * 1985-03-30 1986-10-08 Shimadzu Corp 圧力検出器
US4993265A (en) * 1988-03-03 1991-02-19 The Foxboro Company Protected pressure sensor and method of making
JP2762807B2 (ja) * 1991-12-09 1998-06-04 株式会社日立製作所 差圧センサ
US5333505A (en) * 1992-01-13 1994-08-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor pressure sensor for use at high temperature and pressure and method of manufacturing same
JP3114403B2 (ja) * 1992-12-22 2000-12-04 富士電機株式会社 半導体圧力センサ
US5614678A (en) * 1996-02-05 1997-03-25 Kulite Semiconductor Products, Inc. High pressure piezoresistive transducer
JPH09222372A (ja) * 1996-02-19 1997-08-26 Mitsubishi Electric Corp 半導体式センサ
US6076409A (en) * 1997-12-22 2000-06-20 Rosemount Aerospace, Inc. Media compatible packages for pressure sensing devices
JP2001208627A (ja) * 2000-01-24 2001-08-03 Saginomiya Seisakusho Inc 半導体圧力検出装置
JP2002082009A (ja) * 2000-06-30 2002-03-22 Denso Corp 圧力センサ
DE10107813A1 (de) * 2001-02-20 2002-09-05 Bosch Gmbh Robert Drucksensormodul
US6543292B1 (en) * 2001-03-29 2003-04-08 Rockwell Collins, Inc. Piezoresistive air pressure sensor
JP2002350260A (ja) * 2001-05-28 2002-12-04 Matsushita Electric Works Ltd 半導体圧力センサ
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JP2004361208A (ja) * 2003-06-04 2004-12-24 Hitachi Unisia Automotive Ltd 圧力センサ
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Also Published As

Publication number Publication date
WO2012027853A1 (de) 2012-03-08
US8567256B2 (en) 2013-10-29
CH703737A1 (de) 2012-03-15
JP2013537967A (ja) 2013-10-07
EP2612125A1 (de) 2013-07-10
CN103080718A (zh) 2013-05-01
EP2612125B1 (de) 2015-01-14
CN103080718B (zh) 2015-02-11
US20130167650A1 (en) 2013-07-04

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