JP5714250B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5714250B2
JP5714250B2 JP2010160119A JP2010160119A JP5714250B2 JP 5714250 B2 JP5714250 B2 JP 5714250B2 JP 2010160119 A JP2010160119 A JP 2010160119A JP 2010160119 A JP2010160119 A JP 2010160119A JP 5714250 B2 JP5714250 B2 JP 5714250B2
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layer
gas
recess
semiconductor device
etching
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JP2010160119A
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Japanese (ja)
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JP2012023213A5 (enExample
JP2012023213A (ja
Inventor
政俊 小山
政俊 小山
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2010160119A priority Critical patent/JP5714250B2/ja
Priority to US13/182,124 priority patent/US8896025B2/en
Publication of JP2012023213A publication Critical patent/JP2012023213A/ja
Publication of JP2012023213A5 publication Critical patent/JP2012023213A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2010160119A 2010-07-14 2010-07-14 半導体装置の製造方法 Active JP5714250B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010160119A JP5714250B2 (ja) 2010-07-14 2010-07-14 半導体装置の製造方法
US13/182,124 US8896025B2 (en) 2010-07-14 2011-07-13 Method for fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010160119A JP5714250B2 (ja) 2010-07-14 2010-07-14 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2012023213A JP2012023213A (ja) 2012-02-02
JP2012023213A5 JP2012023213A5 (enExample) 2013-08-29
JP5714250B2 true JP5714250B2 (ja) 2015-05-07

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JP2010160119A Active JP5714250B2 (ja) 2010-07-14 2010-07-14 半導体装置の製造方法

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US (1) US8896025B2 (enExample)
JP (1) JP5714250B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6198039B2 (ja) 2013-04-12 2017-09-20 住友電工デバイス・イノベーション株式会社 半導体装置
CN103996706A (zh) * 2014-04-16 2014-08-20 中国科学院半导体研究所 氮化镓基晶体管及其制备方法
US10932684B2 (en) * 2016-03-10 2021-03-02 Epitronic Holdings Pte Ltd. Microelectronic sensor for air quality monitoring
JP6629252B2 (ja) * 2017-02-01 2020-01-15 株式会社東芝 半導体装置の製造方法
US10096550B2 (en) 2017-02-21 2018-10-09 Raytheon Company Nitride structure having gold-free contact and methods for forming such structures
US10224285B2 (en) 2017-02-21 2019-03-05 Raytheon Company Nitride structure having gold-free contact and methods for forming such structures
KR101914707B1 (ko) * 2017-03-20 2018-11-05 전남대학교산학협력단 고성능 저전력 전계효과 트랜지스터 소자 및 이의 제조방법
WO2019009111A1 (ja) * 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
RU2696825C1 (ru) * 2018-12-14 2019-08-06 Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" (ТУСУР) Способ изготовления омического контакта к AlGaN/GaN
JP7739818B2 (ja) * 2021-07-29 2025-09-17 住友電気工業株式会社 半導体装置の製造方法
CN114242583B (zh) * 2021-12-22 2023-03-21 江苏第三代半导体研究院有限公司 AlGaN材料的刻蚀方法及其应用

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124188A (ja) * 2001-10-10 2003-04-25 Matsushita Electric Ind Co Ltd ＧａＮ系半導体デバイスの製造方法
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
US20090029353A1 (en) 2003-12-08 2009-01-29 Maki Wusi C Molecular detector
WO2005069388A1 (ja) * 2004-01-20 2005-07-28 Nichia Corporation 半導体発光素子
JP5216184B2 (ja) * 2004-12-07 2013-06-19 富士通株式会社 化合物半導体装置およびその製造方法
JP4597653B2 (ja) 2004-12-16 2010-12-15 住友電工デバイス・イノベーション株式会社 半導体装置、それを備える半導体モジュールおよび半導体装置の製造方法。
JP2007273844A (ja) * 2006-03-31 2007-10-18 Matsushita Electric Ind Co Ltd 半導体素子
JP5126875B2 (ja) * 2006-08-11 2013-01-23 シャープ株式会社 窒化物半導体発光素子の製造方法
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5462161B2 (ja) * 2007-07-20 2014-04-02 アイメック Ｉｉｉ−ｖ族ｍｅｓｆｅｔでのダマシンコンタクト製造方法
JP2009194081A (ja) * 2008-02-13 2009-08-27 New Japan Radio Co Ltd 窒化物半導体装置の製造方法

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JP2012023213A (ja) 2012-02-02
US8896025B2 (en) 2014-11-25
US20120015513A1 (en) 2012-01-19

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