JP5707634B2 - トンネル電流回路 - Google Patents
トンネル電流回路 Download PDFInfo
- Publication number
- JP5707634B2 JP5707634B2 JP2011130765A JP2011130765A JP5707634B2 JP 5707634 B2 JP5707634 B2 JP 5707634B2 JP 2011130765 A JP2011130765 A JP 2011130765A JP 2011130765 A JP2011130765 A JP 2011130765A JP 5707634 B2 JP5707634 B2 JP 5707634B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- current
- gate
- tunnel current
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000005641 tunneling Effects 0.000 claims description 8
- 230000003321 amplification Effects 0.000 claims 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims 2
- 239000000872 buffer Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011130765A JP5707634B2 (ja) | 2011-06-12 | 2011-06-12 | トンネル電流回路 |
| US13/261,789 US20140197815A1 (en) | 2011-06-12 | 2012-05-21 | Tunneling current circuit |
| PCT/JP2012/062894 WO2012172927A1 (ja) | 2011-06-12 | 2012-05-21 | トンネル電流回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011130765A JP5707634B2 (ja) | 2011-06-12 | 2011-06-12 | トンネル電流回路 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013003615A JP2013003615A (ja) | 2013-01-07 |
| JP2013003615A5 JP2013003615A5 (enExample) | 2014-01-23 |
| JP5707634B2 true JP5707634B2 (ja) | 2015-04-30 |
Family
ID=47356921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011130765A Expired - Fee Related JP5707634B2 (ja) | 2011-06-12 | 2011-06-12 | トンネル電流回路 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20140197815A1 (enExample) |
| JP (1) | JP5707634B2 (enExample) |
| WO (1) | WO2012172927A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2567642B (en) * | 2017-10-17 | 2020-08-26 | Crypto Quantique Ltd | Unique identifiers based on quantum effects |
| US11349446B2 (en) * | 2020-03-10 | 2022-05-31 | SiliconIntervention Inc. | Amplifier bias control using tunneling current |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3588672A (en) * | 1968-02-08 | 1971-06-28 | Tektronix Inc | Current regulator controlled by voltage across semiconductor junction device |
| US5384530A (en) * | 1992-08-06 | 1995-01-24 | Massachusetts Institute Of Technology | Bootstrap voltage reference circuit utilizing an N-type negative resistance device |
| JPH0779154A (ja) * | 1993-06-30 | 1995-03-20 | Toshiba Corp | 一電子トンネル素子を用いたインバータ |
| JP4194237B2 (ja) * | 1999-12-28 | 2008-12-10 | 株式会社リコー | 電界効果トランジスタを用いた電圧発生回路及び基準電圧源回路 |
| JP2002064150A (ja) * | 2000-06-05 | 2002-02-28 | Mitsubishi Electric Corp | 半導体装置 |
| US6384586B1 (en) * | 2000-12-08 | 2002-05-07 | Nec Electronics, Inc. | Regulated low-voltage generation circuit |
| JP2004085526A (ja) * | 2001-12-05 | 2004-03-18 | Renesas Technology Corp | 半導体装置 |
| US20030107431A1 (en) * | 2001-12-10 | 2003-06-12 | Tang Stephen H. | Balancing gate-leakage current in differential pair circuits |
| US6989659B2 (en) * | 2002-09-09 | 2006-01-24 | Acutechnology Semiconductor | Low dropout voltage regulator using a depletion pass transistor |
| JP4052923B2 (ja) * | 2002-10-25 | 2008-02-27 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP2005204297A (ja) * | 2003-12-18 | 2005-07-28 | Matsushita Electric Ind Co Ltd | バイアス回路を搭載した増幅装置 |
| US7498869B2 (en) * | 2007-01-15 | 2009-03-03 | International Business Machines Corporation | Voltage reference circuit for low voltage applications in an integrated circuit |
| JP4726885B2 (ja) * | 2007-11-30 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 半導体回路装置 |
| JP5640636B2 (ja) * | 2010-10-20 | 2014-12-17 | 光俊 菅原 | 基準電圧発生回路 |
-
2011
- 2011-06-12 JP JP2011130765A patent/JP5707634B2/ja not_active Expired - Fee Related
-
2012
- 2012-05-21 US US13/261,789 patent/US20140197815A1/en not_active Abandoned
- 2012-05-21 WO PCT/JP2012/062894 patent/WO2012172927A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013003615A (ja) | 2013-01-07 |
| US20140197815A1 (en) | 2014-07-17 |
| WO2012172927A1 (ja) | 2012-12-20 |
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