JP5705495B2 - プラズマの処理方法及びプラズマ処理装置 - Google Patents

プラズマの処理方法及びプラズマ処理装置 Download PDF

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Publication number
JP5705495B2
JP5705495B2 JP2010227640A JP2010227640A JP5705495B2 JP 5705495 B2 JP5705495 B2 JP 5705495B2 JP 2010227640 A JP2010227640 A JP 2010227640A JP 2010227640 A JP2010227640 A JP 2010227640A JP 5705495 B2 JP5705495 B2 JP 5705495B2
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Japan
Prior art keywords
discharge
carbon
plasma
plasma processing
gas
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JP2010227640A
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Japanese (ja)
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JP2012084600A5 (cg-RX-API-DMAC7.html
JP2012084600A (ja
Inventor
侯然 廣田
侯然 廣田
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2010227640A priority Critical patent/JP5705495B2/ja
Priority to TW099144758A priority patent/TWI416626B/zh
Priority to US13/008,993 priority patent/US8500912B2/en
Priority to KR1020110006220A priority patent/KR101285750B1/ko
Publication of JP2012084600A publication Critical patent/JP2012084600A/ja
Publication of JP2012084600A5 publication Critical patent/JP2012084600A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010227640A 2010-10-07 2010-10-07 プラズマの処理方法及びプラズマ処理装置 Expired - Fee Related JP5705495B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010227640A JP5705495B2 (ja) 2010-10-07 2010-10-07 プラズマの処理方法及びプラズマ処理装置
TW099144758A TWI416626B (zh) 2010-10-07 2010-12-20 A plasma processing method and a plasma processing apparatus
US13/008,993 US8500912B2 (en) 2010-10-07 2011-01-19 Plasma processing method and plasma processing apparatus
KR1020110006220A KR101285750B1 (ko) 2010-10-07 2011-01-21 플라즈마의 처리방법 및 플라즈마 처리장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010227640A JP5705495B2 (ja) 2010-10-07 2010-10-07 プラズマの処理方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2012084600A JP2012084600A (ja) 2012-04-26
JP2012084600A5 JP2012084600A5 (cg-RX-API-DMAC7.html) 2013-11-07
JP5705495B2 true JP5705495B2 (ja) 2015-04-22

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JP2010227640A Expired - Fee Related JP5705495B2 (ja) 2010-10-07 2010-10-07 プラズマの処理方法及びプラズマ処理装置

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US (1) US8500912B2 (cg-RX-API-DMAC7.html)
JP (1) JP5705495B2 (cg-RX-API-DMAC7.html)
KR (1) KR101285750B1 (cg-RX-API-DMAC7.html)
TW (1) TWI416626B (cg-RX-API-DMAC7.html)

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US8039052B2 (en) * 2007-09-06 2011-10-18 Intermolecular, Inc. Multi-region processing system and heads
JP5982223B2 (ja) 2012-08-27 2016-08-31 東京エレクトロン株式会社 プラズマ処理方法、及びプラズマ処理装置
US9243956B2 (en) 2013-01-21 2016-01-26 Sciaps, Inc. Automated multiple location sampling analysis system
US9267842B2 (en) 2013-01-21 2016-02-23 Sciaps, Inc. Automated focusing, cleaning, and multiple location sampling spectrometer system
US9952100B2 (en) 2013-01-21 2018-04-24 Sciaps, Inc. Handheld LIBS spectrometer
US9435742B2 (en) * 2013-01-21 2016-09-06 Sciaps, Inc. Automated plasma cleaning system
WO2014113824A2 (en) 2013-01-21 2014-07-24 Sciaps, Inc. Handheld libs spectrometer
JP6177601B2 (ja) * 2013-06-25 2017-08-09 東京エレクトロン株式会社 クリーニング方法及び基板処理装置
DE102013014147B4 (de) * 2013-08-23 2017-02-16 Centrotherm Photovoltaics Ag Verfahren und vorrichtung zum detektieren einer plasmazündung
JP6284786B2 (ja) * 2014-02-27 2018-02-28 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法
US10375901B2 (en) 2014-12-09 2019-08-13 Mtd Products Inc Blower/vacuum
US9664565B2 (en) 2015-02-26 2017-05-30 Sciaps, Inc. LIBS analyzer sample presence detection system and method
US9651424B2 (en) 2015-02-26 2017-05-16 Sciaps, Inc. LIBS analyzer sample presence detection system and method
US10209196B2 (en) 2015-10-05 2019-02-19 Sciaps, Inc. LIBS analysis system and method for liquids
US9939383B2 (en) 2016-02-05 2018-04-10 Sciaps, Inc. Analyzer alignment, sample detection, localization, and focusing method and system
KR102490700B1 (ko) * 2017-03-27 2023-01-26 주식회사 히타치하이테크 플라스마 처리 방법
JP7078792B2 (ja) 2020-02-10 2022-05-31 株式会社日立ハイテク プラズマ処理方法
CN120749022A (zh) * 2025-06-17 2025-10-03 北京集成电路装备创新中心有限公司 一种半导体器件的刻蚀方法

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JP3117187B2 (ja) * 1995-12-20 2000-12-11 株式会社日立製作所 プラズマクリーニング処理方法
WO1998033362A1 (en) * 1997-01-29 1998-07-30 Tadahiro Ohmi Plasma device
JPH11140675A (ja) 1997-11-14 1999-05-25 Sony Corp 真空チャンバーのクリーニング方法
JP2001176843A (ja) 1999-12-21 2001-06-29 Nec Kyushu Ltd ドライクリーニング方法
JP3639795B2 (ja) * 2000-03-13 2005-04-20 キヤノン株式会社 薄膜の製造方法
JP2003064476A (ja) * 2001-08-23 2003-03-05 Canon Inc 堆積膜形成装置のクリーニング処理方法
JP2003197615A (ja) * 2001-12-26 2003-07-11 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法
US6811936B2 (en) * 2002-12-31 2004-11-02 Freescale Semiconductor Inc. Structure and process for a pellicle membrane for 157 nanometer lithography
JP4143505B2 (ja) * 2003-09-03 2008-09-03 株式会社半導体理工学研究センター Ｍｏｓ型半導体装置及びその製造方法
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JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP4776959B2 (ja) * 2005-03-28 2011-09-21 国立大学法人名古屋大学 撥水処理方法
JP2007173558A (ja) * 2005-12-22 2007-07-05 Renesas Technology Corp 半導体集積回路装置の製造方法
KR100753158B1 (ko) * 2006-06-19 2007-08-30 삼성전자주식회사 공정 챔버의 세정 방법
US20100006976A1 (en) * 2007-03-19 2010-01-14 Ippei Kume Semiconductor device and manufacturing method thereof
JP2008244292A (ja) * 2007-03-28 2008-10-09 Hitachi High-Technologies Corp プラズマ処理装置の処理性能安定化方法
JP5364978B2 (ja) * 2007-03-28 2013-12-11 富士通セミコンダクター株式会社 表面改質カーボンナノチューブ系材料、その製造方法、電子部材および電子装置
JP2009159111A (ja) * 2007-12-25 2009-07-16 Sanyo Electric Co Ltd レベルシフト回路
JP5665289B2 (ja) * 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5358165B2 (ja) * 2008-11-26 2013-12-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP2010198659A (ja) * 2009-02-23 2010-09-09 Showa Denko Kk 処理装置、インライン式成膜装置、磁気記録媒体の製造方法

Also Published As

Publication number Publication date
US8500912B2 (en) 2013-08-06
TW201216355A (en) 2012-04-16
TWI416626B (zh) 2013-11-21
KR101285750B1 (ko) 2013-07-18
US20120085366A1 (en) 2012-04-12
KR20120036245A (ko) 2012-04-17
JP2012084600A (ja) 2012-04-26

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