JP5364978B2 - 表面改質カーボンナノチューブ系材料、その製造方法、電子部材および電子装置 - Google Patents
表面改質カーボンナノチューブ系材料、その製造方法、電子部材および電子装置 Download PDFInfo
- Publication number
- JP5364978B2 JP5364978B2 JP2007083836A JP2007083836A JP5364978B2 JP 5364978 B2 JP5364978 B2 JP 5364978B2 JP 2007083836 A JP2007083836 A JP 2007083836A JP 2007083836 A JP2007083836 A JP 2007083836A JP 5364978 B2 JP5364978 B2 JP 5364978B2
- Authority
- JP
- Japan
- Prior art keywords
- cnt
- substance
- based material
- silicon
- carbon nanotube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
- C01B32/174—Derivatisation; Solubilisation; Dispersion in solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
- H10K85/225—Carbon nanotubes comprising substituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/06—Multi-walled nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/26—Mechanical properties
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/34—Length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
−OH、−COOH、−NH2、−NR2(Rは脂肪族、芳香族アルキル基あるいはその誘導体)、−CO−、−C=O、イミド結合およびエーテル結合の少なくともいずれか一つ以上を有する物質、すなわち、アルコールおよびフェノール、カルボン酸、アミン類、ケトン類およびキノン類、等。
基板として、Siウエハ{p型、(100)面}上に、Niをスパッタリングにて25nm形成したものを用い、熱CVD法により、アセチレンガスを原料として、650℃にて、マルチウオールCNTを長さ約3μmまで成長させた。ナノチューブの面密度を測定したところ、約5×1011本/cm2であった。
実施例1と同様の特定物質を使用し、試料としては、Siウエハ{p型、(100)面}上にシングルウオールCNTをアーク放電法で生成させたものを使用した。
直径0.5μm、深さ1μmの円筒状の穴パターンをSi基板上に形成し、この穴のパタンの底部を含むウエハ全面にTi薄膜10nmをスパッタリングで形成し、平均粒径10nmのNi微粒子を穴のパタンの底部を含むウエハ全面に散布し、これに熱CVD法で長さ1500nmのマルチウオールCNTを穴の上方まで成長させた。ナノチューブの面密度を測定したところ、約3×1011本/cm2であった。
Si基板上に、ウエハ全面にTi薄膜10nmをスパッタリングで形成し、その後、平均粒径10nmのNi微粒子をウエハ全面に散布し、レジストを用いて、2μm×5μmの矩形パターンを光リソグラフィでパターニングしてから現像し、2μm×5μmの矩形パターン状にNi微粒子を残したものを準備した。
Si基板のウエハ全面にTi薄膜10nmをスパッタリングで形成し、その後、平均粒径10nmのNi微粒子をウエハ全面に散布し、レジストを用いて、2μm×5μmの矩形パターンを光リソグラフィでパターニングしてから現像し、2μm×5μmの矩形パターン状にNi微粒子を残したものを準備した。
Si基板上の、底面を含むウエハ全面にTi薄膜10nmをスパッタリングで形成し、その後、平均粒径10nmのNi微粒子をウエハ全面に散布したものを準備した。
紫外線照射と当該カーボンナノチューブ系材料への含ケイ素化合物の供給とを組合せることを含む、
表面改質されたカーボンナノチューブ系材料の製造方法。
2 下地層
3 Cu配線層
4 Ta膜
5 絶縁層
6 Ti膜
7 触媒金属膜
8 CNT
9 充填樹脂
21 紫外線源
22 特定物質を不活性物質で希釈したガス
23 供給経路
24 吹き出し口
25 冷却用媒体
26 CNTの束
27 基板
31 水冷ダクト
41 シリコン基板
42 トランジスタ
43a〜43f
層間絶縁膜
45 配線
46 ビア
47 コンタクト
48 保護層
51 基板
52 電極
53 触媒金属担持膜と触媒金属膜
54 CNT
Claims (4)
- 表面の改質されたカーボンナノチューブ系材料の製造方法において、カーボンナノチューブ系材料に対し、
紫外線照射と当該カーボンナノチューブ系材料への含ケイ素化合物の供給とを組合せて同時に行うことを含み、
前記紫外線が真空紫外線である、
表面改質されたカーボンナノチューブ系材料の製造方法。 - 前記含ケイ素化合物が前記紫外線を照射しても、前記カーボンナノチューブ系材料の表面を改質しない不活性物質で希釈されたものである、請求項1に記載のカーボンナノチューブ系材料の製造方法。
- 前記表面改質カーボンナノチューブ系材料が、含ケイ素基と含ケイ素化合物との少なくともいずれか一方で表面を改質されたものである、請求項1または2に記載のカーボンナノチューブ系材料の製造方法。
- 前記含ケイ素化合物が、炭化水素類、酸素、アミン類、ハロゲン化アルキル類、アルコール類、エーテル類およびこれらの混合物からなる群から選ばれた少なくとも一つの物質と共に供給される、請求項1〜3のいずれか1項に記載のカーボンナノチューブ系材料の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007083836A JP5364978B2 (ja) | 2007-03-28 | 2007-03-28 | 表面改質カーボンナノチューブ系材料、その製造方法、電子部材および電子装置 |
EP08152545.3A EP1976041B1 (en) | 2007-03-28 | 2008-03-10 | Manufacturing method for surface modified carbon nanotube material |
US12/052,265 US8273318B2 (en) | 2007-03-28 | 2008-03-20 | Surface modifying carbon nanotube material, manufacturing method therefor, electronic component and electronic device |
KR1020080027908A KR101050128B1 (ko) | 2007-03-28 | 2008-03-26 | 표면 개질 카본 나노튜브계 재료, 그 제조 방법, 전자 부재및 전자 장치 |
CN2008100903173A CN101274757B (zh) | 2007-03-28 | 2008-03-28 | 表面修饰的碳纳米管材料及其制造方法和电子部件与电子器件 |
US13/593,297 US20120323031A1 (en) | 2007-03-28 | 2012-08-23 | Surface modifying carbon nanotube material, manufacturing method therefor, electronic component and electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007083836A JP5364978B2 (ja) | 2007-03-28 | 2007-03-28 | 表面改質カーボンナノチューブ系材料、その製造方法、電子部材および電子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008239422A JP2008239422A (ja) | 2008-10-09 |
JP5364978B2 true JP5364978B2 (ja) | 2013-12-11 |
Family
ID=39591142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007083836A Expired - Fee Related JP5364978B2 (ja) | 2007-03-28 | 2007-03-28 | 表面改質カーボンナノチューブ系材料、その製造方法、電子部材および電子装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8273318B2 (ja) |
EP (1) | EP1976041B1 (ja) |
JP (1) | JP5364978B2 (ja) |
KR (1) | KR101050128B1 (ja) |
CN (1) | CN101274757B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11652196B2 (en) | 2019-10-15 | 2023-05-16 | Samsung Electronics Co., Ltd. | Display module and manufacturing method thereof |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8257678B2 (en) | 2009-07-31 | 2012-09-04 | Massachusetts Institute Of Technology | Systems and methods related to the formation of carbon-based nanostructures |
WO2011066288A2 (en) * | 2009-11-25 | 2011-06-03 | Massachusetts Institute Of Technology | Systems and methods for enhancing growth of carbon-based nanostructures |
JP5705495B2 (ja) * | 2010-10-07 | 2015-04-22 | 株式会社日立ハイテクノロジーズ | プラズマの処理方法及びプラズマ処理装置 |
WO2012091789A1 (en) | 2010-10-28 | 2012-07-05 | Massachusetts Institute Of Technology | Carbon-based nanostructure formation using large scale active growth structures |
JP6015009B2 (ja) * | 2012-01-25 | 2016-10-26 | 富士通株式会社 | 電子装置及びその製造方法 |
CN103094125A (zh) * | 2013-01-16 | 2013-05-08 | 电子科技大学 | 一种碳纳米管散热结构与电子器件的集成方法 |
ES2663666T3 (es) | 2013-02-28 | 2018-04-16 | N12 Technologies, Inc. | Dispensación basada en cartucho de películas de nanoestructura |
US10084184B2 (en) * | 2013-04-02 | 2018-09-25 | The Regents Of The University Of California | Conformal coating of nano-porous material with group IV semiconductor using nanoparticle ink |
EP3157081B1 (en) * | 2014-06-13 | 2020-08-05 | LG Chem, Ltd. | Silicon-carbon composite, negative electrode comprising same, secondary battery using silicon-carbon composite, and method for preparing silicon-carbon composite |
TWM519879U (zh) * | 2015-08-03 | 2016-04-01 | Dowton Electronic Materials Co Ltd | 電子裝置之改良散熱結構 |
EP3398906A4 (en) * | 2015-12-28 | 2019-10-23 | Hitachi Zosen Corporation | CARBON NANOTUBE JUNCTION SHEET AND PROCESS FOR PRODUCTION THEREOF OF CARBON NANOTUBE JUNCTION SHEET |
CN108473312B (zh) | 2015-12-28 | 2022-02-15 | 日立造船株式会社 | 碳纳米管复合材料以及碳纳米管复合材料的制造方法 |
WO2017192096A1 (en) * | 2016-05-06 | 2017-11-09 | Smoltek Ab | Assembly platform |
CN106449486B (zh) * | 2016-10-27 | 2023-07-21 | 杭州电子科技大学 | 一种制备可控硅表面纳米结构的电磁耦合装置 |
CN108866496B (zh) * | 2017-11-28 | 2020-01-03 | 中国科学院金属研究所 | 抗辐照损伤金属纳米晶/碳纳米管复合材料及其制备方法 |
CN108314009B (zh) * | 2018-03-30 | 2020-11-20 | 烯湾科城(广州)新材料有限公司 | 碳纳米管阵列的表面修饰方法 |
KR102352971B1 (ko) * | 2019-07-10 | 2022-01-21 | 한국생산기술연구원 | 금속산화물 나노복합체의 제조방법 |
CN110845947B (zh) * | 2019-11-26 | 2021-06-22 | 苏州太湖电工新材料股份有限公司 | 一种导热绝缘漆及其制备方法 |
US20230278873A1 (en) * | 2022-03-04 | 2023-09-07 | Nabors Energy Transition Solutions Llc | Silicon dioxide doped carbon-based nanomaterial and methods of forming the same |
CN116038551B (zh) * | 2023-01-10 | 2023-12-29 | 燕山大学 | 光化学机械研磨方法及光敏活性研磨液 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000516708A (ja) | 1996-08-08 | 2000-12-12 | ウィリアム・マーシュ・ライス・ユニバーシティ | ナノチューブ組立体から作製された巨視的操作可能なナノ規模の装置 |
US7084507B2 (en) * | 2001-05-02 | 2006-08-01 | Fujitsu Limited | Integrated circuit device and method of producing the same |
JP4212258B2 (ja) | 2001-05-02 | 2009-01-21 | 富士通株式会社 | 集積回路装置及び集積回路装置製造方法 |
KR20050026580A (ko) | 2003-09-09 | 2005-03-15 | 학교법인 한양학원 | 탄소 나노튜브의 후처리방법 및 이를 이용한 탄소나노튜브 제조방법 |
JP3837567B2 (ja) | 2004-01-16 | 2006-10-25 | 独立行政法人産業技術総合研究所 | カーボンナノチューブおよびその製造方法 |
DE102004026576A1 (de) * | 2004-06-01 | 2005-12-29 | Infineon Technologies Ag | Silanisierte Kohlenstoff-Nanoröhren und Verfahren zur Herstellung derselben |
JP2006240915A (ja) * | 2005-03-02 | 2006-09-14 | Aisan Ind Co Ltd | 粉末粒子、粉末粒子の製造方法、粉末粒子の製造装置 |
US7754054B2 (en) * | 2005-03-11 | 2010-07-13 | New Jersey Institute Of Technology | Microwave induced functionalization of single wall carbon nanotubes and composites prepared therefrom |
CN100367480C (zh) * | 2005-03-17 | 2008-02-06 | 上海交通大学 | 由碳纳米管构成沟道的多沟道场效应晶体管的制造方法 |
JP2007083836A (ja) | 2005-09-21 | 2007-04-05 | Taihei Sangyo:Kk | 椅子用キャスター支持装置及び椅子 |
-
2007
- 2007-03-28 JP JP2007083836A patent/JP5364978B2/ja not_active Expired - Fee Related
-
2008
- 2008-03-10 EP EP08152545.3A patent/EP1976041B1/en not_active Expired - Fee Related
- 2008-03-20 US US12/052,265 patent/US8273318B2/en not_active Expired - Fee Related
- 2008-03-26 KR KR1020080027908A patent/KR101050128B1/ko active IP Right Grant
- 2008-03-28 CN CN2008100903173A patent/CN101274757B/zh not_active Expired - Fee Related
-
2012
- 2012-08-23 US US13/593,297 patent/US20120323031A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11652196B2 (en) | 2019-10-15 | 2023-05-16 | Samsung Electronics Co., Ltd. | Display module and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR20080088431A (ko) | 2008-10-02 |
JP2008239422A (ja) | 2008-10-09 |
US20120323031A1 (en) | 2012-12-20 |
EP1976041A2 (en) | 2008-10-01 |
EP1976041B1 (en) | 2015-09-30 |
CN101274757B (zh) | 2011-04-06 |
KR101050128B1 (ko) | 2011-07-19 |
US8273318B2 (en) | 2012-09-25 |
EP1976041A3 (en) | 2011-09-14 |
US20080241047A1 (en) | 2008-10-02 |
CN101274757A (zh) | 2008-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5364978B2 (ja) | 表面改質カーボンナノチューブ系材料、その製造方法、電子部材および電子装置 | |
WO2008026304A1 (en) | Carbon nanomaterial, method for producing the same, electronic member and electronic device | |
Brady et al. | Polyfluorene-sorted, carbon nanotube array field-effect transistors with increased current density and high on/off ratio | |
Choi et al. | Plasma treatments to improve metal contacts in graphene field effect transistor | |
JP5612033B2 (ja) | ナノ構造体生成方法および装置 | |
US8617650B2 (en) | Synthesis of aligned carbon nanotubes on double-sided metallic substrate by chemical vapor depositon | |
JP5920808B2 (ja) | 配線パターンの形成方法 | |
WO2004106223A1 (ja) | カーボンナノチューブデバイスおよびその製造方法、並びに、カーボンナノチューブ転写体 | |
KR20100108503A (ko) | 전자 디바이스 및 그 제조 방법 | |
US8541058B2 (en) | Palladium thiolate bonding of carbon nanotubes | |
Chand et al. | Scalable Production of Ultrathin Boron Nanosheets from a Low‐Cost Precursor | |
Lu et al. | Single-step direct growth of graphene on Cu ink toward flexible hybrid electronic applications by plasma-enhanced chemical vapor deposition | |
Lin et al. | Applications of carbon nanomaterials as electrical interconnects and thermal interface materials | |
Shi et al. | Molecular level controlled fabrication of highly transparent conductive reduced graphene oxide/silver nanowire hybrid films | |
US9346679B2 (en) | Method for enhancing growth of carbon nanotubes | |
Jeong et al. | Electron‐transfer transparency of graphene: Fast reduction of metal ions on graphene‐covered donor surfaces | |
Bahru et al. | Enhancement of thermal interface material properties using carbon nanotubes through simple electrophoretic deposition method | |
Kumar et al. | Vanishing hysteresis in carbon nanotube transistors embedded in boron nitride/polytetrafluoroethylene heterolayers | |
WO2023042210A1 (en) | Graphene coated metallic surfaces, devices and method of manufacture thereof | |
JPWO2014098158A1 (ja) | 膜形成方法、導電膜、及び絶縁膜 | |
KR102218068B1 (ko) | 유연기판을 갖는 그래핀 적층체, 그의 제조방법 및 그를 포함하는 유기전자소자 | |
Chen et al. | A self-assembled synthesis of carbon nanotubes for interconnects | |
Zhang et al. | Fabrication of high thermal conductivity carbon nanotube arrays by self assembled Fe3O4 particles | |
TWI394305B (zh) | 有機薄膜電晶體之製備方法以及有機薄膜電晶體之閘極介電層表面處理方法 | |
Huang et al. | The Significant Role of Hydrophilic and Hydrophobic Interfaces in Graphene‐Based 1D Heterostructures for Highly Enhanced Electron Emission |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20090121 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091130 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120126 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120327 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130305 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130426 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130813 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130826 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5364978 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |