JP2012084600A5 - - Google Patents
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- Publication number
- JP2012084600A5 JP2012084600A5 JP2010227640A JP2010227640A JP2012084600A5 JP 2012084600 A5 JP2012084600 A5 JP 2012084600A5 JP 2010227640 A JP2010227640 A JP 2010227640A JP 2010227640 A JP2010227640 A JP 2010227640A JP 2012084600 A5 JP2012084600 A5 JP 2012084600A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma processing
- discharge
- plasma
- carbon
- processing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003672 processing method Methods 0.000 claims 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 19
- 229910052799 carbon Inorganic materials 0.000 claims 19
- 239000007789 gas Substances 0.000 claims 18
- 238000000151 deposition Methods 0.000 claims 16
- 230000008021 deposition Effects 0.000 claims 13
- 238000000034 method Methods 0.000 claims 13
- 239000000460 chlorine Substances 0.000 claims 11
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 10
- 229910052801 chlorine Inorganic materials 0.000 claims 10
- 239000007795 chemical reaction product Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 238000001514 detection method Methods 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 230000002123 temporal effect Effects 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010227640A JP5705495B2 (ja) | 2010-10-07 | 2010-10-07 | プラズマの処理方法及びプラズマ処理装置 |
| TW099144758A TWI416626B (zh) | 2010-10-07 | 2010-12-20 | A plasma processing method and a plasma processing apparatus |
| US13/008,993 US8500912B2 (en) | 2010-10-07 | 2011-01-19 | Plasma processing method and plasma processing apparatus |
| KR1020110006220A KR101285750B1 (ko) | 2010-10-07 | 2011-01-21 | 플라즈마의 처리방법 및 플라즈마 처리장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010227640A JP5705495B2 (ja) | 2010-10-07 | 2010-10-07 | プラズマの処理方法及びプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012084600A JP2012084600A (ja) | 2012-04-26 |
| JP2012084600A5 true JP2012084600A5 (cg-RX-API-DMAC7.html) | 2013-11-07 |
| JP5705495B2 JP5705495B2 (ja) | 2015-04-22 |
Family
ID=45924156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010227640A Expired - Fee Related JP5705495B2 (ja) | 2010-10-07 | 2010-10-07 | プラズマの処理方法及びプラズマ処理装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8500912B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5705495B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101285750B1 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI416626B (cg-RX-API-DMAC7.html) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8039052B2 (en) * | 2007-09-06 | 2011-10-18 | Intermolecular, Inc. | Multi-region processing system and heads |
| JP5982223B2 (ja) | 2012-08-27 | 2016-08-31 | 東京エレクトロン株式会社 | プラズマ処理方法、及びプラズマ処理装置 |
| US9243956B2 (en) | 2013-01-21 | 2016-01-26 | Sciaps, Inc. | Automated multiple location sampling analysis system |
| US9267842B2 (en) | 2013-01-21 | 2016-02-23 | Sciaps, Inc. | Automated focusing, cleaning, and multiple location sampling spectrometer system |
| US9952100B2 (en) | 2013-01-21 | 2018-04-24 | Sciaps, Inc. | Handheld LIBS spectrometer |
| US9435742B2 (en) * | 2013-01-21 | 2016-09-06 | Sciaps, Inc. | Automated plasma cleaning system |
| WO2014113824A2 (en) | 2013-01-21 | 2014-07-24 | Sciaps, Inc. | Handheld libs spectrometer |
| JP6177601B2 (ja) * | 2013-06-25 | 2017-08-09 | 東京エレクトロン株式会社 | クリーニング方法及び基板処理装置 |
| DE102013014147B4 (de) * | 2013-08-23 | 2017-02-16 | Centrotherm Photovoltaics Ag | Verfahren und vorrichtung zum detektieren einer plasmazündung |
| JP6284786B2 (ja) * | 2014-02-27 | 2018-02-28 | 東京エレクトロン株式会社 | プラズマ処理装置のクリーニング方法 |
| US10375901B2 (en) | 2014-12-09 | 2019-08-13 | Mtd Products Inc | Blower/vacuum |
| US9664565B2 (en) | 2015-02-26 | 2017-05-30 | Sciaps, Inc. | LIBS analyzer sample presence detection system and method |
| US9651424B2 (en) | 2015-02-26 | 2017-05-16 | Sciaps, Inc. | LIBS analyzer sample presence detection system and method |
| US10209196B2 (en) | 2015-10-05 | 2019-02-19 | Sciaps, Inc. | LIBS analysis system and method for liquids |
| US9939383B2 (en) | 2016-02-05 | 2018-04-10 | Sciaps, Inc. | Analyzer alignment, sample detection, localization, and focusing method and system |
| KR102490700B1 (ko) * | 2017-03-27 | 2023-01-26 | 주식회사 히타치하이테크 | 플라스마 처리 방법 |
| JP7078792B2 (ja) | 2020-02-10 | 2022-05-31 | 株式会社日立ハイテク | プラズマ処理方法 |
| CN120749022A (zh) * | 2025-06-17 | 2025-10-03 | 北京集成电路装备创新中心有限公司 | 一种半导体器件的刻蚀方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3117187B2 (ja) * | 1995-12-20 | 2000-12-11 | 株式会社日立製作所 | プラズマクリーニング処理方法 |
| WO1998033362A1 (en) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Plasma device |
| JPH11140675A (ja) | 1997-11-14 | 1999-05-25 | Sony Corp | 真空チャンバーのクリーニング方法 |
| JP2001176843A (ja) | 1999-12-21 | 2001-06-29 | Nec Kyushu Ltd | ドライクリーニング方法 |
| JP3639795B2 (ja) * | 2000-03-13 | 2005-04-20 | キヤノン株式会社 | 薄膜の製造方法 |
| JP2003064476A (ja) * | 2001-08-23 | 2003-03-05 | Canon Inc | 堆積膜形成装置のクリーニング処理方法 |
| JP2003197615A (ja) * | 2001-12-26 | 2003-07-11 | Tokyo Electron Ltd | プラズマ処理装置およびそのクリーニング方法 |
| US6811936B2 (en) * | 2002-12-31 | 2004-11-02 | Freescale Semiconductor Inc. | Structure and process for a pellicle membrane for 157 nanometer lithography |
| JP4143505B2 (ja) * | 2003-09-03 | 2008-09-03 | 株式会社半導体理工学研究センター | Ｍｏｓ型半導体装置及びその製造方法 |
| US7267842B2 (en) * | 2004-03-15 | 2007-09-11 | Air Products And Chemicals, Inc. | Method for removing titanium dioxide deposits from a reactor |
| JP2006060167A (ja) * | 2004-08-24 | 2006-03-02 | Realize Advanced Technology Ltd | 半導体基板処理装置のクリーニング方法 |
| KR20060079352A (ko) | 2004-12-30 | 2006-07-06 | 동부일렉트로닉스 주식회사 | 반도체 공정챔버의 파티클 제거장치 및 제거방법 |
| JP4764028B2 (ja) * | 2005-02-28 | 2011-08-31 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| JP4776959B2 (ja) * | 2005-03-28 | 2011-09-21 | 国立大学法人名古屋大学 | 撥水処理方法 |
| JP2007173558A (ja) * | 2005-12-22 | 2007-07-05 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| KR100753158B1 (ko) * | 2006-06-19 | 2007-08-30 | 삼성전자주식회사 | 공정 챔버의 세정 방법 |
| US20100006976A1 (en) * | 2007-03-19 | 2010-01-14 | Ippei Kume | Semiconductor device and manufacturing method thereof |
| JP2008244292A (ja) * | 2007-03-28 | 2008-10-09 | Hitachi High-Technologies Corp | プラズマ処理装置の処理性能安定化方法 |
| JP5364978B2 (ja) * | 2007-03-28 | 2013-12-11 | 富士通セミコンダクター株式会社 | 表面改質カーボンナノチューブ系材料、その製造方法、電子部材および電子装置 |
| JP2009159111A (ja) * | 2007-12-25 | 2009-07-16 | Sanyo Electric Co Ltd | レベルシフト回路 |
| JP5665289B2 (ja) * | 2008-10-29 | 2015-02-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| JP5358165B2 (ja) * | 2008-11-26 | 2013-12-04 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| JP2010198659A (ja) * | 2009-02-23 | 2010-09-09 | Showa Denko Kk | 処理装置、インライン式成膜装置、磁気記録媒体の製造方法 |
-
2010
- 2010-10-07 JP JP2010227640A patent/JP5705495B2/ja not_active Expired - Fee Related
- 2010-12-20 TW TW099144758A patent/TWI416626B/zh active
-
2011
- 2011-01-19 US US13/008,993 patent/US8500912B2/en active Active
- 2011-01-21 KR KR1020110006220A patent/KR101285750B1/ko active Active