201211522 六、發明說明： 【發明所屬之技術領域】 本發明涉及半導《件㈣造佩，尤其涉及— 處理設備的氣體洩漏檢測方法， ^ 【先前技術】201211522 VI. Description of the Invention: [Technical Field] The present invention relates to a semi-conductive "part (4) peening, in particular, to a gas leak detecting method of a processing device, ^ [Prior Art]
現代半導體加工設備經常用到等離子體對基片進行加 工，通常要將設備_反應腔抽絲技者在極低氣壓 入反應氣體’再對半導體或魏材料構成進行加工 半導體加工設備包括化學她稀⑽），難，等離 助化學氣她積（漏）f。在這麵理過針需要保 應過程精確的控制’因為任何不可控因素的引人都會導致處 理得到的基片產生缺陷，甚至重大的缺陷。半導體加工設備 的反應腔漏氣就是需要嚴格防止的情況之―，因為空氣中的 N2，02，水氣及其它氣體賴到反應腔⑽料反應腔的反 應過程和氛圍造成重大影響。最終造成加工基片的缺陷。所 以需要在基片處理流程上對空氣賴故障進行檢測和處理。 一般的真空反應腔檢財㈣要先將反應腔抽至低氣 壓，然後用壓強計（manometer)測量壓強隨時間變化而計算 出漏率。這種方法需要佔職長的時間，從而影響產能，另 外這種方法不能在生錢針即時的監控有錢漏發生。 現有技術如US5789754揭露了利用在反應腔中點燃等離 子體後彳j用光千感應II來檢測等離子體巾的光譜，發現 光谱中有代表空氣的成分如魏的對應光譜而诚頻率發光 強度大於設定㈣就觸得出該反應腔已經漏氣。 3 201211522 現有技術US2005/00037500揭露了在反應腔内通入氟碳 化合物或碳IL化合物來產生等離子體，然後再檢測碳與空氣 中的氮形成的CN化合物的對應光譜來判斷反應腔是否有漏 氣。其他現有技術也有用氬氣（Argon)來點燃等離子再檢測 代表空氣成分的對應光譜來檢測漏氣的。 這些現有技術都用到點燃等離子來檢測有沒有代表空氣 成分的光譜來判斷有沒有漏氣。但是這些現有技術在點燃等 離子的方法上存在弊病，在對基板進行處理過程中本身需要 點燃等離子，但是此時進行檢測在應用場合上受到报大限 制.反應氣體和待處理基Μ不能含有任何與空氣中的特徵氣Modern semiconductor processing equipment often uses plasma to process the substrate. Usually, the equipment is used to process the semiconductor gas or the Wei material at a very low pressure. (10)), difficult, to help the chemical gas her product (leak) f. In this case, it is necessary to ensure precise control of the process. Because any uncontrollable factors lead to defects or even major defects in the processed substrate. The leakage of the reaction chamber of the semiconductor processing equipment is a situation that needs to be strictly prevented, because the reaction process and atmosphere of the reaction chamber (10) in the reaction chamber (10) in the air are greatly affected. The result is a defect in the processing of the substrate. Therefore, it is necessary to detect and process the air fault on the substrate processing flow. The general vacuum reaction chamber is checked (4). The reaction chamber is first pumped to a low gas pressure, and then the pressure meter is used to measure the pressure change with time to calculate the leak rate. This method requires a long period of time, which affects the production capacity. In addition, this method cannot make money leakage in the instant monitoring of the money. The prior art, such as US Pat. No. 5,789,754, discloses the use of a light-sensing II in the reaction chamber to detect the spectrum of the plasma towel. It is found that there is a corresponding spectrum of the component representing the air such as Wei in the spectrum, and the luminous intensity of the frequency is greater than the setting. (4) It is concluded that the reaction chamber has leaked. 3 201211522 Prior Art US2005/00037500 discloses that a fluorocarbon or carbon IL compound is introduced into a reaction chamber to generate a plasma, and then a corresponding spectrum of a CN compound formed by carbon and nitrogen in the air is detected to determine whether the reaction chamber is leaky. gas. Other prior art techniques also use Argon to ignite the plasma and detect the corresponding spectrum representing the air component to detect leaks. These prior art techniques use igniting plasma to detect the presence or absence of a spectrum representative of the air component to determine if there is a leak. However, these prior art methods have drawbacks in the method of igniting plasma. In the process of processing the substrate, the plasma itself needs to be ignited, but at this time, the detection is limited in application. The reaction gas and the substrate to be treated cannot contain any Characteristic gas in the air
基片如Si〇2、SiN中的原子也會發出對應波長的光就無法判 斷反應腔是否漏氣了。甚至反應腔本身部件也會含有氧成分 (如A12G3或Y2G3)所以在反應過程巾檢測會有报大的局限。 如果把漏氣檢測做為額外步驟添加到加卫處理步驟之後雖然 畚 可以避免上述問題，但是額外的時間會對整個處理系統的產 這樣一來為了檢測漏氣就會極 際加工的時間，降低了產能。 能誠影響。較職_需要㈣進行，所灿果要用額 外的檢測步驟的話就需要在基片加工處理絲後頻繁進行， 大的降低了半導體加工設備實 所以工業界需要改進現有漏氣檢 於提供一種反應腔氣體洩漏檢測方法， 測應用範圍的同時不會對整個系 【發明内容】 本發明的目的在於 >軋檢測方法’在提高漏氣檢 統的產能造成影響。 4 201211522 其不僅能夠提供較好的形貌控制，而且可以實現高精度、快 速高效、無反應腔污染的刻蝕。 本發明是通過以下技術方法實現的： 一種反應腔漏氣檢測方法，包括：基片加工步驟，在反 應腔裡對JL件進行加工；等離子清洗步驟，通人氧並點燃等離 子’檢測氧等離子體十的光譜，檢測到代表氮氣的光譜大於 參考值時判斷反應腔漏氣。其中基片加工步驟包括刻颠或化 學氣相沉積。所述等離子清洗轉包括第—轉子清洗段和 接下來的第二轉子清洗段，第二轉子清洗段開始檢測等 離子體光譜成分。當第二等離子清洗段檢剩並判斷發生反 應腔漏氣咖_第二_子清洗段，直_離子清洗步驟 結束；判斷反應腔沒有漏氣時立即終止等離子清洗步驟，進 入下一個基片加工步驟。其中在第二清洗段檢測等離子光譜 成分是用反應終點檢測系統來實現的。該等離子清洗步驟第 一等離子清洗階段_長度大於2〇秒，第二清洗段的時間小 於5秒。 本發明反應腔漏氣檢測方法，其特徵在於，所述代表氮 氣的光譜波長為316，337，355nm之一。 本發明也提供一種真空反應器控制方法，該控制方法包 括：加工步驟，通入反應氣體到反應腔内對工件進行加工；等 離子清洗步驟’通人氧迦鮮離子，清洗私反應 多個加工步驟和等軒親步·# 先 步鄉包括第-清洗段和第二清洗段，第一清洗：= 間内完成對真空反應H内腔的清洗’第二清洗段在第二預定時[ 5 201211522 間内檢測氧等離子中的光譜，檢測到代表氮氣的光譜大於設定 參考值時判斷反應腔漏氣，停止真空反應器運行；沒有檢測到 代表氮氣的光譜大於設定參考值時進入下一步的加工步驟。其 中所述第一預定時間可以長於2〇秒，第二預定時間小於5秒。 所述第二清洗段内判斷反應腔漏氣後直到第二預定時間 結束再停止真空反應器運行。 【實施方式】 本發明提供一種真空反應腔的氣體洩漏檢測方法。真空 反應腔可以是廣泛應用的等離子刻蝕或化學沉積反應腔，也 可以是其他需要真空狀態的反應腔。圖丨是一個典型的等離 子刻姓反應腔.該反應腔包括外腔體壁1，腔體頂部有氣體分 絲置如噴淋頭1卜喷淋頭接受來自氣源110的反應氣體並 均勻分佈浙應腔内，同時魏體分棘置u也作為等離子 產生的上電極。反應腔下部包括一基座22，基座上設置有處 理基片固定襄置21 ,基片固定裝置21可以是靜電夾盤（ESC) 也可以是其他如機械固定裝置。基片20放置在基片固定裝置 21上。邊緣環23放置在基片週邊以改進基片邊緣區域的處理 效果。-個射頻電源施加到基座22巾的下電極使得上下電極 間產生高頻電場點燃等離子。本發明除了適用於圖（所示的 可以用於電频合型⑽）轉子反應腔也可_於電_ 合型（ICP)反應腔。也可以用在其他進行真空狀態處理並且 包括等離子點燃裝置的反應腔上。 半導體基片處理過程中通常會在加工完基片後移除加工 一基片，並較應腔進行清潔，以麵反應過程巾殘留在⑸ 6 201211522The atoms in the substrate, such as Si〇2 and SiN, also emit light of the corresponding wavelength, and it is impossible to judge whether or not the reaction chamber leaks. Even the components of the reaction chamber itself contain oxygen components (such as A12G3 or Y2G3), so there is a big limitation in the detection of the reaction process. If the leak detection is added as an extra step to the reinforcement processing step, although the above problem can be avoided, the extra time will be generated for the entire processing system, so that the time for the extreme processing is reduced in order to detect the leak. The production capacity. Can be honest. Jobs _ need (4) to carry out, if the additional test steps need to be carried out after the processing of the substrate, the semiconductor processing equipment is greatly reduced, so the industry needs to improve the existing leak detection to provide a reaction. The cavity gas leak detecting method does not measure the application range at the same time. [The present invention] The object of the present invention is that the "rolling detecting method" affects the productivity of the leak detecting system. 4 201211522 It not only provides better shape control, but also achieves high-precision, fast and efficient etching without reaction chamber contamination. The invention is realized by the following technical methods: a reaction chamber leak detection method, comprising: a substrate processing step, processing a JL piece in a reaction chamber; a plasma cleaning step, passing a human oxygen and igniting a plasma 'detecting an oxygen plasma The spectrum of ten is judged to be leaking in the reaction chamber when the spectrum representing nitrogen is detected to be larger than the reference value. The substrate processing steps include indentation or chemical vapor deposition. The plasma cleaning pass includes a first rotor cleaning section and a subsequent second rotor cleaning section, and the second rotor cleaning section begins to detect plasma spectral components. When the second plasma cleaning section is left over and judges that the reaction chamber leaks, the second_sub-cleaning section ends, and the straight-ion cleaning step ends; when it is judged that the reaction chamber has no air leakage, the plasma cleaning step is immediately terminated, and the next substrate processing is performed. step. The detection of the plasma spectral composition in the second cleaning section is carried out using a reaction endpoint detection system. The plasma cleaning step of the first plasma cleaning stage has a length of more than 2 seconds and a second cleaning stage of less than 5 seconds. The method for detecting a leak in a reaction chamber according to the present invention is characterized in that the spectral wavelength of the representative nitrogen gas is one of 316, 337, 355 nm. The invention also provides a vacuum reactor control method, which comprises: a processing step of introducing a reaction gas into a reaction chamber to process a workpiece; a plasma cleaning step of "passing human oxygen fresh ions, cleaning a private reaction, a plurality of processing steps And et al. #先步乡 includes the first-cleaning section and the second cleaning section, the first cleaning: = the completion of the cleaning of the vacuum reaction H lumen in the interval 'the second cleaning section is at the second predetermined time [ 5 201211522 The spectrum in the oxygen plasma is detected in between, and when the spectrum representing the nitrogen gas is greater than the set reference value, it is judged that the reaction chamber leaks, and the vacuum reactor operation is stopped; when the spectrum representing the nitrogen gas is not detected to be larger than the set reference value, the processing step is entered. . The first predetermined time may be longer than 2 seconds and the second predetermined time is less than 5 seconds. The second cleaning section judges that the reaction chamber leaks and then stops the vacuum reactor operation until the end of the second predetermined time. Embodiments The present invention provides a gas leak detecting method for a vacuum reaction chamber. The vacuum reaction chamber can be a widely used plasma etching or chemical deposition reaction chamber, or other reaction chambers requiring a vacuum state. Figure 丨 is a typical plasma engraved reaction chamber. The reaction chamber includes the outer chamber wall 1. The gas is divided at the top of the chamber. The sprinkler head receives the reaction gas from the gas source 110 and is evenly distributed. In the chamber of Zhejiang, the Wei body is also used as the upper electrode of the plasma. The lower portion of the reaction chamber includes a base 22 on which is disposed a processing substrate holding device 21, which may be an electrostatic chuck (ESC) or other such as a mechanical fixing device. The substrate 20 is placed on the substrate holding device 21. Edge ring 23 is placed around the periphery of the substrate to improve the processing of the edge regions of the substrate. An RF power source is applied to the lower electrode of the susceptor 22 so that a high frequency electric field is generated between the upper and lower electrodes to ignite the plasma. The present invention can be applied to the rotor reaction chamber of the figure (which can be used for the electric frequency (10)) as well as the electro-optical (ICP) reaction chamber. It can also be used on other reaction chambers that perform vacuum processing and include plasma ignition devices. During the processing of the semiconductor substrate, a substrate is usually removed after the substrate is processed, and the cavity is cleaned, and the surface reaction process remains (5) 6 201211522
反應腔内壁或其他部件上的聚合物或其他殘留物。這種生產 過程中的（wafer-less clean WLC)步驟通常要向反應腔中 通入純氧，點燃等離子，然後利用等離子體的氧清除殘留物。 在清潔步驟完成後就可進行下一步的基片處理了。本發明在 等離子清潔步驟中利用圖1所示的光學探測儀器3〇提取反應 腔中的等離子發出的光線，光信號傳輸給光譜儀並提取等離 子光信號的頻譜分佈（如圖2所示），最後通過處理器如pC 的計算比較來判斷是狀触發生了 其中光學探 測儀器30和光譜儀、pC可以與反應腔的反應終點探測系統共 用也可以是為漏氣探測專門設計新的光學探測系統。如圖2 所示清潔過程中的氧產生典型物質特徵譜為又=777⑽。空氣 中〜·的成分為氮氣（N2)，N2的特徵譜線為又伽，&'， 355簡。如果反應腔錢漏，空氣中的Ν2就會進入反應腔， 光譜中就會出現如圖2所示Ν2的特徵譜線。Ν2特徵譜線的強 弱與反應㈣醉成正比。通爾光譜巾的⑽轉子譜線的 即時檢測，即可對反應腔的漏率進行即時檢測。 使用本發明應用到現有自動化生產線中可以採用特殊設 =的流程。將傳崎潔轉的時_麵私為終點檢測模 =的新清齡驟，並概遲郎懷置為縣清潔步驟所需時 間。例如原有清潔步驟要求點燃等離子2 可以將延遲時_秒，其二= 擇了以根據真工反應腔的形狀容積，和氧氣通 咖長度，贿證_清潔整個反應腔^ ’比如20秒的輪氧版量較高時咖完成清細 7 201211522 務。以下提及清潔步驟_是指本發明特殊流程的清潔步驟 (第—等離子清洗段）。清潔步驟經過足夠時間長度的等離子 清潔以保證反應腔内壁清潔後再進入氣體洩漏檢測步驟（第 二等離子清洗段），本發明等離子清潔處理所需時間可設定為 一個略長於原有清潔步驟所需時間的處理時間，如設定為3〇 秒。在處理時間3〇秒内先進行傳統的等離子清潔步驟25秒 再利用終點判斷系統開始對氣體洩漏情況進行判斷。在氣體 洩漏判檢測驟中可以用N2等離子譜線強度是否小於某一數值 來進行，例如.當N2特徵譜線λ =316nm的強度低於1〇〇時清 潔步驟終止，處理流程準備進入下一片基片的處理階段。其 中參考的發光強度隨著腔體漏率要求的不同可以不同，比如 當腔體漏率為3.6mtorr/min時參考的316nm譜線強度為 120。當通過比對發現N2特徵譜線又=316咖的強度大於1〇〇 時則代表發生了氣體洩漏。 在利用現有反應終點探測系統來判斷氣體洩漏狀態時， 由於現有反應終點探測系統僅需在發現反應終點對應的光譜 後直接結束當則加工步驟，無需作進一步動作，所以通常該 系統軟體沒有多餘的判斷並跳轉模組，應用到本發明場合時 用原有軟體就不能有效實現本發明的功能了。如果要修改現 有反應終點探測系統的軟體則需要投入大量的成本與時間進 行调試。此時由於終點檢測系統中軟體環境的不同，當發現 有氣體洩漏情況時可以有不同的選擇：可以繼續執行氣體洩 漏檢測步驟直到預設的氣體洩漏檢測步驟時間（5S)結束， 设備停止運行’排查故障；當沒有檢測到氣體洩漏時直接進[s] 8 201211522 入下-步的半導體基>1處理步驟，考圖3所示的流程。這 樣的邏輯設置可贼得在不増加__的纽下檢測氣體 麟情況’即使有檢_發生氣體細情況也僅需等待數秒 鐘然後進人故障狀態。所以_本翻上述圖3所示的流程 可以實現完全用财反麟轉__倾，再利用一個 簡單的計時糾可實縣發_舰科增加任何成本。當 然，只要現有反應終點探測系統的軟體環境允許，也可以在 發現漏氣時直接終止歧_停止設備斯，排查故障。 本發明利用現有清潔步驟中的氧氣等離子實現了對茂漏 氣體的光譜分析’由於在清潔過程巾只有氧被通人反應腔， 反應過程中的殘留物也在先前進行的清潔過程中被分解抽 走，所以基本沒有雜質原子對檢測結果造成影響。本發明可A polymer or other residue on the inner wall of the reaction chamber or other component. This wafer-less clean WLC step typically involves passing pure oxygen into the reaction chamber, igniting the plasma, and then using the oxygen of the plasma to remove the residue. After the cleaning step is completed, the next substrate processing can be performed. The invention extracts the light emitted by the plasma in the reaction chamber by using the optical detecting instrument 3 shown in FIG. 1 in the plasma cleaning step, and the optical signal is transmitted to the spectrometer and extracts the spectral distribution of the plasma optical signal (as shown in FIG. 2). It is judged by the calculation and comparison of the processor such as pC that the optical detecting instrument 30 and the spectrometer, pC can be shared with the reaction end point detecting system of the reaction chamber, or a new optical detecting system can be specially designed for the leak detecting. The typical material profile of oxygen generation during the cleaning process shown in Figure 2 is again = 777 (10). The composition of ~· in the air is nitrogen (N2), and the characteristic line of N2 is gamma, & ', 355. If the reaction chamber leaks, the Ν2 in the air will enter the reaction chamber, and the characteristic line of Ν2 shown in Fig. 2 will appear in the spectrum. The strength of the Ν2 characteristic line is proportional to the reaction (4) drunk. The instantaneous detection of the (10) rotor line of the Tonger spectrum towel enables instant detection of the leak rate of the reaction chamber. The application of the invention to existing automated production lines can be carried out using a special designation. When the time of the transfer is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ For example, the original cleaning step requires that the plasma 2 be ignited by _ sec, the second = selected according to the shape volume of the real reaction chamber, and the length of the oxygen café, bribe _ clean the entire reaction chamber ^ '20 seconds When the amount of oxygen in the wheel is high, the coffee is finished in the fine 7 201211522. The cleaning step _ is referred to below refers to the cleaning step (the first plasma cleaning section) of the special process of the present invention. The cleaning step is performed after a sufficient period of plasma cleaning to ensure that the inner wall of the reaction chamber is cleaned before entering the gas leak detecting step (second plasma cleaning section), and the time required for the plasma cleaning process of the present invention can be set to be slightly longer than the original cleaning step. The processing time of the time is set to 3 seconds. The conventional plasma cleaning step is performed for 25 seconds within 3 seconds of the processing time. The end point judgment system is used to judge the gas leakage. In the gas leakage detection test, whether the intensity of the N2 plasma line is less than a certain value can be used. For example, when the intensity of the N2 characteristic line λ = 316 nm is less than 1 清洁, the cleaning step is terminated, and the processing flow is ready to enter the next piece. The processing stage of the substrate. The intensity of the reference light can vary with cavity leakage rate requirements, such as a reference 316 nm line intensity of 120 when the cavity leak rate is 3.6 mtorr/min. When the N2 characteristic line is found by comparison and the intensity of the 316 coffee is greater than 1 则, a gas leak occurs. When using the existing reaction end point detection system to judge the gas leakage state, since the existing reaction end point detection system only needs to finish the processing step directly after finding the spectrum corresponding to the reaction end point, no further action is required, so usually the system software is not redundant. When the module is judged and jumped, the function of the present invention cannot be effectively realized by using the original software when applied to the present invention. If you want to modify the software of the existing reaction endpoint detection system, you need to invest a lot of cost and time to debug. At this time, due to the difference in the software environment in the endpoint detection system, when a gas leak is found, there may be different choices: the gas leak detection step can be continued until the preset gas leak detection step time (5S) ends, and the device stops running. 'Troubleshooting; when no gas leak is detected, go directly to [s] 8 201211522 into the next step of the semiconductor base > 1 processing steps, the process shown in Figure 3. This kind of logic setting allows the thief to detect the gas in the case of not adding __. Even if there is a check, the gas is fine, and it only takes a few seconds to enter the fault state. Therefore, the process shown in Figure 3 above can be achieved by completely using the financial reverse __ 倾, and then using a simple timing to correct the county _ ship science to increase any cost. Of course, as long as the software environment of the existing reaction endpoint detection system allows, it is also possible to terminate the fault directly when the air leak is detected. The present invention utilizes oxygen plasma in the existing cleaning step to achieve spectral analysis of the leachate gas. Since only oxygen is passed through the reaction chamber during the cleaning process, the residue in the reaction process is also decomposed during the previous cleaning process. Go, so there are basically no impurity atoms that affect the test results. The invention can
以用於任何真空反應腔的漏氣檢測，具有很廣的適用性。同 時清潔步驟本身就是處理流程的必要步驟所以本發明也沒有 降低設備的運行效率保證了產能穩定。 本發明利用等離子光譜來檢測反應腔洩露方法可以應用 於任何真空反應腔，在第一步對基片處理處理完成後將基片 移除’在後續的清潔步驟中通入清潔反應腔内壁的氣體並點 燃等離子體’然後檢測是否有代表空氣成分的光譜如又 =316nm的光譜’且該光譜的強度大於設定值來判斷反應腔是 否漏氣。其邏輯判斷和運行流程可以與圖3所示的相同。本 發明在每個處理步驟之間的清潔步驟都對反應腔進行檢測可 以實現對反應腔的即時檢測。在檢測完成後如果沒有發現漏 氣現象則進入下一步等離子處理步驟，下一步處理步驟可以[s] 9 201211522 與檢測前的處理步驟不同也可以相同β 本發明雖然啸佳實補公開如上，但其並不是用來限 定本發明，任何本領域技術人員在不脫離本發明的精神和範圍 内，都可以做出可能的變動和修改，因此本發明的保護範圍應 當以本發明權利要求所界定的範圍為准。 【圖式簡單說明】 圖1示出了運用本發明一個具體實施例的反應腔結構圖； 圖2為根據本發明的一個具體實施例的反應腔内光譜分 伟示意圖； 圖3為根據本發明判斷氣體洩漏和反應腔運行的流程。 【主要元件符號說明】 I 外腔體壁 II 分佈装置 氣源 20 基片 21固定裴置 22 基座 23 邊緣環 30 光學探測儀器 Ν2 氮氣It has a wide applicability for leak detection in any vacuum reaction chamber. At the same time, the cleaning step itself is a necessary step of the processing flow, so the invention does not reduce the operating efficiency of the equipment to ensure stable production capacity. The invention utilizes plasma spectroscopy to detect the reaction chamber leakage method and can be applied to any vacuum reaction chamber, and removes the substrate after the first step of processing the substrate. 'In the subsequent cleaning step, the gas is introduced into the inner wall of the cleaning reaction chamber. And igniting the plasma 'and then detecting whether there is a spectrum representing the air component such as the spectrum of = 316 nm' and the intensity of the spectrum is greater than the set value to determine whether the reaction chamber is leaking. The logical judgment and operation flow can be the same as that shown in FIG. The present invention detects the reaction chamber in a cleaning step between each processing step to enable immediate detection of the reaction chamber. If no air leakage is found after the detection is completed, the next step of the plasma treatment is performed, and the next processing step may be [s] 9 201211522, which may be the same as the processing step before the detection. The present invention is disclosed in the above, although It is not intended to limit the invention, and any person skilled in the art can make possible variations and modifications without departing from the spirit and scope of the invention, and therefore the scope of the invention should be defined by the claims of the present invention. The scope shall prevail. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a structural diagram of a reaction chamber in which a specific embodiment of the present invention is applied; FIG. 2 is a schematic diagram showing spectral distribution in a reaction chamber according to an embodiment of the present invention; Determine the flow of gas leaks and reaction chamber operations. [Main component symbol description] I External cavity wall II Distribution device Gas source 20 Substrate 21 Fixed device 22 Base 23 Edge ring 30 Optical detection instrument Ν2 Nitrogen