CN102969256B - Detection method of black silicon on top electrode of etching machine platform - Google Patents
Detection method of black silicon on top electrode of etching machine platform Download PDFInfo
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- CN102969256B CN102969256B CN201210451808.2A CN201210451808A CN102969256B CN 102969256 B CN102969256 B CN 102969256B CN 201210451808 A CN201210451808 A CN 201210451808A CN 102969256 B CN102969256 B CN 102969256B
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Abstract
The invention discloses a detection method of black silicon on a top electrode of an etching machine platform. The method detects black silicon effects by measuring uniformity of light resistance etching rate, the black silicon effects are reflected by the uniformity of the light resistance etching rate prior than that of the uniformity of an oxidation film, and therefore compared with the method adopting the uniformity of the oxidation film to detect the black silicon effects, the detection method of the black silicon on the top electrode of the etching machine platform can detect the black silicon effects at an early stage in advance, accordingly reasonable and effective drying-method washing procedures can be further worked out, and purposes of preventing dumping and reducing cost are achieved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to the method for detecting of the black silicon of a kind of etching machine top electrode.
Background technology
At present, " 2300FLEX(DD/EL) " model etching machine of LAM RESEARCH company is widely used in semiconductor rear section key stratum technique due to very strong etch capabilities, as first layer metal layer dielectric etch, one times of specification dual damascene (1XDD) etching, four times of specification dual damascene (4XDD) etchings, liners (PAD) etchings etc.In this board, top electrode in its etching reaction cavity not only carries the top crown effect of one of two electrodes producing plasma, also bear the work of gas distribution in order to regulate the etching uniformity, thus top electrode is an important component part of etching reaction cavity.But in most of the cases, top electrode all can run into black silicon (Black Si) effect to some extent in application process, this effect can to the uniformity of etch process, and rate of etch and grain defect have a negative impact, and serious meeting causes the low yield of a large amount of wafer and scraps.
So-called black silicon, be exactly in etching reaction process reaction product (Polymer) assemble with needle-like effect in upper electrode surface, finally cause configuration of surface to shift and cause being formed black, as shown in the black part 1 in Fig. 1.The Facing material of top electrode is silicon, and the most first meeting of reaction product forms graininess in the uneven gathering of silicon face, subsequently and then form needle-like silicon (micro-masking).Once needle-like silicon is formed, polymer can accelerate assemble at needle point and finally form the black silicon of 5 ~ 10 microns, as shown in encircled portion in Fig. 2.
Current industry generally adopts timed dry to clean (dry clean) and effectively addresses this problem, and the method for detecting judging when to carry out dry method cleaning is the daily survey machine project of oxide layer reaction chamber being carried out to particle and oxide-film measurement, when there is abnormal (OOC/OOS) in particle and oxide-film parameter, namely judge there is black silicon effect, thus carry out dry method cleaning.
But because the impact of different etching conditions on black silicon effect differs widely, this black silicon effect is difficult to or can postpones to embody in general oxide-film rate of etch and particle test, the dry method cleaning frequency of black silicon effect is therefore prevented to be difficult to grasp; And once particle and oxide-film parameter occur abnormal by the time, black silicon has generally reached the thickness (such as 3 microns) exceeding dry method cleansing power, now dry method cleaning cannot remove black silicon, even it is also of no avail to increase dry cleaning time, and now product also receives impact, and the top electrode of this value with black silicon U.S. dollar up to ten thousand is probably scrapped because of cleaning up, even if made up by some special process processing (as polishing is scraped), also can cause seriously reduce the useful life of board.
Thus, in black silicon effect detecting and prevention process, too macrocyclic dry method cleaning cannot play the effect preventing black silicon, and dry method cleaning seriously can reduce the useful life of the valuable part in reaction chamber too frequently, and reduce the prevention and maintain cycle of whole reaction chamber, thus production cost is caused to increase.Therefore, the black silicon of early stage accurately detecting just becomes an important problem.
Therefore, be necessary to improve the method for detecting of the black silicon of existing etching machine top electrode, effectively to detect black silicon effect in advance and to process in time.
Summary of the invention
The object of the present invention is to provide the method for detecting of the black silicon of etching machine top electrode, effectively to detect black silicon effect in advance and to process in time.
For solving the problem, the present invention proposes the method for detecting of the black silicon of a kind of etching machine top electrode, and the method detects black silicon effect by measuring the photoresistance rate of etch uniformity.
Optionally, the method specifically comprises the steps:
There is provided Semiconductor substrate, on it, preparation has photoresistance;
Timing uses the reaction chamber of the etching machine of volume production to etch described photoresistance, and measures each photoresistance rate of etch and the photoresistance rate of etch uniformity;
The measurement result of the photoresistance rate of etch at every turn obtained and the photoresistance rate of etch uniformity is made tendency chart, and goes out the out of control line of 3 times of standard deviations as tendency chart using the multiple points started as sample calculation;
When the photoresistance rate of etch uniformity occurs out of control, then judge to have occurred early stage black silicon effect.
Optionally, described photoresistance thickness is 20,000 dusts.
Optionally, described timing uses the reaction chamber of the etching machine of volume production to be once a day to the cycle that described photoresistance etches.
Optionally, describedly to the process conditions that described photoresistance etches be:
Pressure: 500mT;
Power: the power adopting 2 mhz frequencys, size is 150 watts;
Gas is O2, and gas flow is 1500SCCM;
Time: 60S.
Optionally, describedly go out ten points that 3 times of standard deviations are specially to start as the line out of control of tendency chart using the multiple points started as sample calculation and go out the out of control line of 3 times of standard deviations as tendency chart as sample calculation.
Optionally, the method also comprises stopping race goods and performs dry method cleaning step after judging to occur early stage black silicon effect.
Optionally, the process conditions of described dry method cleaning step are:
Pressure: 700mT;
Gas is: CF4 and O2, and wherein the flow of CF4 is 200SCCM, O2 is 400SCCM;
Power: comprise 27 megahertz 2500 watts and 2 megahertzes 1000 watts
Gas distribution ratio: influx in the middle of top electrode: edge influx=20:80
Reaction time: 5 ~ 10 minutes.
Optionally, the method also comprises after execution dry method cleaning step tests the photoresistance etching rate uniformity again, and when the photoresistance etching rate uniformity gets back to datum line, release board continues to run goods.
Optionally, described etching machine is the 2300FLEX model etching machine of LAM RESEARCH company.
Compared with prior art, the present invention detects black silicon effect by measuring the photoresistance rate of etch uniformity, because the photoresistance rate of etch uniformity first reflects black silicon effect than the oxide-film uniformity, thus compared with detecting the method for black silicon effect with the employing oxide-film uniformity, the method for detecting of the black silicon of etching machine top electrode provided by the invention can detect early stage black silicon effect in advance, thus make rationally effective dry method cleaning process further, reach prevention and scrap the object reduced costs.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the black silicon effect that etching machine top electrode is formed;
Fig. 2 is the schematic diagram of the black silicon effect of needle-like;
Fig. 3 is the flow chart of the method for detecting of the black silicon of etching machine top electrode of the present invention;
Fig. 4 is the black silicon effect adopting the method for detecting of the black silicon of etching machine top electrode provided by the invention to detect;
Fig. 5 is the black silicon effect adopting prior art to detect.
Embodiment
Be described in further detail below in conjunction with the method for detecting of the drawings and specific embodiments to the black silicon of etching machine top electrode that the present invention proposes.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only for object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, the method for detecting of the black silicon of a kind of etching machine top electrode is provided, the method detects black silicon effect by measuring the photoresistance rate of etch uniformity, because the photoresistance rate of etch uniformity first reflects black silicon effect than the oxide-film uniformity, thus compared with detecting the method for black silicon effect with the employing oxide-film uniformity, the method for detecting of the black silicon of etching machine top electrode provided by the invention can detect early stage black silicon effect in advance, thus make rationally effective dry method cleaning process further, reach prevention and scrap the object reduced costs.
The method for detecting of the black silicon of etching machine top electrode provided by the invention, detects black silicon effect by measuring the photoresistance rate of etch uniformity.Concrete steps about the method for detecting of the black silicon of etching machine top electrode provided by the invention please refer to Fig. 3, Fig. 3 is the flow chart of the method for detecting of the black silicon of etching machine top electrode of the present invention, as shown in Figure 3, the method for detecting of the black silicon of etching machine top electrode provided by the invention specifically comprises the steps:
S1: Semiconductor substrate is provided, on it, preparation has photoresistance;
S2: timing uses the reaction chamber of the etching machine of volume production to etch described photoresistance, and measures each photoresistance rate of etch and the photoresistance rate of etch uniformity;
S3: the measurement result of the photoresistance rate of etch at every turn obtained and the photoresistance rate of etch uniformity is made tendency chart, and go out the out of control line of 3 times of standard deviations as tendency chart using the multiple points started as sample calculation;
S4: when the photoresistance rate of etch uniformity occurs out of control, then judge to have occurred early stage black silicon effect.
Further, described photoresistance thickness is 20,000 dusts.
Further, described timing uses the reaction chamber of the etching machine of volume production to be once a day to the cycle that described photoresistance etches.
Further, describedly to the process conditions that described photoresistance etches be:
Pressure: 500mT;
Power: frequency is 2MHZ, size is 150W;
Gas is O2, and gas flow is 1500SCCM;
Time: 60S.
Further, describedly go out ten points that 3 times of standard deviations are specially to start as the line out of control of tendency chart using the multiple points started as sample calculation and go out the out of control line of 3 times of standard deviations as tendency chart as sample calculation.
Further, the method also comprises stopping race goods and performs dry method cleaning step after judging to occur early stage black silicon effect.
Further, the process conditions of described dry method cleaning step are:
Pressure: 700mT;
Gas is: CF4 and O2, and wherein the flow of CF4 is 200SCCM, O2 is 400SCCM;
Power: comprise 27 megahertz 2500 watts and 2 megahertzes 1000 watts
Gas distribution ratio: influx in the middle of top electrode: edge influx=20:80
Reaction time: 5 ~ 10 minutes.
Further, the method also comprises after execution dry method cleaning step tests the photoresistance etching rate uniformity again, and when the photoresistance etching rate uniformity gets back to datum line, release board continues to run goods.
Further, described etching machine is the 2300FLEX model etching machine of LAM RESEARCH company.
In one embodiment of the invention; described etching machine is the 2300FLEX model etching machine of LAM RESEARCH company; but should be realized that; the present invention is not limited to this, as long as its top electrode can run into the etching machine of black silicon effect to some extent all within protection scope of the present invention in application process in etching process.
About the effect of the method for detecting of the black silicon of etching machine top electrode provided by the invention, please refer to Fig. 4 and Fig. 5, wherein Fig. 4 is the black silicon effect utilizing the method for detecting of the black silicon of etching machine top electrode provided by the invention to detect, Fig. 5 is the black silicon effect adopting prior art to detect, comparison diagram 4 and Fig. 5 known, the black silicon effect of Fig. 5 is more obvious than the black silicon effect of Fig. 4, this illustrates that the method for detecting of the black silicon of etching machine top electrode provided by the invention earlier detects black silicon effect than the method for detecting of prior art, thus can more early take measures, avoid black silicon effect to cause to have a strong impact on.
In sum, the invention provides the method for detecting of the black silicon of a kind of etching machine top electrode, the method detects black silicon effect by measuring the photoresistance rate of etch uniformity, because the photoresistance rate of etch uniformity first reflects black silicon effect than the oxide-film uniformity, thus compared with detecting the method for black silicon effect with the employing oxide-film uniformity, the method for detecting of the black silicon of etching machine top electrode provided by the invention can detect early stage black silicon effect in advance, thus make rationally effective dry method cleaning process further, reach prevention and scrap the object reduced costs.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (9)
1. a method for detecting for the black silicon of etching machine top electrode, is characterized in that, the method detects black silicon effect by measuring the photoresistance rate of etch uniformity; The method specifically comprises the steps:
There is provided Semiconductor substrate, on it, preparation has photoresistance;
Timing uses the reaction chamber of the etching machine of volume production to etch described photoresistance, and measures each photoresistance rate of etch and the photoresistance rate of etch uniformity;
The measurement result of the photoresistance rate of etch at every turn obtained and the photoresistance rate of etch uniformity is made tendency chart, and goes out the out of control line of 3 times of standard deviations as tendency chart using the multiple points started as sample calculation;
When the photoresistance rate of etch uniformity occurs out of control, then judge to have occurred early stage black silicon effect.
2. the method for detecting of the black silicon of etching machine top electrode as claimed in claim 1, it is characterized in that, described photoresistance thickness is 20,000 dusts.
3. the method for detecting of the black silicon of etching machine top electrode as claimed in claim 1, is characterized in that, described timing uses the reaction chamber of the etching machine of volume production to be once a day to the cycle that described photoresistance etches.
4. the method for detecting of the black silicon of etching machine top electrode as claimed in claim 1, is characterized in that, describedly to the process conditions that described photoresistance etches is:
Pressure: 500mT;
Power: frequency is 2MHZ, size is 150W;
Gas is O2, and gas flow is 1500SCCM;
Time: 60S.
5. the method for detecting of the black silicon of etching machine top electrode as claimed in claim 1, it is characterized in that, describedly go out ten points that 3 times of standard deviations are specially to start as the line out of control of tendency chart using the multiple points started as sample calculation and go out the out of control line of 3 times of standard deviations as tendency chart as sample calculation.
6. the method for detecting of the black silicon of etching machine top electrode as claimed in claim 1, is characterized in that, the method also comprises stopping and running goods and perform dry method cleaning step after judging to occur early stage black silicon effect.
7. the method for detecting of the black silicon of etching machine top electrode as claimed in claim 6, it is characterized in that, the process conditions of described dry method cleaning step are:
Pressure: 700mT;
Gas is: CF4 and O2, and wherein the flow of CF4 is 200SCCM, O2 is 400SCCM;
Power: comprise 27 megahertz 2500 watts and 2 megahertzes 1000 watts
Gas distribution ratio: influx in the middle of top electrode: edge influx=20:80
Reaction time: 5 ~ 10 minutes.
8. the method for detecting of the black silicon of etching machine top electrode as claimed in claim 6, it is characterized in that, the method also comprises after execution dry method cleaning step tests the photoresistance etching rate uniformity again, and when the photoresistance etching rate uniformity gets back to datum line, release board continues to run goods.
9. the method for detecting of the black silicon of etching machine top electrode as described in any one of claim 1 to 8, is characterized in that, described etching machine is the 2300FLEX model etching machine of LAM RESEARCH company.
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| CN201210451808.2A CN102969256B (en) | 2012-11-12 | 2012-11-12 | Detection method of black silicon on top electrode of etching machine platform |
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| CN201210451808.2A CN102969256B (en) | 2012-11-12 | 2012-11-12 | Detection method of black silicon on top electrode of etching machine platform |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5585012A (en) * | 1994-12-15 | 1996-12-17 | Applied Materials Inc. | Self-cleaning polymer-free top electrode for parallel electrode etch operation |
| CN101137461A (en) * | 2004-12-23 | 2008-03-05 | 兰姆研究公司 | Methods for silicon electrode assembly etch rate and etch uniformity recovery |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5585012A (en) * | 1994-12-15 | 1996-12-17 | Applied Materials Inc. | Self-cleaning polymer-free top electrode for parallel electrode etch operation |
| CN101137461A (en) * | 2004-12-23 | 2008-03-05 | 兰姆研究公司 | Methods for silicon electrode assembly etch rate and etch uniformity recovery |
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