JP5703565B2 - 化合物半導体装置 - Google Patents

化合物半導体装置 Download PDF

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Publication number
JP5703565B2
JP5703565B2 JP2010004417A JP2010004417A JP5703565B2 JP 5703565 B2 JP5703565 B2 JP 5703565B2 JP 2010004417 A JP2010004417 A JP 2010004417A JP 2010004417 A JP2010004417 A JP 2010004417A JP 5703565 B2 JP5703565 B2 JP 5703565B2
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Japan
Prior art keywords
electrode
compound semiconductor
semiconductor device
layer
gate electrode
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JP2010004417A
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English (en)
Japanese (ja)
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JP2011146446A5 (https=
JP2011146446A (ja
Inventor
史一 八巻
史一 八巻
井上　和孝
和孝 井上
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2010004417A priority Critical patent/JP5703565B2/ja
Priority to US12/987,426 priority patent/US8242512B2/en
Publication of JP2011146446A publication Critical patent/JP2011146446A/ja
Publication of JP2011146446A5 publication Critical patent/JP2011146446A5/ja
Application granted granted Critical
Publication of JP5703565B2 publication Critical patent/JP5703565B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

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  • Junction Field-Effect Transistors (AREA)
JP2010004417A 2010-01-12 2010-01-12 化合物半導体装置 Active JP5703565B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010004417A JP5703565B2 (ja) 2010-01-12 2010-01-12 化合物半導体装置
US12/987,426 US8242512B2 (en) 2010-01-12 2011-01-10 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010004417A JP5703565B2 (ja) 2010-01-12 2010-01-12 化合物半導体装置

Publications (3)

Publication Number Publication Date
JP2011146446A JP2011146446A (ja) 2011-07-28
JP2011146446A5 JP2011146446A5 (https=) 2013-03-07
JP5703565B2 true JP5703565B2 (ja) 2015-04-22

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ID=44257847

Family Applications (1)

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JP2010004417A Active JP5703565B2 (ja) 2010-01-12 2010-01-12 化合物半導体装置

Country Status (2)

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US (1) US8242512B2 (https=)
JP (1) JP5703565B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5790461B2 (ja) 2011-12-07 2015-10-07 富士通株式会社 化合物半導体装置及びその製造方法
JP2013125918A (ja) * 2011-12-16 2013-06-24 Sumitomo Electric Ind Ltd 半導体装置
US10002957B2 (en) * 2011-12-21 2018-06-19 Power Integrations, Inc. Shield wrap for a heterostructure field effect transistor
US10541313B2 (en) * 2018-03-06 2020-01-21 Infineon Technologies Austria Ag High Electron Mobility Transistor with dual thickness barrier layer
US11594625B2 (en) * 2019-02-26 2023-02-28 The Regents Of The University Of California III-N transistor structures with stepped cap layers
JP7443788B2 (ja) * 2020-01-24 2024-03-06 富士通株式会社 半導体装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023938A (ja) * 1988-06-20 1990-01-09 Mitsubishi Electric Corp 電界効果トランジスタ
JP3360774B2 (ja) * 1994-12-20 2002-12-24 株式会社デンソー 高電子移動度電界効果トランジスタ
JP3534624B2 (ja) * 1998-05-01 2004-06-07 沖電気工業株式会社 半導体装置の製造方法
US6639255B2 (en) * 1999-12-08 2003-10-28 Matsushita Electric Industrial Co., Ltd. GaN-based HFET having a surface-leakage reducing cap layer
JP2005086171A (ja) * 2003-09-11 2005-03-31 Fujitsu Ltd 半導体装置及びその製造方法
US7700973B2 (en) * 2003-10-10 2010-04-20 The Regents Of The University Of California GaN/AlGaN/GaN dispersion-free high electron mobility transistors
JP2005286135A (ja) 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
US7229903B2 (en) * 2004-08-25 2007-06-12 Freescale Semiconductor, Inc. Recessed semiconductor device
JP2007227884A (ja) * 2006-01-30 2007-09-06 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
CN101416289A (zh) * 2006-03-28 2009-04-22 日本电气株式会社 场效应晶体管
JP2007294769A (ja) * 2006-04-26 2007-11-08 Toshiba Corp 窒化物半導体素子
JP2007311684A (ja) * 2006-05-22 2007-11-29 Mitsubishi Electric Corp 電界効果型トランジスタ
JP2008034411A (ja) * 2006-07-26 2008-02-14 Toshiba Corp 窒化物半導体素子
JP5190923B2 (ja) * 2007-07-24 2013-04-24 独立行政法人産業技術総合研究所 ＧａＮをチャネル層とする窒化物半導体トランジスタ及びその作製方法
US7745848B1 (en) * 2007-08-15 2010-06-29 Nitronex Corporation Gallium nitride material devices and thermal designs thereof
JP5186661B2 (ja) * 2007-09-28 2013-04-17 富士通株式会社 化合物半導体装置
WO2009073866A1 (en) * 2007-12-07 2009-06-11 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Gate after diamond transistor
JP5276849B2 (ja) * 2008-01-09 2013-08-28 新日本無線株式会社 窒化物半導体装置の製造方法
JP4794656B2 (ja) * 2009-06-11 2011-10-19 シャープ株式会社 半導体装置
JP2011082216A (ja) * 2009-10-02 2011-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
US9312343B2 (en) * 2009-10-13 2016-04-12 Cree, Inc. Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials

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Publication number Publication date
US8242512B2 (en) 2012-08-14
US20110169014A1 (en) 2011-07-14
JP2011146446A (ja) 2011-07-28

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