JP5693941B2 - テンプレートの表面処理方法及び装置並びにパターン形成方法 - Google Patents

テンプレートの表面処理方法及び装置並びにパターン形成方法 Download PDF

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Publication number
JP5693941B2
JP5693941B2 JP2010280514A JP2010280514A JP5693941B2 JP 5693941 B2 JP5693941 B2 JP 5693941B2 JP 2010280514 A JP2010280514 A JP 2010280514A JP 2010280514 A JP2010280514 A JP 2010280514A JP 5693941 B2 JP5693941 B2 JP 5693941B2
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JP
Japan
Prior art keywords
template
coupling agent
chamber
surface treatment
unit
Prior art date
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Expired - Fee Related
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JP2010280514A
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English (en)
Japanese (ja)
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JP2011224965A5 (https=
JP2011224965A (ja
Inventor
村 嘉 久 河
村 嘉 久 河
林 克 稔 小
林 克 稔 小
藤 信 一 伊
藤 信 一 伊
秀 和 林
秀 和 林
田 寛 冨
田 寛 冨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2010280514A priority Critical patent/JP5693941B2/ja
Priority to TW100104479A priority patent/TWI500071B/zh
Priority to KR1020110018954A priority patent/KR101226289B1/ko
Priority to CN201110052481.7A priority patent/CN102208335B/zh
Priority to US13/043,911 priority patent/US20110244131A1/en
Publication of JP2011224965A publication Critical patent/JP2011224965A/ja
Publication of JP2011224965A5 publication Critical patent/JP2011224965A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Micromachines (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
JP2010280514A 2010-03-31 2010-12-16 テンプレートの表面処理方法及び装置並びにパターン形成方法 Expired - Fee Related JP5693941B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010280514A JP5693941B2 (ja) 2010-03-31 2010-12-16 テンプレートの表面処理方法及び装置並びにパターン形成方法
TW100104479A TWI500071B (zh) 2010-03-31 2011-02-10 A surface treatment method and apparatus for a die, and a pattern forming method
KR1020110018954A KR101226289B1 (ko) 2010-03-31 2011-03-03 템플릿의 표면 처리 방법 및 장치 및 패턴 형성 방법
CN201110052481.7A CN102208335B (zh) 2010-03-31 2011-03-04 模板的表面处理方法及装置以及图案形成方法
US13/043,911 US20110244131A1 (en) 2010-03-31 2011-03-09 Method and apparatus for template surface treatment, and pattern forming method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010081019 2010-03-31
JP2010081019 2010-03-31
JP2010280514A JP5693941B2 (ja) 2010-03-31 2010-12-16 テンプレートの表面処理方法及び装置並びにパターン形成方法

Publications (3)

Publication Number Publication Date
JP2011224965A JP2011224965A (ja) 2011-11-10
JP2011224965A5 JP2011224965A5 (https=) 2013-04-04
JP5693941B2 true JP5693941B2 (ja) 2015-04-01

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JP2010280514A Expired - Fee Related JP5693941B2 (ja) 2010-03-31 2010-12-16 テンプレートの表面処理方法及び装置並びにパターン形成方法

Country Status (5)

Country Link
US (1) US20110244131A1 (https=)
JP (1) JP5693941B2 (https=)
KR (1) KR101226289B1 (https=)
CN (1) CN102208335B (https=)
TW (1) TWI500071B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5350424B2 (ja) * 2011-03-24 2013-11-27 東京エレクトロン株式会社 表面処理方法
JP5898549B2 (ja) * 2012-03-29 2016-04-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN102866582B (zh) * 2012-09-29 2014-09-10 兰红波 一种用于高亮度led图形化的纳米压印装置和方法
JP2015149390A (ja) * 2014-02-06 2015-08-20 キヤノン株式会社 インプリント装置、型、および物品の製造方法
JP6532419B2 (ja) * 2015-03-31 2019-06-19 芝浦メカトロニクス株式会社 インプリント用のテンプレート製造装置
WO2016159312A1 (ja) * 2015-03-31 2016-10-06 芝浦メカトロニクス株式会社 インプリント用のテンプレート製造装置
WO2016159310A1 (ja) * 2015-03-31 2016-10-06 芝浦メカトロニクス株式会社 インプリント用のテンプレート製造装置
JP6486206B2 (ja) 2015-03-31 2019-03-20 芝浦メカトロニクス株式会社 インプリント用のテンプレート製造装置
JP6529843B2 (ja) * 2015-07-14 2019-06-12 芝浦メカトロニクス株式会社 インプリント用のテンプレート製造装置及びテンプレート製造方法
JP6441181B2 (ja) 2015-08-04 2018-12-19 東芝メモリ株式会社 インプリント用テンプレートおよびその製造方法、および半導体装置の製造方法
CN109804275B (zh) * 2016-08-26 2023-08-25 分子印记公司 制造单片光子器件的方法、光子器件
JP6698489B2 (ja) * 2016-09-26 2020-05-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US11413591B2 (en) 2017-11-02 2022-08-16 Magic Leap, Inc. Preparing and dispensing polymer materials and producing polymer articles therefrom
JP2019220647A (ja) * 2018-06-22 2019-12-26 株式会社アルバック 表面処理方法、プリント配線板の製造方法、および、表面処理装置

Family Cites Families (12)

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US5626820A (en) * 1988-12-12 1997-05-06 Kinkead; Devon A. Clean room air filtering
US5690749A (en) * 1996-03-18 1997-11-25 Motorola, Inc. Method for removing sub-micron particles from a semiconductor wafer surface by exposing the wafer surface to clean room adhesive tape material
WO2003021642A2 (en) * 2001-08-31 2003-03-13 Applied Materials, Inc. Method and apparatus for processing a wafer
ATE346752T1 (de) 2002-06-20 2006-12-15 Obducat Ab Formwerkzeug, verfahren zur herstellung eines formwerkzeugs und durch verwendung des formwerkzeugs gebildetes speichermedium
EP1783158B1 (en) * 2004-10-13 2013-12-11 Central Glass Company, Limited Fluorine-containing polymerizable monomer and polymer compound using same
KR100815372B1 (ko) * 2005-03-31 2008-03-19 삼성전기주식회사 인쇄회로기판용 임프린트 몰드의 이형처리방법
KR100815081B1 (ko) * 2006-09-05 2008-03-20 삼성전기주식회사 스탬퍼 이형처리 방법
KR100763349B1 (ko) 2006-09-14 2007-10-04 삼성전기주식회사 금속 스탬프 제조방법
US20100009290A1 (en) * 2006-12-03 2010-01-14 Central Glass Co., Ltd. Photosensitive Polybenzoxazines and Methods of Making the Same
JP4999069B2 (ja) * 2007-01-23 2012-08-15 株式会社日立製作所 ナノインプリント用スタンパ、ナノインプリント用スタンパの製造方法、およびナノインプリント用スタンパの表面処理剤
US8759957B2 (en) * 2008-02-07 2014-06-24 Sumitomo Bakelite Company Limited Film for use in manufacturing semiconductor device, method for producing semiconductor device and semiconductor device
JP4695679B2 (ja) * 2008-08-21 2011-06-08 株式会社東芝 テンプレートの洗浄方法及びパターン形成方法

Also Published As

Publication number Publication date
KR20110109845A (ko) 2011-10-06
TWI500071B (zh) 2015-09-11
US20110244131A1 (en) 2011-10-06
CN102208335A (zh) 2011-10-05
TW201140653A (en) 2011-11-16
JP2011224965A (ja) 2011-11-10
CN102208335B (zh) 2013-09-18
KR101226289B1 (ko) 2013-01-24

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