JP5689245B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子 Download PDF

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Publication number
JP5689245B2
JP5689245B2 JP2010089842A JP2010089842A JP5689245B2 JP 5689245 B2 JP5689245 B2 JP 5689245B2 JP 2010089842 A JP2010089842 A JP 2010089842A JP 2010089842 A JP2010089842 A JP 2010089842A JP 5689245 B2 JP5689245 B2 JP 5689245B2
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Japan
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layer
nitride semiconductor
semiconductor device
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JP2010089842A
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English (en)
Japanese (ja)
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JP2011222722A5 (enExample
JP2011222722A (ja
Inventor
清水　順
順 清水
慎一 好田
慎一 好田
山田　康博
康博 山田
脇田　尚英
尚英 脇田
石田　昌宏
昌宏 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2010089842A priority Critical patent/JP5689245B2/ja
Priority to US12/961,134 priority patent/US8405067B2/en
Priority to CN2011100420786A priority patent/CN102214701A/zh
Publication of JP2011222722A publication Critical patent/JP2011222722A/ja
Publication of JP2011222722A5 publication Critical patent/JP2011222722A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2010089842A 2010-04-08 2010-04-08 窒化物半導体素子 Active JP5689245B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010089842A JP5689245B2 (ja) 2010-04-08 2010-04-08 窒化物半導体素子
US12/961,134 US8405067B2 (en) 2010-04-08 2010-12-06 Nitride semiconductor element
CN2011100420786A CN102214701A (zh) 2010-04-08 2011-02-17 氮化物半导体元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010089842A JP5689245B2 (ja) 2010-04-08 2010-04-08 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2011222722A JP2011222722A (ja) 2011-11-04
JP2011222722A5 JP2011222722A5 (enExample) 2013-01-31
JP5689245B2 true JP5689245B2 (ja) 2015-03-25

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JP2010089842A Active JP5689245B2 (ja) 2010-04-08 2010-04-08 窒化物半導体素子

Country Status (3)

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US (1) US8405067B2 (enExample)
JP (1) JP5689245B2 (enExample)
CN (1) CN102214701A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011135963A1 (ja) * 2010-04-28 2011-11-03 日本碍子株式会社 エピタキシャル基板およびエピタキシャル基板の製造方法
KR20120027988A (ko) * 2010-09-14 2012-03-22 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법
US9312436B2 (en) * 2011-05-16 2016-04-12 Kabushiki Kaisha Toshiba Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
JP5228122B1 (ja) 2012-03-08 2013-07-03 株式会社東芝 窒化物半導体素子及び窒化物半導体ウェーハ
CN107275425B (zh) * 2013-01-31 2019-10-15 欧司朗光电半导体有限公司 半导体层序列和用于制造半导体层序列的方法
JP2015192004A (ja) * 2014-03-28 2015-11-02 国立大学法人 名古屋工業大学 ドレイン電流密度・相互コンダクタンスを大幅に改善したリセス構造のｍｉｓ型ノーマリオフｈｅｍｔ素子
JP6796467B2 (ja) * 2016-11-30 2020-12-09 住友化学株式会社 半導体基板
CN115084293B (zh) * 2022-05-11 2024-07-12 中山大学 一种异质结光电探测器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3778765B2 (ja) 2000-03-24 2006-05-24 三洋電機株式会社 窒化物系半導体素子およびその製造方法
JP4554803B2 (ja) * 2000-12-04 2010-09-29 独立行政法人理化学研究所 低転位バッファーおよびその製造方法ならびに低転位バッファーを備えた素子
US7115896B2 (en) 2002-12-04 2006-10-03 Emcore Corporation Semiconductor structures for gallium nitride-based devices
JP4725763B2 (ja) * 2003-11-21 2011-07-13 サンケン電気株式会社 半導体素子形成用板状基体の製造方法
JP4379305B2 (ja) * 2004-11-09 2009-12-09 サンケン電気株式会社 半導体装置
JP2007088426A (ja) 2005-08-25 2007-04-05 Furukawa Electric Co Ltd:The 半導体電子デバイス
JP2007250721A (ja) * 2006-03-15 2007-09-27 Matsushita Electric Ind Co Ltd 窒化物半導体電界効果トランジスタ構造
JP4897956B2 (ja) * 2006-12-20 2012-03-14 古河電気工業株式会社 半導体電子デバイス
JP5224311B2 (ja) * 2007-01-05 2013-07-03 古河電気工業株式会社 半導体電子デバイス
JP5309452B2 (ja) 2007-02-28 2013-10-09 サンケン電気株式会社 半導体ウエーハ及び半導体素子及び製造方法
JP2009010142A (ja) * 2007-06-27 2009-01-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体で構成されたｈｆｅｔおよびその製造方法
JP4592742B2 (ja) * 2007-12-27 2010-12-08 Ｄｏｗａエレクトロニクス株式会社 半導体材料、半導体材料の製造方法及び半導体素子
US8067787B2 (en) 2008-02-07 2011-11-29 The Furukawa Electric Co., Ltd Semiconductor electronic device
JP5053220B2 (ja) * 2008-09-30 2012-10-17 古河電気工業株式会社 半導体電子デバイスおよび半導体電子デバイスの製造方法
CN102714162B (zh) * 2009-11-04 2015-04-29 同和电子科技有限公司 第iii族氮化物外延层压基板

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Publication number Publication date
US8405067B2 (en) 2013-03-26
JP2011222722A (ja) 2011-11-04
CN102214701A (zh) 2011-10-12
US20110248241A1 (en) 2011-10-13

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