JP5660748B2 - 低温エアロゾル堆積方法及び物品 - Google Patents

低温エアロゾル堆積方法及び物品 Download PDF

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Publication number
JP5660748B2
JP5660748B2 JP2007273363A JP2007273363A JP5660748B2 JP 5660748 B2 JP5660748 B2 JP 5660748B2 JP 2007273363 A JP2007273363 A JP 2007273363A JP 2007273363 A JP2007273363 A JP 2007273363A JP 5660748 B2 JP5660748 B2 JP 5660748B2
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substrate
aerosol
processing chamber
fine particles
plasma
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JP2007273363A
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Japanese (ja)
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JP2008106363A (ja
JP2008106363A5 (https=
Inventor
ワイ サン ジェニファー
ワイ サン ジェニファー
リャボバ エルミラ
リャボバ エルミラ
サッチ センハ
サッチ センハ
ズー シー
ズー シー
エル カッツ セミョン
エル カッツ セミョン
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2008106363A5 publication Critical patent/JP2008106363A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
JP2007273363A 2006-10-23 2007-10-22 低温エアロゾル堆積方法及び物品 Active JP5660748B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/552,013 US7479464B2 (en) 2006-10-23 2006-10-23 Low temperature aerosol deposition of a plasma resistive layer
US11/552,013 2006-10-23

Publications (3)

Publication Number Publication Date
JP2008106363A JP2008106363A (ja) 2008-05-08
JP2008106363A5 JP2008106363A5 (https=) 2010-12-09
JP5660748B2 true JP5660748B2 (ja) 2015-01-28

Family

ID=38896988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007273363A Active JP5660748B2 (ja) 2006-10-23 2007-10-22 低温エアロゾル堆積方法及び物品

Country Status (6)

Country Link
US (1) US7479464B2 (https=)
EP (1) EP1918420A1 (https=)
JP (1) JP5660748B2 (https=)
KR (1) KR100938474B1 (https=)
CN (1) CN101168842B (https=)
TW (1) TWI368937B (https=)

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DE102008047955A1 (de) * 2008-09-18 2010-04-01 Otto Hauser Verfahren und Vorrichtung zur Erzeugung von Halbleiterschichten
KR101108692B1 (ko) * 2010-09-06 2012-01-25 한국기계연구원 다공성 세라믹 표면을 밀봉하는 치밀한 희토류 금속 산화물 코팅막 및 이의 제조방법
CN103348454B (zh) * 2010-12-01 2016-04-06 株式会社东芝 等离子体蚀刻装置部件及其制造方法
KR101254618B1 (ko) * 2011-02-22 2013-04-15 서울대학교산학협력단 내식성 부재의 세라믹 코팅 방법
JP2012221979A (ja) * 2011-04-04 2012-11-12 Toshiba Corp プラズマ処理装置
FR2983217B1 (fr) 2011-11-25 2015-05-01 Centre De Transfert De Tech Ceramiques C T T C Procede et dispositif de formation d'un depot de materiau(x) fragile(s) sur un substrat par projection de poudre
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
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US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
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US9708713B2 (en) 2013-05-24 2017-07-18 Applied Materials, Inc. Aerosol deposition coating for semiconductor chamber components
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
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US9440886B2 (en) 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
JP6058821B2 (ja) * 2014-01-17 2017-01-11 イオンズ カンパニー リミテッド 複合被膜粒子粒径を有する被膜の形成方法およびこれによる被膜
JP2015140484A (ja) 2014-01-30 2015-08-03 セイコーエプソン株式会社 時計用外装部品、時計用外装部品の製造方法および時計
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US9869013B2 (en) 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
US10196728B2 (en) 2014-05-16 2019-02-05 Applied Materials, Inc. Plasma spray coating design using phase and stress control
US9460898B2 (en) 2014-08-08 2016-10-04 Applied Materials, Inc. Plasma generation chamber with smooth plasma resistant coating
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
TWI733815B (zh) * 2017-05-25 2021-07-21 南韓商Ｋｏｍｉｃｏ有限公司 耐電漿塗層的氣膠沉積塗佈法
KR102089949B1 (ko) * 2017-10-20 2020-03-19 세메스 주식회사 기판 처리 장치 및 기판 처리 장치의 부품
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CN108355855B (zh) * 2018-03-23 2020-05-29 德淮半导体有限公司 增粘剂涂布装置
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JP2023511102A (ja) * 2020-01-23 2023-03-16 ラム リサーチ コーポレーション プラズマ処理チャンバコンポーネント用のイットリウムアルミニウムコーティング
TWI778587B (zh) * 2020-04-30 2022-09-21 日商Ｔｏｔｏ股份有限公司 複合結構物及具備複合結構物之半導體製造裝置
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WO2023042977A1 (ko) * 2021-09-17 2023-03-23 아이원스 주식회사 플라즈마 분말 증착 장치 및 그를 이용한 증착 방법
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Also Published As

Publication number Publication date
JP2008106363A (ja) 2008-05-08
EP1918420A1 (en) 2008-05-07
CN101168842B (zh) 2010-08-25
KR100938474B1 (ko) 2010-01-25
KR20080036530A (ko) 2008-04-28
US20080108225A1 (en) 2008-05-08
TWI368937B (en) 2012-07-21
CN101168842A (zh) 2008-04-30
US7479464B2 (en) 2009-01-20
TW200820325A (en) 2008-05-01

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