JP5659714B2 - ポジ型感放射線性組成物、層間絶縁膜及びその形成方法 - Google Patents

ポジ型感放射線性組成物、層間絶縁膜及びその形成方法 Download PDF

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JP5659714B2
JP5659714B2 JP2010252365A JP2010252365A JP5659714B2 JP 5659714 B2 JP5659714 B2 JP 5659714B2 JP 2010252365 A JP2010252365 A JP 2010252365A JP 2010252365 A JP2010252365 A JP 2010252365A JP 5659714 B2 JP5659714 B2 JP 5659714B2
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compound
mass
sensitive composition
group
formula
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JP2011145653A (ja
Inventor
大吾 一戸
大吾 一戸
政暁 花村
政暁 花村
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JSR Corp
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JSR Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0223—Iminoquinonediazides; Para-quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2010252365A 2009-12-16 2010-11-10 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法 Active JP5659714B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010252365A JP5659714B2 (ja) 2009-12-16 2010-11-10 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009285791 2009-12-16
JP2009285791 2009-12-16
JP2010252365A JP5659714B2 (ja) 2009-12-16 2010-11-10 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法

Publications (2)

Publication Number Publication Date
JP2011145653A JP2011145653A (ja) 2011-07-28
JP5659714B2 true JP5659714B2 (ja) 2015-01-28

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JP2010252365A Active JP5659714B2 (ja) 2009-12-16 2010-11-10 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法

Country Status (4)

Country Link
JP (1) JP5659714B2 (ko)
KR (1) KR20110068924A (ko)
CN (1) CN102156386A (ko)
TW (1) TWI489203B (ko)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3562599B2 (ja) * 1995-08-18 2004-09-08 大日本インキ化学工業株式会社 フォトレジスト組成物
JP4055217B2 (ja) * 1997-02-18 2008-03-05 大日本インキ化学工業株式会社 フッ素系界面活性剤及びそれを使用した組成物
US6156860A (en) * 1997-02-18 2000-12-05 Dainippon Ink And Chemicals, Inc. Surface active agent containing fluorine and coating compositions using the same
JP2000102727A (ja) * 1998-09-29 2000-04-11 Dainippon Ink & Chem Inc フッ素系界面活性剤及びその組成物
JP2001269564A (ja) * 2000-03-27 2001-10-02 Dainippon Ink & Chem Inc フッ素系界面活性剤及びその組成物
JP3800513B2 (ja) * 2001-12-13 2006-07-26 富士写真フイルム株式会社 画像形成材料
KR100942124B1 (ko) * 2002-01-24 2010-02-16 제이에스알 가부시끼가이샤 절연막 형성용 감방사선성 조성물, 절연막 및 표시 소자
JP2004002733A (ja) * 2002-03-28 2004-01-08 Dainippon Ink & Chem Inc コーティング用組成物
JP4586655B2 (ja) * 2005-07-05 2010-11-24 東レ株式会社 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子
KR101428718B1 (ko) * 2007-02-02 2014-09-24 삼성디스플레이 주식회사 감광성 유기물, 이의 도포 방법, 이를 이용한 유기막 패턴형성 방법, 이로써 제조되는 표시 장치
JP2008249867A (ja) * 2007-03-29 2008-10-16 Fujifilm Corp 感光性樹脂組成物、感光性転写材料、離画壁及びその形成方法、カラーフィルタ及びその製造方法、並びに表示装置
WO2009028360A1 (ja) * 2007-08-24 2009-03-05 Toray Industries, Inc. 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子

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Publication number Publication date
TW201129863A (en) 2011-09-01
CN102156386A (zh) 2011-08-17
JP2011145653A (ja) 2011-07-28
KR20110068924A (ko) 2011-06-22
TWI489203B (zh) 2015-06-21

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