JP5659146B2 - プラズマ処理装置及び方法 - Google Patents
プラズマ処理装置及び方法 Download PDFInfo
- Publication number
- JP5659146B2 JP5659146B2 JP2011504181A JP2011504181A JP5659146B2 JP 5659146 B2 JP5659146 B2 JP 5659146B2 JP 2011504181 A JP2011504181 A JP 2011504181A JP 2011504181 A JP2011504181 A JP 2011504181A JP 5659146 B2 JP5659146 B2 JP 5659146B2
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- 238000000034 method Methods 0.000 title claims description 96
- 238000004140 cleaning Methods 0.000 claims description 77
- 238000001816 cooling Methods 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 39
- 238000000151 deposition Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 27
- 238000009826 distribution Methods 0.000 description 21
- 230000003071 parasitic effect Effects 0.000 description 12
- 239000012777 electrically insulating material Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 6
- 239000012809 cooling fluid Substances 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4448108P | 2008-04-12 | 2008-04-12 | |
US61/044,481 | 2008-04-12 | ||
US12/271,616 US20090255798A1 (en) | 2008-04-12 | 2008-11-14 | Method to prevent parasitic plasma generation in gas feedthru of large size pecvd chamber |
US12/271,616 | 2008-11-14 | ||
US13938408P | 2008-12-19 | 2008-12-19 | |
US61/139,384 | 2008-12-19 | ||
PCT/US2009/040105 WO2009126827A2 (en) | 2008-04-12 | 2009-04-09 | Plasma processing apparatus and method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011517121A JP2011517121A (ja) | 2011-05-26 |
JP5659146B2 true JP5659146B2 (ja) | 2015-01-28 |
Family
ID=43511150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011504181A Active JP5659146B2 (ja) | 2008-04-12 | 2009-04-09 | プラズマ処理装置及び方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5659146B2 (ko) |
KR (1) | KR101632271B1 (ko) |
CN (1) | CN101999158A (ko) |
TW (1) | TWI563882B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9793096B2 (en) | 2014-09-12 | 2017-10-17 | Lam Research Corporation | Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity |
CN105794325B (zh) * | 2014-10-30 | 2018-02-23 | 瓦里安半导体设备公司 | 用于对基底进行图案化的系统与方法 |
US10395918B2 (en) | 2015-05-22 | 2019-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for controlling plasma in semiconductor fabrication |
CN111705307A (zh) * | 2020-06-15 | 2020-09-25 | 苏州迈为科技股份有限公司 | 等离子体气相沉积设备 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03123767A (ja) * | 1989-10-05 | 1991-05-27 | Asahi Chem Ind Co Ltd | α・β―不飽和ニトリルの製造法 |
US5273609A (en) * | 1990-09-12 | 1993-12-28 | Texas Instruments Incorporated | Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment |
JP3123767B2 (ja) * | 1991-05-15 | 2001-01-15 | 日本電子株式会社 | 核磁気共鳴測定におけるゴースト信号消去方法 |
US6098568A (en) * | 1997-12-01 | 2000-08-08 | Applied Materials, Inc. | Mixed frequency CVD apparatus |
JP2000260598A (ja) * | 1999-03-12 | 2000-09-22 | Sharp Corp | プラズマ発生装置 |
JP2000323467A (ja) * | 1999-05-11 | 2000-11-24 | Nippon Asm Kk | 遠隔プラズマ放電室を有する半導体処理装置 |
JP3527450B2 (ja) * | 1999-12-22 | 2004-05-17 | 東京エレクトロン株式会社 | 処理装置 |
US6772827B2 (en) * | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
US6797639B2 (en) * | 2000-11-01 | 2004-09-28 | Applied Materials Inc. | Dielectric etch chamber with expanded process window |
TW561515B (en) * | 2001-11-30 | 2003-11-11 | Tokyo Electron Ltd | Processing device, and gas discharge suppressing member |
JP3527914B2 (ja) * | 2002-03-27 | 2004-05-17 | 株式会社ルネサステクノロジ | Cvd装置およびそれを用いたcvd装置のクリーニング方法 |
JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP2006128485A (ja) * | 2004-10-29 | 2006-05-18 | Asm Japan Kk | 半導体処理装置 |
US20060266288A1 (en) * | 2005-05-27 | 2006-11-30 | Applied Materials, Inc. | High plasma utilization for remote plasma clean |
US20080050932A1 (en) * | 2006-08-23 | 2008-02-28 | Applied Materials, Inc. | Overall defect reduction for PECVD films |
-
2009
- 2009-04-09 JP JP2011504181A patent/JP5659146B2/ja active Active
- 2009-04-09 CN CN2009801125995A patent/CN101999158A/zh active Pending
- 2009-04-09 KR KR1020107025494A patent/KR101632271B1/ko active IP Right Grant
- 2009-04-10 TW TW098112045A patent/TWI563882B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20100137565A (ko) | 2010-12-30 |
JP2011517121A (ja) | 2011-05-26 |
KR101632271B1 (ko) | 2016-06-21 |
TW200948219A (en) | 2009-11-16 |
TWI563882B (en) | 2016-12-21 |
CN101999158A (zh) | 2011-03-30 |
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