TWI563882B - Plasma processing apparatus and method - Google Patents

Plasma processing apparatus and method

Info

Publication number
TWI563882B
TWI563882B TW098112045A TW98112045A TWI563882B TW I563882 B TWI563882 B TW I563882B TW 098112045 A TW098112045 A TW 098112045A TW 98112045 A TW98112045 A TW 98112045A TW I563882 B TWI563882 B TW I563882B
Authority
TW
Taiwan
Prior art keywords
processing apparatus
plasma processing
plasma
processing
Prior art date
Application number
TW098112045A
Other languages
English (en)
Chinese (zh)
Other versions
TW200948219A (en
Inventor
Gaku Furuta
Young-Jin Choi
Soo Young Choi
Beom Soo Park
John M White
Suhail Anwar
Robin L Tiner
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/271,616 external-priority patent/US20090255798A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200948219A publication Critical patent/TW200948219A/zh
Application granted granted Critical
Publication of TWI563882B publication Critical patent/TWI563882B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
TW098112045A 2008-04-12 2009-04-10 Plasma processing apparatus and method TWI563882B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US4448108P 2008-04-12 2008-04-12
US12/271,616 US20090255798A1 (en) 2008-04-12 2008-11-14 Method to prevent parasitic plasma generation in gas feedthru of large size pecvd chamber
US13938408P 2008-12-19 2008-12-19

Publications (2)

Publication Number Publication Date
TW200948219A TW200948219A (en) 2009-11-16
TWI563882B true TWI563882B (en) 2016-12-21

Family

ID=43511150

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098112045A TWI563882B (en) 2008-04-12 2009-04-10 Plasma processing apparatus and method

Country Status (4)

Country Link
JP (1) JP5659146B2 (ko)
KR (1) KR101632271B1 (ko)
CN (1) CN101999158A (ko)
TW (1) TWI563882B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9793096B2 (en) 2014-09-12 2017-10-17 Lam Research Corporation Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity
JP6461979B2 (ja) * 2014-10-30 2019-01-30 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 基板をパターニングするシステム及び方法
US10395918B2 (en) * 2015-05-22 2019-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for controlling plasma in semiconductor fabrication
CN111705307A (zh) * 2020-06-15 2020-09-25 苏州迈为科技股份有限公司 等离子体气相沉积设备

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5405492A (en) * 1990-09-12 1995-04-11 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
US6098568A (en) * 1997-12-01 2000-08-08 Applied Materials, Inc. Mixed frequency CVD apparatus
US20010006094A1 (en) * 1999-12-22 2001-07-05 Kenji Amano Vacuum processing apparatus for semiconductor process
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US20050003675A1 (en) * 2000-11-01 2005-01-06 Carducci James D. Dielectric etch chamber with expanded process window
US20050011456A1 (en) * 2001-11-30 2005-01-20 Tokyo Electron Limited Processing apparatus and gas discharge suppressing member
US20060016559A1 (en) * 2004-07-26 2006-01-26 Hitachi, Ltd. Plasma processing apparatus
TWI278530B (en) * 2002-03-27 2007-04-11 Anelva Corp CVD apparatus and cleaning method for CVD apparatus using the same
TW200814157A (en) * 2006-08-23 2008-03-16 Applied Materials Inc Overall defect reduction for PECVD films

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03123767A (ja) * 1989-10-05 1991-05-27 Asahi Chem Ind Co Ltd α・β―不飽和ニトリルの製造法
JP3123767B2 (ja) * 1991-05-15 2001-01-15 日本電子株式会社 核磁気共鳴測定におけるゴースト信号消去方法
JP2000260598A (ja) * 1999-03-12 2000-09-22 Sharp Corp プラズマ発生装置
JP2000323467A (ja) * 1999-05-11 2000-11-24 Nippon Asm Kk 遠隔プラズマ放電室を有する半導体処理装置
JP2006128485A (ja) * 2004-10-29 2006-05-18 Asm Japan Kk 半導体処理装置
US20060266288A1 (en) * 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5405492A (en) * 1990-09-12 1995-04-11 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
US6098568A (en) * 1997-12-01 2000-08-08 Applied Materials, Inc. Mixed frequency CVD apparatus
US20010006094A1 (en) * 1999-12-22 2001-07-05 Kenji Amano Vacuum processing apparatus for semiconductor process
US6772827B2 (en) * 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US20050003675A1 (en) * 2000-11-01 2005-01-06 Carducci James D. Dielectric etch chamber with expanded process window
US20050011456A1 (en) * 2001-11-30 2005-01-20 Tokyo Electron Limited Processing apparatus and gas discharge suppressing member
TWI278530B (en) * 2002-03-27 2007-04-11 Anelva Corp CVD apparatus and cleaning method for CVD apparatus using the same
US20060016559A1 (en) * 2004-07-26 2006-01-26 Hitachi, Ltd. Plasma processing apparatus
TW200814157A (en) * 2006-08-23 2008-03-16 Applied Materials Inc Overall defect reduction for PECVD films

Also Published As

Publication number Publication date
JP5659146B2 (ja) 2015-01-28
CN101999158A (zh) 2011-03-30
KR101632271B1 (ko) 2016-06-21
JP2011517121A (ja) 2011-05-26
KR20100137565A (ko) 2010-12-30
TW200948219A (en) 2009-11-16

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