TW202037750A - 電漿沉積腔室及用以在基板上沉積多層膜之方法 - Google Patents

電漿沉積腔室及用以在基板上沉積多層膜之方法 Download PDF

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TW202037750A
TW202037750A TW108143177A TW108143177A TW202037750A TW 202037750 A TW202037750 A TW 202037750A TW 108143177 A TW108143177 A TW 108143177A TW 108143177 A TW108143177 A TW 108143177A TW 202037750 A TW202037750 A TW 202037750A
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substrate
bias
gas
deposition chamber
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建德 高
泰景 元
卡爾 蘇倫珊
尚傑 亞大夫
李永東
栗田真一
壽永 崔
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美商應用材料股份有限公司
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Abstract

本揭露之多個實施例包含用以在大面積基板上沉積複數個層之方法與設備。在一實施例中，係提供處理腔室。處理腔室包含噴頭與基板支撐組件。噴頭耦接至射頻電源與接地，且包含複數個穿孔氣體擴散構件。複數個電漿施加器設置於噴頭內，其中複數個電漿施加器中的一電漿施加器對應於多個穿孔氣體擴散構件中的一者。進一步地，直流偏壓電源耦接至基板支撐組件。

Description

用於電漿輔助化學氣相沉積之膜應力控制
本揭露之多個實施例大致有關於用以處理大面積基板之方法與設備。更具體地，本揭露之多個實施例係有關於用於設備製造之化學氣相沉積系統及其方法。
在顯示器之製造中，許多製程用來沉積薄膜於基板上，例如液晶顯示器(liquid crystal display; LCD)及/或有機發光二極體(organic light emitting diode; OLED)基板，以形成電子裝置於其上。一般而言，沉積藉由使前驅物氣體引入具有基板之真空腔室來達成，基板設置於溫度控制基板支撐件上。前驅物氣體典型地透過氣體分配板來導向，氣體分配板位於真空腔室之頂部附近。藉由施加來自耦接至腔室之一或更多的射頻源(RF sources)之射頻(radio frequency; RF)電力於設置於腔室中的導電噴頭，真空腔室中的前驅物氣體可被激發(excited)為電漿。被激發的氣體反應形成基板表面上的材料層，基板位於溫度控制基板支撐件上。
傳統上，電漿係使用電容耦合電極配置形成於用於大面積基板之沉積的傳統腔室中。近來，對於多線圈感應耦合電漿(inductively coupled plasma; ICP)配置之興趣已被探討且將其用於這些大面積基板之沉積處理，多線圈感應耦合電漿配置歷來使用於圓基板或晶圓之沉積。在此種使用於大面積高密度電漿化學氣相沉積(high density plasma chemical vapor deposition; HDP-CVD)之感應耦合電漿配置中，射頻電力可能施加於基板之下，為了調節製造出的半導體裝置之個別膜層的本質膜應力。對於完成的裝置來說，較低的本質膜應力是期望的，以降低膜之損傷(例如膜之破裂與剝離)。然而，傳統的感應耦合配置係利用介電材料，介電材料使施加於基板之下的射頻電力得以貫穿電漿處理區且耦接設置於上方的導電噴頭框架。射頻電力貫穿處理區引起膜中直接沉積於噴頭線圈下方的區域與直接沉積於噴頭框架下方的區域之間的應力特性不同。
因此，在所屬技術領域中，用以在大面積高密度電漿氣相沉積期間調節膜應力之改良的方法與設備是有需要的。
本揭露之多個實施例係有關於用以處理大面積基板之方法與設備。更具體地，本揭露之多個實施例係有關於用於設備製造之化學氣相沉積系統及其方法。
在一實施例中，係提供電漿沉積腔室。電漿沉積腔室包含噴頭、複數個介電板、複數個感應線圈與基板支撐組件。噴頭包含複數個穿孔構件，複數個穿孔構件中的每一者耦接至複數個支撐構件中的一或更多者。支撐構件提供前驅物氣體至感應線圈與穿孔構件之間的空間。基板支撐組件包含靜電卡盤組件、絕緣層與基板偏壓板。基板偏壓板耦接至直流電源與低通濾波器(low pass filter)。
在一實施例中，係提供電漿沉積腔室。電漿沉積腔室包含具有複數個穿孔構件之噴頭、對應於複數個穿孔構件之一或更多者的感應耦合器、用以支撐多個穿孔構件中的每一者的複數個支撐構件、與基板支撐組件。複數個支撐構件中的一或更多者提供多個前驅物氣體至感應耦合器與穿孔構件之間的空間。基板支撐組件包含靜電卡盤組件、絕緣層與基板偏壓板。基板偏壓板耦接至直流電源與低通濾波器。
在一實施例中，係提供用以在基板上沉積膜之方法。方法包含使前驅物氣體流向噴頭之複數個氣體空間、改變流入複數個氣體空間中的每一者之前驅物氣體之流動、施加射頻電力至噴頭之多個感應線圈以對前驅物氣體提供能量、使受激的(energized)前驅物氣體流入處理腔室之處理區、以及施加直流偏壓電力至基板支撐件內的偏壓板，以調節基板上的膜沉積。
本揭露之多個實施例包含用以在大面積基板上沉積複數層的方法與設備。在一實施例中，係提供用於電漿沉積之處理腔室。處理腔室包含噴頭與基板支撐組件。噴頭耦接至射頻電源與接地，且包含複數個穿孔氣體擴散構件。複數個電漿施加器(applicators)設置於噴頭內，其中複數個電漿施加器中的一電漿施加器對應於複數個穿孔氣體擴散構件中的一者。進一步地，直流偏壓電源(DC bias power source)耦接至基板支撐組件。
如此處使用之大面積基板係為具有典型地約1平方公尺或更大的表面面積之基板。然而，基板不限於任意特定尺寸或形狀。在一方面中，詞「基板」代表任意多邊形、正方形、長方形、曲線的或其他非圓形的工件，例如玻璃或聚合物基板，玻璃或聚合物基板例如使用於平板顯示器之製造。
此處，為了提升大面積基板在處理區中暴露於氣體之表面的處理均勻性，噴頭裝配以使氣體流過噴頭，且使氣體流入許多獨立控制區塊中的腔室之處理空間。此外，每一區塊裝配有氣室、介於氣室與腔室之處理空間之間的一或更多的穿孔構件、以及專用於一區塊或個別穿孔板的線圈或線圈之一部分。氣室形成於介電窗、穿孔構件與環繞框結構之間。每一個氣室裝配以使處理氣體得以流過和分布，從而造成氣體以相對均勻的流速，或在一些情況下，以經調整的流速，流過穿孔構件且流入處理空間。氣室具有一厚度小於暗區(dark space) (處理氣體在氣室內的壓力下形成的電漿之暗區)厚度的兩倍。感應耦合器，較佳地為線圈的形狀，位於介電窗之後，且透過介電窗、氣室與穿孔構件感應地耦合能量以撞擊且維持處理腔室中的電漿。控制每一區塊的處理氣體之流動以得到均勻或經調整的氣體流，以達成大面積基板上的期望的處理結果。
本揭露之多個實施例包含高密度電漿化學氣相沉積處理腔室，可操作此處理腔室以在基板上形成一或更多的層或膜，包含大面積基板。如此處揭露的處理腔室可適用於運送產生於電漿中的前驅物氣體之受激物質(energized species)。電漿可藉由在真空下使感應耦合能量進入氣體來產生。此處揭露的多個實施例可適用於使用在自加利福尼亞州聖塔克拉拉的應用材料公司(Applied Materials, Inc., Santa Clara, California)之子公司美商業凱科技(AKT America, Inc.)取得之腔室。應理解的是，此處所述的多個實施例也可實行於取自其他製造商之腔室。
第1圖係繪示根據本揭露之一實施例的示例性處理腔室100的剖面圖。基板102設置於腔室本體104內，在基座或基板支撐組件108之基板接收表面120上。基板支撐組件108耦接至軸110，軸110延伸通過腔室本體104。軸110耦接至致動器112，致動器112在腔室本體104內於垂直方向(於Z方向)移動基板支撐組件108。例如，第1圖所示之處理腔室100之基板支撐組件108係繪示為位於處理位置。然而，基板支撐組件108可於Z方向下降至相鄰於傳送口114之位置。在此位置，端效器或機械葉片(未繪示)透過傳送口114插入，且介於基板102與基板接收表面120之間，以將基板102傳送出腔室本體104。
處理腔室100亦包含蓋組件106設置於基板支撐組件108上方。蓋組件106可包含背板122靠在腔室本體104上。蓋組件106包含氣體分配組件或噴頭組件124，裝配以將處理氣體從氣體源運送至處理區126，處理區126介於噴頭組件124與基板102之間。噴頭組件124亦可耦接至清潔氣體(cleaning gas)源，清潔氣體源提供清潔氣體至處理區126，清潔氣體例如含氟(fluorine)氣體。
噴頭組件124亦作為電漿源128。噴頭組件124包含一或更多的感應耦合電漿產生構件或線圈130。一或更多的線圈130中的每一者可為單一線圈130、兩個線圈130或共同運作的多於兩個線圈130，且以下簡要描述為線圈130。一或更多的線圈130中的每一者耦接至電源148與接地133。在一實施例中，電源148係為感應耦合射頻電源(inductively coupled radio frequency (RF) power source)。電源148裝配為以任意合適的頻率與功率位準(power level)提供電力訊號，以藉由噴頭組件124產生電漿。第一電源可包含用以調整線圈130之電氣特性的匹配電路(match circuit)或調諧能力(tuning capability)。
噴頭組件124更包含面板132，面板132具有複數個氣體流擴散器134。多個氣體流擴散器134中的每一者藉由配置為網格狀(grid-like)裝配的複數個支撐構件136加以支撐，且包含可供氣體流過之複數個開孔220 (第2A圖)。多個線圈130中的每一者、或一或更多的線圈130之一部分設置於個別介電板138上或之上。線圈130之一示例更清楚地顯示於第2A圖中，在此示例中，線圈130設置於蓋組件106內的介電板138上。複數個氣體空間140藉由介電板138、氣體流擴散器134與支撐構件136之表面來定義。一或更多的線圈130中的每一者裝配以從電源148接收射頻訊號，且創造電磁場以在氣體空間140中對前驅物氣體提供能量而成為電漿。氣體空間140中受激的處理氣體通過氣體流擴散器134流入處理區126，且朝向基板102。
來自氣體源之處理氣體透過支撐構件136中的多個管道200、205提供給多個氣體空間140中的每一者。在噴頭組件124之不同區塊中控制進入與離開噴頭組件124之氣體的體積或流速。流向多個氣體空間140中的每一者之氣體流可藉由複數個流量控制器來控制，例如多個流量控制器142、143和144，如第1圖所繪示。例如，流向噴頭組件124之外部區塊或邊緣區塊的氣體之流速可藉由多個流量控制器142、143來控制，同時流向噴頭組件之內部區塊或中央區塊的氣體之流速可藉由流量控制器144來控制。當進行腔室清潔時，來自清潔氣體源之清潔氣體可流向多個氣體空間140的每一者，清潔氣體在氣體空間140內受激成為離子、自由基(radicals)或兩者兼具。受激的清潔氣體可流過氣體流擴散器134且流入處理區126，以清潔腔室元件。
第2A圖係為第1圖之蓋組件106的部分放大圖。如前所述，來自氣體源之前驅物氣體透過形成於背板122中的第一管道200流向氣體空間140。多個第一管道200中的每一者耦接至多個第二管道205，第二管道205形成為通過噴頭框架124之多個支撐構件136。第二管道205於開口210將前驅物氣體提供給氣體空間140。在一些實施例中，一些第二管道205可將氣體提供給兩相鄰氣體空間140 (多個第二管道205中的一者以虛像顯示於第2A圖)。在一些實施例中，第二管道205可包含流量限制器215以控制流向氣體空間140之氣體流。為了控制流過的氣體流，可變動流量限制器215之尺寸。例如，多個流量限制器215中的每一者包含用來控制氣體流之特定尺寸(例如直徑)的孔。進一步的，多個流量限制器215中的每一者可依需求改變，以依需求提供較大的孔尺寸或較小的孔尺寸，以控制流過的氣體流。
如第2A圖所示，氣體流擴散器134設置於氣體空間140之下端，且包含延伸通過氣體流擴散器134之複數個開孔220。由於延伸於氣體空間140與處理區126之間的開孔220之直徑，複數個開孔220中的每一者使藉由線圈130供給能量之氣體得以以電漿的形式從氣體空間140以期望的流速流入處理區126。為了透過一或更多的氣體流擴散器134中的多個開孔220中的每一者均衡氣體，開孔220及/或開孔220之行與列可具有不同的尺寸及/或不同的間距。或者，取決於期望的氣體流特性，來自多個開孔220中的每一者的氣體流可能是不均勻的。
支撐構件136藉由緊固件240耦接至背板122，緊固件240例如是螺栓或螺絲。多個支撐構件136中的每一者於介面部245物理性地支撐與分開個別氣體流擴散器134。多個介面部245中的每一者可為壁架(ledge)或架(shelf)支撐氣體流擴散器134之周邊(perimeter)或邊緣。在一些實施例中，介面部245包含可拆裝片250。可拆裝片250藉由緊固件(未繪示)緊固於支撐構件136，緊固件例如是螺栓或螺絲。介面部245的一部分係為L形，同時介面部245的另一部分係為T形。一或更多的密封件265用以密封氣體空間140。例如，密封件265係為彈性材料，例如O形環(O-ring)密封件或聚四氟乙烯(polytetrafluoroethylene; PTFE)填縫劑材料。一或更多的密封件265可提供於支撐構件136與氣體流擴散器134之間。可拆裝片250使支撐氣體流擴散器134被支撐於支撐構件136上。必要時，可拆裝片250可被拆除，以單獨替換每一氣體流擴散器134。
此外，多個支撐構件136中的每一者利用從其延伸的架270支撐介電板138 (繪示於第2A圖)。在噴頭組件124 / 電漿源128之多個實施例中，相較於整個噴頭組件124 / 電漿源128之表面面積，介電板138之側表面面積(X-Y平面)較小。為了支撐介電板138，架270係被利用。多個介電板138之側表面面積降低使介電材料得以被使用為在氣體空間140及處理區126中的真空環境及電漿與大氣環境之間的物理阻障物，相鄰的線圈130典型地位於大氣環境中，而不用基於支撐大氣壓力負載之大面積而施加大應力於其中。
在處理期間，密封件265被用來密封空間275 (於大氣壓力或接近大氣壓力)使其和氣體空間140 (於毫托(millitorr)或更低的範圍之低大氣壓力)隔開。介面構件280顯示為自支撐構件136延伸，且緊固件285被用來固定介電板138使其抵靠密封件265與架270，即為使介電板138推向密封件265與架270。密封件265亦可被用來密封氣體流擴散器134之外周邊與支撐構件136之間的一空間。
用於噴頭組件124 / 電漿源128之材料可基於電氣特性、強度與化學穩定性中的一或更多者來選擇。線圈130由導電材料製成。背板122與支撐構件136由能夠支撐被支撐元件之重量與大氣壓力負載的材料製成，可包含金屬或其他類似材料。背板122與支撐構件136可由非磁性材料製成(例如，非順磁性或非鐵磁性材料)，例如鋁材料。可拆裝片250亦由非磁性材料，例如金屬材料(metallic material)，所形成，例如鋁或陶瓷材料(例如氧化鋁(alumina; Al2 O3 )或藍寶石(sapphire; Al2 O3 ))。氣體流擴散器134由陶瓷材料製成，例如石英(quartz)、氧化鋁或其他類似材料。介電板138由石英、氧化鋁或藍寶石材料製成。
在一些實施例中，噴頭組件之多個支撐構件136包含一或更多的冷卻劑通道255於其中。一或更多的冷卻劑通道255係流體耦接至流體源260，流體源260裝配以將冷卻劑介質提供給冷卻劑通道255。
第2B圖係繪示蓋組件106中位於介電板138上的線圈130之一實施例的俯視圖。在一實施例中，可使用第2B圖所示之線圈130裝配，以使繪示之線圈裝配分別形成於多個介電板138中的每一者上，以在整個噴頭組件124上使每一平面線圈以期望的圖案和相鄰配置的線圈130串聯連接。線圈130包含導體圖案290，導體圖案290係為長方螺旋形。然而，導體圖案之其他型態也是可預期的。電連接包含電輸入端295A與電輸出端295B。噴頭組件124之一或更多的線圈130中的每一者串聯及/或並聯連接。
第3圖係繪示噴頭組件124之面板132之一實施例的仰視圖。根據本揭露之一實施例，第3圖包含在處理腔室100內處理的期間，基板接收表面120上的基板102之位置相對於噴頭組件124之疊加輪廓。如上所述，噴頭組件124裝配以包含一或更多的氣體流擴散器134，一或更多的氣體流擴散器134被配置為網格狀框架之複數個支撐構件136支撐與分開。透過穿過每一氣體流擴散器134之複數個開孔220，氣體從氣體空間140流入基板102上的處理區126。噴頭組件124內的線圈130、氣體空間140與氣體流擴散器134之數目取決於基板102上用於膜沉積之總面積。
第4圖係繪示根據本揭露之一實施例的處理腔室400的剖面圖。除了如上所述之處理腔室100之特徵，處理腔室400還包含具有靜電卡盤組件158、基板偏壓板160與絕緣層162之基板支撐組件108。
在一實施例中，靜電卡盤組件158設置於基板支撐組件108之最高位置，以使基板接收表面120對應於靜電卡盤組件158之上表面。靜電卡盤組件158耦接至靜電卡盤電源152，靜電卡盤電源152設置於腔室本體104之外部。靜電卡盤電源可為任意合適的電源供應，裝配以在處理期間提供期望的電壓以用於基板102之靜電吸附。此外，靜電卡盤組件158可包含兩個或更多的電極，兩個或更多的電極可選擇設置為任意合適的配置以依吸附特定基板裝置。例如，靜電卡盤組件158可包含兩個電極，配置為長方螺旋，一個電極包圍另外一個。在另一示例中，靜電卡盤組件158可包含兩個交錯的電極，形成圓形。靜電卡盤組件158中的每一個電極可藉由靜電卡盤電源152分開供電，從而使電極可以不同的極性通電。
絕緣層162設置於基板支撐組件108之最底部位置。絕緣層162可以介電材料形成，介電材料例如是二氧化矽(silicon dioxide; SiO2 )。絕緣層162屏蔽基板偏壓板160所形成的電場往腔室本體104之視線(line-of-sight)路徑，從而使基板偏壓板160與腔室本體104之間電弧的可能性降至最低。
基板偏壓板160設置於靜電卡盤組件158與絕緣層162之間。基板偏壓板更耦接至基板偏壓電源156與低通濾波器154，基板偏壓電源156與低通濾波器154配置為線性連接(linear connection)。如第4圖所示，基板偏壓電源156與低通濾波器154可設置於腔室本體104之外部。為了從處理區126中的電漿提取離子且朝向基板支撐組件108上的基板102之期望的區域，基板偏壓板160與基板偏壓電源156裝配以從基板102下方提供電偏壓。當使用於處理期間，朝向基板102之期望的區域提取電漿離子會調節膜沉積，如此一來可控制膜特性(例如膜厚度與膜應力)。例如，藉由調整供應至基板表面的某些區的基板偏壓電力，可調節從電漿提取的離子量(例如密度)，從而得以控制基板102上沉積的膜之張應力(tensile stress)與壓縮應力(compressive stress)特性。
基板偏壓電源156係為直流電源(direct current (DC) type power source)，以正極性或負極性供應直流電壓。在一實施例中，基板偏壓電源156裝配以供應恆定直流偏壓(constant DC bias)。在另一實施例中，基板偏壓電源156裝配以供應脈衝直流偏壓(pulsed DC bias)。低通濾波器154可裝配以避免來自電源148的射頻訊號和基板支撐組件108耦接且傳遞至基板偏壓電源156。
第5圖係為使用第4圖之處理腔室400進行大面積膜沉積之期間，控制本質膜應力之方法500的流程圖。於操作510，基板102被傳送至基板支撐組件108之基板接收表面120上。基板102可藉由合適的方法被傳送進入處理腔室100且傳送至基板支撐組件108上，方法例如藉由通過傳送口114之機械葉片(傳送口114位於腔室本體104之側壁)。然後，致動器112可將基板支撐組件108調整為處理位置，如第1圖所示。
於操作520，來自氣體源之前驅物氣體透過多個管道200、205提供給氣體空間140，多個管道200、205設置於支撐構件136。前驅物氣體之流動可藉由數個流量控制器142、143加以控制，數個流量控制器142、143控制提供給每一氣體空間140之氣體的量與流速。
於操作530，電源148將射頻電力供應給蓋組件106內的感應耦合線圈130。射頻電力可以合適的頻率或功率位準供應，以產生電漿。例如，可施加56千瓦(kW)之射頻電力與13.56百萬赫(MHz)之訊號頻率。在另一示例中，可施加56千瓦之電力與2百萬赫(MHz)頻率射頻訊號。多個線圈130中的每一者接收電源148供應之射頻電力，且創造電磁場，電磁場對氣體空間140內的前驅物氣體提供能量。然後，受激的前驅物氣體流過複數個開孔220且進入處理區126朝向基板102，複數個開孔220設置為通過氣體流擴散器134。
於操作540，當受激處理氣體流入處理區126，直流偏壓施加於基板偏壓板160。直流偏壓係由基板偏壓電源156供應，且由低通濾波器154過濾。直流偏壓輸出可為脈衝的或恆定的，具有正電位(positive potential)或負電位(negative potential)。可以任意合適的脈衝率(pulse rate)或功率位準供應直流偏壓至基板偏壓板160。例如，可供應具有約50千赫茲(kHz)至約500千赫茲之脈衝率的脈衝直流偏壓，例如約100千赫茲至約400千赫茲。例如，可供應具有約250千赫茲至約300千赫茲之脈衝率的脈衝直流偏壓。脈衝或恆定直流偏壓係提供為約50瓦特(W)至約1000瓦特的功率位準範圍內，例如約250瓦特至約750瓦特。例如，直流偏壓電力供應為約400瓦特至約600瓦特之功率位準。
藉由創造局部電容耦合電場(local capacitively-coupled electric field)，應用於整個基板偏壓板160之直流電力使電漿偏向基板102，從而增加基板表面上的離子撞擊(ion bombardment)，且使具有調節的本質膜應力之膜層得以形成。在利用多線圈感應耦合電漿系統之大面積高密度電漿化學氣相沉積的期間，操作540中直流基板偏壓之使用使本質膜應力性質得以改變。尤其，直流偏壓使大面積基板膜層得以形成，且具有整個沉積膜層降低且均勻的膜應力位準。
膜應力控制之其他方法不涉及基板偏壓，或涉及將射頻基板偏壓電力應用於調節基板表面上的離子撞擊。然而，當施行於具有多線圈感應耦合電漿系統之高密度電漿腔室中時，這些方法導致沉積的膜層具有不被期望的膜應力特性。例如，當未施加基板偏壓時，沉積的膜層傾向展現不被期望的高張膜應力位準(high tensile film stress levels)。
或者，當施加射頻基板偏壓，沉積的膜層傾向展現不均勻的膜應力位準。尤其，基板中直接設置於多線圈感應耦合電漿系統之線圈下方的區域之膜應力傾向藉由射頻偏壓電力來調節，同時基板中設置於噴頭結構框架下方的區域在很大的程度上不受影響。此不均勻性是因為射頻偏壓電力貫穿電漿且耦接至設置於上方的接地噴頭結構框架。從而，當施加射頻基板偏壓時，膜應力取決於位置。
相對地，當施加直流基板偏壓，膜應力之調節並非取決於位置。更確切地說，所得到的膜層展現均勻的膜應力性質，因為直流偏壓電力不會耦接至上方的接地噴頭結構框架。從而，電漿鞘(plasma sheath)被直流偏壓電力影響，且噴頭結構框架下方的區域與多線圈感應耦合電漿系統之線圈下方的區域皆被實質均等地調節。
本揭露之多個實施例包含能夠在大面積基板上形成一或更多的膜層之方法與設備。電漿均勻性以及氣體(或前驅物)流動係藉由個別氣體流擴散器134、線圈130及/或多個流量控制器142、143和144之裝配之組合加以控制。膜應力均勻性係藉由將直流基板偏壓應用於基板支撐組件108內的偏壓基板平臺(即基板偏壓板160)加以控制。
綜上所述，雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100:處理腔室 102:基板 104:腔室本體 106:蓋組件 108:基板支撐組件 110:軸 112:致動器 114:傳送口 120:基板接收表面 122:背板 124:噴頭組件 126:處理區 128:電漿源 130:線圈 132:面板 133:接地 134:氣體流擴散器 136:支撐構件 138:介電板 140:氣體空間 142,143,144:流量控制器 148:電源 152:靜電卡盤電源 154:低通濾波器 156:基板偏壓電源 158:靜電卡盤組件 160:基板偏壓板 162:絕緣層 200,205:管道 210:開口 215:流量限制器 220:開孔 240:緊固件 245:介面部 250:可拆裝片 255:冷卻劑通道 260:流體源 265:密封件 270:架 275:空間 280:介面構件 285:緊固件 290:導體圖案 295A:電輸入端 295B:電輸出端 400:處理腔室 500:方法 510,520,530,540:操作 X,Y,Z:方向
為了使本揭露之上述特徵可被詳細理解，參照多個實施例可對以上簡要說明之本揭露有更加具體的描述，其中一些實施例繪示於附圖中。然而，應注意的是，附圖僅為本揭露之典型實施例，因此不應被理解為對本揭露之保護範圍之侷限，且本揭露可以允許其他等效實施例。 第1圖係繪示根據本揭露之一實施例的處理腔室的剖面圖； 第2A圖係繪示第1圖之蓋組件的部分放大圖； 第2B圖係繪示線圈之一實施例的俯視圖； 第3圖係繪示根據本揭露之一實施例的噴頭之面板的仰視圖，具有基板相對於噴頭之疊加輪廓； 第4圖係繪示根據本揭露之另一實施例的處理腔室的剖面圖；及 第5圖係繪示第4圖中沉積的膜之形成之操作流程圖。
為了便於理解，在可能的情況下使用相同的元件符號來代表圖中共有的相同元件。可預期的是，在一實施例中揭露的元件可以有利地用於其他實施例而無需進一步描述。
100:處理腔室
102:基板
104:腔室本體
106:蓋組件
108:基板支撐組件
110:軸
112:致動器
114:傳送口
120:基板接收表面
122:背板
124:噴頭組件
126:處理區
128:電漿源
130:線圈
132:面板
133:接地
134:氣體流擴散器
136:支撐構件
138:介電板
140:氣體空間
142,143,144:流量控制器
148:電源
X,Y,Z:方向

Claims (20)

  1. 一種電漿沉積腔室，包含： 一噴頭，具有複數個穿孔構件，該複數個穿孔構件中的每一者耦接至複數個支撐構件中的一或更多者； 複數個介電板，該複數個介電板中的每一者對應於該複數個穿孔構件中的一者； 複數個感應線圈，其中該複數個感應線圈中的一者對應於該複數個介電板中的一者，其中該複數個支撐構件提供多個前驅物氣體給該複數個感應線圈與該複數個穿孔構件之間形成的一空間；以及 一基板支撐組件，該基板支撐組件包含： 一靜電卡盤組件，耦接至一靜電卡盤電源，該靜電卡盤組件設置於該基板支撐組件之一最高位置； 一絕緣層，設置於該基板支撐組件之一最底部位置；及 一基板偏壓板，耦接至一直流電源與一低通濾波器且配置為一線性連接，該基板偏壓板設置於該靜電卡盤組件與該絕緣層之間。
  2. 如請求項1所述之電漿沉積腔室，其中該複數個支撐構件包含多個管道形成於該複數個支撐構件中，用以供該些前驅物氣體流動。
  3. 如請求項2所述之電漿沉積腔室，其中該複數個支撐構件更包含冷卻劑通道形成於該複數個支撐構件中，用以供一冷卻劑流動。
  4. 如請求項1所述之電漿沉積腔室，更包含一介電板，該介電板和該複數個感應線圈中的每一者連接，該介電板係為該空間之一側之邊界。
  5. 如請求項1所述之電漿沉積腔室，其中該複數個支撐構件配置為一網格狀裝配以使該複數個穿孔構件、該複數個介電板與該複數個感應線圈中的每一者分開。
  6. 如請求項1所述之電漿沉積腔室，其中該複數個感應線圈中的每一者耦接至一射頻電源。
  7. 如請求項1所述之電漿沉積腔室，其中該直流電源裝配以提供一正極性或一負極性之一恆定直流偏壓至該基板偏壓板。
  8. 如請求項7所述之電漿沉積腔室，其中該直流偏壓係提供為約50瓦特(W)至約1000瓦特之一功率位準(power level)。
  9. 如請求項1所述之電漿沉積腔室，其中該直流電源裝配以提供一正極性或一負極性之一脈衝直流偏壓至該基板偏壓板。
  10. 如請求項9所述之電漿沉積腔室，其中該脈衝直流偏壓係以約50千赫茲(kHz)至約500千赫茲之一頻率脈衝。
  11. 如請求項1所述之電漿沉積腔室，其中該低通濾波器避免供應給該複數個感應線圈之射頻電力和該直流電源耦接。
  12. 一種電漿沉積腔室，包含： 一噴頭，具有複數個穿孔構件； 一感應耦合器，對應於該複數個穿孔構件中的一或更多者； 複數個支撐構件，用以支撐該複數個穿孔構件中的每一者，其中該複數個支撐構件中的一或更多者提供多個前驅物氣體給該感應耦合器與該複數個穿孔構件之間形成的一空間；以及 一基板支撐組件，該基板支撐組件包含： 一靜電卡盤組件，耦接至一靜電卡盤電源，該靜電卡盤組件設置於該基板支撐組件之一最高位置； 一絕緣層，設置於該基板支撐組件之一最底部位置；及 一基板偏壓板，耦接至一直流電源與一低通濾波器，且該直流電源與該低通濾波器配置於一線性連接(linear connection)，該基板偏壓板設置於該靜電卡盤組件與該絕緣層之間。
  13. 如請求項12所述之電漿沉積腔室，其中該直流電源裝配以提供一正極性或一負極性之一恆定直流偏壓至該偏壓板。
  14. 如請求項12所述之電漿沉積腔室，其中該直流電源裝配以提供一正極性或一負極性之一脈衝直流偏壓至該偏壓板。
  15. 如請求項12所述之電漿沉積腔室，其中該複數個穿孔構件與該複數個支撐構件中的每一者包含一介面部，且每一個該介面部包含一或更多的可拆裝片。
  16. 一種用以在一基板上沉積多層膜之方法，包含： 使一前驅物氣體流動至一處理腔室內的一噴頭之複數個氣體空間，該複數個氣體空間中的每一者包含一穿孔構件與一感應線圈和各自的該氣體空間電力通訊(electrical communication)； 改變流入該複數個氣體空間中的每一者之該前驅物氣體之流動； 施加一射頻電力至該些感應線圈，以產生一電磁場，且對該複數個氣體空間中的每一者內的該前驅物氣體提供能量； 使受激的(energized)該前驅物氣體流入該處理腔室之一處理區中；以及 施加一直流偏壓電力至一基板支撐件內的一偏壓板，以調節沉積於該基板上的該些膜。
  17. 如請求項16所述之方法，其中該噴頭包含多個區塊，且該些區塊中的每一者內的氣體流係為不同的。
  18. 如請求項18所述之方法，其中該偏壓板耦接至一直流電源。
  19. 如請求項16所述之方法，其中該直流偏壓電力係為一正極性或一負極性之一恆定直流偏壓。
  20. 如請求項16所述之方法，其中該直流偏壓電力係為一正極性或一負極性之一脈衝直流偏壓。
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