JP5657563B2 - オプトエレクトロニクス投影装置およびその製造方法 - Google Patents

オプトエレクトロニクス投影装置およびその製造方法 Download PDF

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Publication number
JP5657563B2
JP5657563B2 JP2011541081A JP2011541081A JP5657563B2 JP 5657563 B2 JP5657563 B2 JP 5657563B2 JP 2011541081 A JP2011541081 A JP 2011541081A JP 2011541081 A JP2011541081 A JP 2011541081A JP 5657563 B2 JP5657563 B2 JP 5657563B2
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semiconductor body
contact layer
projection device
region
layer
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JP2012513667A (ja
JP2012513667A5 (enExample
Inventor
マルム ノーヴィン フォン
マルム ノーヴィン フォン
クラウス シュトロイベル
クラウス シュトロイベル
パトリック ローデ
パトリック ローデ
カール エンゲル
カール エンゲル
ルッツ ヘッペル
ルッツ ヘッペル
ユルゲン ムースブルガー
ユルゲン ムースブルガー
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
JP2011541081A 2008-12-23 2009-11-27 オプトエレクトロニクス投影装置およびその製造方法 Expired - Fee Related JP5657563B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008062933.2 2008-12-23
DE102008062933.2A DE102008062933B4 (de) 2008-12-23 2008-12-23 Optoelektronische Projektionsvorrichtung
PCT/DE2009/001694 WO2010072191A1 (de) 2008-12-23 2009-11-27 Optoelektronische projektionsvorrichtung

Publications (3)

Publication Number Publication Date
JP2012513667A JP2012513667A (ja) 2012-06-14
JP2012513667A5 JP2012513667A5 (enExample) 2012-12-13
JP5657563B2 true JP5657563B2 (ja) 2015-01-21

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JP2011541081A Expired - Fee Related JP5657563B2 (ja) 2008-12-23 2009-11-27 オプトエレクトロニクス投影装置およびその製造方法

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Country Link
US (1) US8716724B2 (enExample)
EP (1) EP2368269B1 (enExample)
JP (1) JP5657563B2 (enExample)
KR (1) KR101601348B1 (enExample)
CN (1) CN102265399B (enExample)
DE (1) DE102008062933B4 (enExample)
WO (1) WO2010072191A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10157898B2 (en) 2007-01-22 2018-12-18 Cree, Inc. Illumination devices, and methods of fabricating same
US10854584B2 (en) 2012-04-09 2020-12-01 Cree, Inc. Wafer level packaging of light emitting diodes (LEDs)
US11251348B2 (en) 2011-06-24 2022-02-15 Creeled, Inc. Multi-segment monolithic LED chip
US12002915B2 (en) 2011-06-24 2024-06-04 Creeled, Inc. Multi-segment monolithic LED chip

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DE102010025320B4 (de) 2010-06-28 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
TWI557934B (zh) * 2010-09-06 2016-11-11 晶元光電股份有限公司 半導體光電元件
DE102011003684A1 (de) * 2011-02-07 2012-08-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchip
US9362455B2 (en) * 2011-02-24 2016-06-07 Cree, Inc. Semiconductor light emitting diodes having multiple bond pads and current spreading structures
US8492182B2 (en) 2011-04-29 2013-07-23 Osram Opto Semiconductors Gmbh Method for the producing of a light-emitting semiconductor chip, method for the production of a conversion die and light-emitting semiconductor chip
KR101868537B1 (ko) * 2011-11-07 2018-06-19 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광 소자 패키지
DE102011056888A1 (de) 2011-12-22 2013-06-27 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
DE102012101892B4 (de) 2012-03-06 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement und Anzeigevorrichtung damit sowie Verfahren zur Herstellung eines Wellenlängenkonversionselements
DE102012105176B4 (de) 2012-06-14 2021-08-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
DE102012112302A1 (de) 2012-12-14 2014-06-18 Osram Opto Semiconductors Gmbh Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung
DE102012112530A1 (de) * 2012-12-18 2014-06-18 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102013102667A1 (de) * 2013-03-15 2014-10-02 Osram Opto Semiconductors Gmbh Anzeigevorrichtung
KR102098110B1 (ko) * 2013-04-11 2020-04-08 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
DE102013104046A1 (de) * 2013-04-22 2014-10-23 Osram Opto Semiconductors Gmbh Optische Anordnung und Anzeigegerät
KR102098135B1 (ko) * 2013-07-12 2020-04-08 엘지이노텍 주식회사 발광소자
DE102013111918B4 (de) 2013-10-29 2020-01-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
CN105684171B (zh) 2013-10-29 2018-09-07 欧司朗光电半导体有限公司 波长转换元件、制造方法和具有波长转换元件的发光半导体部件
DE102013112881A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102014100542A1 (de) 2014-01-20 2015-07-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer lateral strukturierten Schicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht
DE102014102029A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
JP6425921B2 (ja) * 2014-06-12 2018-11-21 株式会社ジャパンディスプレイ 画像表示装置
DE102014108373A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR102212666B1 (ko) 2014-06-27 2021-02-05 엘지이노텍 주식회사 발광소자
TWI625868B (zh) 2014-07-03 2018-06-01 晶元光電股份有限公司 光電元件及其製造方法
DE102015103055A1 (de) * 2014-12-04 2016-06-09 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
JP6156402B2 (ja) * 2015-02-13 2017-07-05 日亜化学工業株式会社 発光装置
DE102015122627A1 (de) * 2015-05-28 2016-12-01 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung und Tiefenerfassungssystem
KR102480220B1 (ko) 2016-04-08 2022-12-26 삼성전자주식회사 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
CN106131519A (zh) * 2016-06-15 2016-11-16 联想(北京)有限公司 一种信息处理方法及电子设备
DE102016116986B4 (de) * 2016-09-09 2025-07-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement zur Darstellung eines Piktogramms und Verfahren zur Herstellung eines Bauelements
DE102016221481B4 (de) * 2016-11-02 2021-09-16 Siemens Healthcare Gmbh Strahlungsdetektor mit einer Zwischenschicht
DE102016123013A1 (de) * 2016-11-29 2018-05-30 Osram Opto Semiconductors Gmbh Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte
DE102017102247A1 (de) 2017-02-06 2018-08-09 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Herstellungsverfahren hierfür
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
KR102601620B1 (ko) 2017-08-03 2023-11-15 크리엘이디, 인크. 고밀도 픽셀화된 led 칩 및 칩 어레이 장치, 그리고 그 제조 방법
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
EP4052296A1 (en) 2019-10-29 2022-09-07 Creeled, Inc. Texturing for high density pixelated-led chips
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10157898B2 (en) 2007-01-22 2018-12-18 Cree, Inc. Illumination devices, and methods of fabricating same
US10586787B2 (en) 2007-01-22 2020-03-10 Cree, Inc. Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same
US11251348B2 (en) 2011-06-24 2022-02-15 Creeled, Inc. Multi-segment monolithic LED chip
US12002915B2 (en) 2011-06-24 2024-06-04 Creeled, Inc. Multi-segment monolithic LED chip
US10854584B2 (en) 2012-04-09 2020-12-01 Cree, Inc. Wafer level packaging of light emitting diodes (LEDs)
US11837585B2 (en) 2012-04-09 2023-12-05 Creeled, Inc. Wafer level packaging of light emitting diodes (LEDs)

Also Published As

Publication number Publication date
DE102008062933B4 (de) 2021-05-12
DE102008062933A1 (de) 2010-07-01
EP2368269B1 (de) 2016-03-16
KR101601348B1 (ko) 2016-03-08
US20110241031A1 (en) 2011-10-06
JP2012513667A (ja) 2012-06-14
EP2368269A1 (de) 2011-09-28
WO2010072191A1 (de) 2010-07-01
KR20110099753A (ko) 2011-09-08
CN102265399A (zh) 2011-11-30
CN102265399B (zh) 2014-05-28
US8716724B2 (en) 2014-05-06

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