JP2012513667A - オプトエレクトロニクス投影装置 - Google Patents
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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Abstract
【選択図】図3
Description
Claims (15)
- 動作時に、所定のイメージ(10)を生成するオプトエレクトロニクス投影装置であって、
電磁放射を発生させるのに適している活性層(101)と放射出口面(102)とを有する半導体ボディ(1)、を備えており、前記半導体ボディ(1)が前記投影装置のイメージ生成要素であり、
前記半導体ボディ(1)との電気接続を形成するため、第1のコンタクト層(2)および第2のコンタクト層(3)が、前記半導体ボディ(1)の裏面(103)に配置されており、かつ分離層(4)によって互いに電気的に絶縁されており、前記裏面(103)が前記放射出口面(102)とは反対側に位置している、
オプトエレクトロニクス投影装置。 - 前記第2のコンタクト層(3)がピクセル(301)の形に構造化されており、前記投影装置の動作時、前記ピクセル(301)が投影される結果として、前記所定のイメージ(10)の少なくとも一部が生じる、
請求項1に記載のオプトエレクトロニクス投影装置。 - 前記ピクセル(301)が2次元のセグメントディスプレイとして配置されている、
請求項2に記載のオプトエレクトロニクス投影装置。 - 前記ピクセル(301)が、n行およびm列からなる2次元の規則的な行列に配置されている、
請求項2に記載のオプトエレクトロニクス投影装置。 - 前記第2のコンタクト層(3)が、絵文字、文字、またはレタリングの形の少なくとも1つの構造(301b)を有する、
請求項1に記載のオプトエレクトロニクス投影装置。 - 前記半導体ボディ(1)が、パターンを形成するように構造化されており、前記投影装置の動作時、前記パターンが投影される結果として、前記所定のイメージ(10)の少なくとも一部が生じる、
請求項1から請求項5のいずれかに記載のオプトエレクトロニクス投影装置。 - 前記第1のコンタクト層(2)が、前記半導体ボディ(1)とは反対側である前記第2のコンタクト層(3)の面、に配置されており、前記第2のコンタクト層(3)が複数の開口(302)を有し、前記第1のコンタクト層(2)が前記開口(302)の中を前記半導体ボディ(1)の方に延在している、
請求項1から請求項6のいずれかに記載のオプトエレクトロニクス投影装置。 - 前記第1のコンタクト層(2)の部分領域(203)が、前記裏面(103)から、前記活性層(101)における孔(104)の中を、前記放射出口面(102)に向かう方向に延在している、
請求項1から請求項7のいずれかに記載のオプトエレクトロニクス投影装置。 - 前記第1のコンタクト層(2)が、前記放射出口面(102)に面している前記活性層(101)の側において前記半導体ボディ(1)との電気接続を形成するのに適している少なくとも1つの電気接続領域(201)、を有する、
請求項1から請求項8のいずれかに記載のオプトエレクトロニクス投影装置。 - 前記第1のコンタクト層(2)が、構造(202)の形に構造化されており、かつ複数の電気接続領域(201)を有し、構造(202)それぞれが接続領域(201)に導電接続されている、
請求項1から請求項9のいずれかに記載のオプトエレクトロニクス投影装置。 - 前記第2のコンタクト層(3)が、ピクセル(301)の形に構造化されており、かつ複数の電気接続パッド(303)を有し、ピクセル(301)それぞれが接続パッド(303)に導電接続されている、
請求項1から請求項10のいずれかに記載のオプトエレクトロニクス投影装置。 - 前記放射出口面(102)上に部分的に放射取り出し構造(11)が配置されている、
請求項1から請求項11のいずれかに記載のオプトエレクトロニクス投影装置。 - 前記半導体ボディ(1)の下流、前記放射出口面(102)上に光学要素(5)が配置されている、
請求項1から請求項12のいずれかに記載のオプトエレクトロニクス投影装置。 - 前記第1のコンタクト層(2)もしくは前記第2のコンタクト層(3)またはその両方が、前記電磁放射の一部を前記放射出口面(102)の方向に反射し、前記一部が、前記活性層(101)から前記裏面(103)に向かう方向に放出された部分である、
請求項1から請求項13のいずれかに記載のオプトエレクトロニクス投影装置。 - 前記投影装置が電子装置(6)、特に、携帯電話、携帯情報端末(PDA)、ノート型コンピュータ、デスクトップコンピュータ、時計、または目覚し時計、の一部である、
請求項1から請求項14のいずれかに記載のオプトエレクトロニクス投影装置。
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DE102008062933.2 | 2008-12-23 | ||
DE102008062933.2A DE102008062933B4 (de) | 2008-12-23 | 2008-12-23 | Optoelektronische Projektionsvorrichtung |
PCT/DE2009/001694 WO2010072191A1 (de) | 2008-12-23 | 2009-11-27 | Optoelektronische projektionsvorrichtung |
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JP2012513667A5 JP2012513667A5 (ja) | 2012-12-13 |
JP5657563B2 JP5657563B2 (ja) | 2015-01-21 |
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US (1) | US8716724B2 (ja) |
EP (1) | EP2368269B1 (ja) |
JP (1) | JP5657563B2 (ja) |
KR (1) | KR101601348B1 (ja) |
CN (1) | CN102265399B (ja) |
DE (1) | DE102008062933B4 (ja) |
WO (1) | WO2010072191A1 (ja) |
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JP2016149477A (ja) * | 2015-02-13 | 2016-08-18 | 日亜化学工業株式会社 | 発光装置 |
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DE102008062933B4 (de) | 2021-05-12 |
EP2368269A1 (de) | 2011-09-28 |
KR101601348B1 (ko) | 2016-03-08 |
DE102008062933A1 (de) | 2010-07-01 |
WO2010072191A1 (de) | 2010-07-01 |
KR20110099753A (ko) | 2011-09-08 |
EP2368269B1 (de) | 2016-03-16 |
US8716724B2 (en) | 2014-05-06 |
CN102265399A (zh) | 2011-11-30 |
CN102265399B (zh) | 2014-05-28 |
JP5657563B2 (ja) | 2015-01-21 |
US20110241031A1 (en) | 2011-10-06 |
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