JP5654760B2 - 光素子 - Google Patents

光素子 Download PDF

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Publication number
JP5654760B2
JP5654760B2 JP2010044838A JP2010044838A JP5654760B2 JP 5654760 B2 JP5654760 B2 JP 5654760B2 JP 2010044838 A JP2010044838 A JP 2010044838A JP 2010044838 A JP2010044838 A JP 2010044838A JP 5654760 B2 JP5654760 B2 JP 5654760B2
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JP
Japan
Prior art keywords
semiconductor layer
light
optical element
optical
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010044838A
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English (en)
Japanese (ja)
Other versions
JP2011181708A5 (enExample
JP2011181708A (ja
Inventor
尾内　敏彦
敏彦 尾内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2010044838A priority Critical patent/JP5654760B2/ja
Priority to EP20110153651 priority patent/EP2363893A2/en
Priority to US13/031,014 priority patent/US8759771B2/en
Priority to RU2011107929/28A priority patent/RU2462790C1/ru
Priority to CN201110049029.5A priority patent/CN102194914B/zh
Priority to KR20110018327A priority patent/KR101385166B1/ko
Publication of JP2011181708A publication Critical patent/JP2011181708A/ja
Publication of JP2011181708A5 publication Critical patent/JP2011181708A5/ja
Application granted granted Critical
Publication of JP5654760B2 publication Critical patent/JP5654760B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Light Receiving Elements (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2010044838A 2010-03-02 2010-03-02 光素子 Expired - Fee Related JP5654760B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010044838A JP5654760B2 (ja) 2010-03-02 2010-03-02 光素子
EP20110153651 EP2363893A2 (en) 2010-03-02 2011-02-08 Optical element, optical device and terahertz time-domain spectroscopic apparatus including the same
US13/031,014 US8759771B2 (en) 2010-03-02 2011-02-18 Optical element, and optical device and terahertz time-domain spectroscopic apparatus including the same
RU2011107929/28A RU2462790C1 (ru) 2010-03-02 2011-03-01 Оптический элемент, оптическое устройство и терагерцевое спектроскопическое устройство с разрешением по времени, включающее в себя это устройство
CN201110049029.5A CN102194914B (zh) 2010-03-02 2011-03-02 光学元件以及包含它的光学器件和太赫兹时域分光装置
KR20110018327A KR101385166B1 (ko) 2010-03-02 2011-03-02 광소자, 및 이것을 갖는 광장치 및 테라헤르츠 시간영역 분광장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010044838A JP5654760B2 (ja) 2010-03-02 2010-03-02 光素子

Publications (3)

Publication Number Publication Date
JP2011181708A JP2011181708A (ja) 2011-09-15
JP2011181708A5 JP2011181708A5 (enExample) 2014-04-03
JP5654760B2 true JP5654760B2 (ja) 2015-01-14

Family

ID=44227209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010044838A Expired - Fee Related JP5654760B2 (ja) 2010-03-02 2010-03-02 光素子

Country Status (6)

Country Link
US (1) US8759771B2 (enExample)
EP (1) EP2363893A2 (enExample)
JP (1) JP5654760B2 (enExample)
KR (1) KR101385166B1 (enExample)
CN (1) CN102194914B (enExample)
RU (1) RU2462790C1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP2013076618A (ja) * 2011-09-30 2013-04-25 Sony Corp 光伝導素子、レンズ、テラヘルツ放射顕微鏡及びデバイスの製造方法
RU2511070C1 (ru) * 2012-10-01 2014-04-10 Общество с ограниченной ответственностью "ТИДЕКС" Устройство визуализации источников терагерцового излучения
JP2014241517A (ja) * 2013-06-11 2014-12-25 キヤノン株式会社 テラヘルツ波を発生する装置、またはテラヘルツ波を検出する装置
JP2016192423A (ja) * 2015-03-30 2016-11-10 パイオニア株式会社 光伝導素子及び計測装置
EP3096180A1 (de) * 2015-05-20 2016-11-23 Philipps-Universität Marburg Verfahren zur verbreiterung des frequenzspektrums einer elektromagnetischen welle und bauelement zu seiner realisierung
DE102015112408A1 (de) * 2015-07-29 2017-02-02 Endress + Hauser Gmbh + Co. Kg Drucksensor und Verfahren zum Überwachen eines Drucksensors
JP6829517B2 (ja) * 2016-07-23 2021-02-10 国立大学法人千葉大学 赤外光素子
RU2657306C2 (ru) * 2016-10-07 2018-06-13 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Материал на основе InGaAs на подложках InP для фотопроводящих антенн
RU186068U1 (ru) * 2018-10-05 2018-12-28 Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) Сапфировая ячейка для внутриволноводной терагерцовой спектроскопии
DE102019135487A1 (de) * 2019-12-20 2021-06-24 Helmut Fischer GmbH Institut für Elektronik und Messtechnik Vorrichtung zum Senden und/oder Empfangen von Terahertz-Strahlung und Verwendung hiervon
JP2020198448A (ja) * 2020-08-26 2020-12-10 パイオニア株式会社 光伝導素子及び計測装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729017A (en) * 1996-05-31 1998-03-17 Lucent Technologies Inc. Terahertz generators and detectors
US7619263B2 (en) * 2003-04-08 2009-11-17 Sensor Electronic Technology, Inc. Method of radiation generation and manipulation
JP4794878B2 (ja) * 2004-03-26 2011-10-19 キヤノン株式会社 光伝導素子
US7615787B2 (en) * 2004-03-26 2009-11-10 Canon Kabushiki Kaisha Photo-semiconductor device and method of manufacturing the same
CN1993869A (zh) 2004-07-30 2007-07-04 佳能株式会社 光学半导体器件
JP2006086227A (ja) 2004-09-14 2006-03-30 Osaka Univ 光スイッチ
JP4481946B2 (ja) 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
JP4709059B2 (ja) 2006-04-28 2011-06-22 キヤノン株式会社 検査装置及び検査方法
RU2325729C1 (ru) * 2006-10-17 2008-05-27 Государственное образовательное учреждение высшего профессионального образования "Российский университет дружбы народов" (РУДН) Неохлаждаемый металлический болометр
KR101282775B1 (ko) * 2006-11-03 2013-07-05 엘지이노텍 주식회사 수직형 발광 소자 및 그 제조방법
US8067739B2 (en) * 2007-06-22 2011-11-29 Canon Kabushiki Kaisha Photoconductive element for generation and detection of terahertz wave
JP2010045157A (ja) 2008-08-12 2010-02-25 Kansai Electric Power Co Inc:The テラヘルツ電磁波放射素子およびテラヘルツ電磁波発生方法
JP5419411B2 (ja) * 2008-10-08 2014-02-19 キヤノン株式会社 テラヘルツ波発生素子
US8093139B2 (en) * 2008-12-11 2012-01-10 Anteos, Inc. Method for fabrication of aligned nanowire structures in semiconductor materials for electronic, optoelectronic, photonic and plasmonic devices

Also Published As

Publication number Publication date
EP2363893A2 (en) 2011-09-07
RU2462790C1 (ru) 2012-09-27
CN102194914B (zh) 2014-04-16
KR101385166B1 (ko) 2014-04-29
JP2011181708A (ja) 2011-09-15
US8759771B2 (en) 2014-06-24
US20110215245A1 (en) 2011-09-08
CN102194914A (zh) 2011-09-21
KR20110099649A (ko) 2011-09-08

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