KR101385166B1 - 광소자, 및 이것을 갖는 광장치 및 테라헤르츠 시간영역 분광장치 - Google Patents

광소자, 및 이것을 갖는 광장치 및 테라헤르츠 시간영역 분광장치 Download PDF

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KR101385166B1
KR101385166B1 KR20110018327A KR20110018327A KR101385166B1 KR 101385166 B1 KR101385166 B1 KR 101385166B1 KR 20110018327 A KR20110018327 A KR 20110018327A KR 20110018327 A KR20110018327 A KR 20110018327A KR 101385166 B1 KR101385166 B1 KR 101385166B1
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South Korea
Prior art keywords
light
semiconductor layer
substrate
optical device
terahertz
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KR20110018327A
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Korean (ko)
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KR20110099649A (ko
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토시히코 오우치
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Light Receiving Elements (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
KR20110018327A 2010-03-02 2011-03-02 광소자, 및 이것을 갖는 광장치 및 테라헤르츠 시간영역 분광장치 Expired - Fee Related KR101385166B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-044838 2010-03-02
JP2010044838A JP5654760B2 (ja) 2010-03-02 2010-03-02 光素子

Publications (2)

Publication Number Publication Date
KR20110099649A KR20110099649A (ko) 2011-09-08
KR101385166B1 true KR101385166B1 (ko) 2014-04-29

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KR20110018327A Expired - Fee Related KR101385166B1 (ko) 2010-03-02 2011-03-02 광소자, 및 이것을 갖는 광장치 및 테라헤르츠 시간영역 분광장치

Country Status (6)

Country Link
US (1) US8759771B2 (enExample)
EP (1) EP2363893A2 (enExample)
JP (1) JP5654760B2 (enExample)
KR (1) KR101385166B1 (enExample)
CN (1) CN102194914B (enExample)
RU (1) RU2462790C1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP2013076618A (ja) * 2011-09-30 2013-04-25 Sony Corp 光伝導素子、レンズ、テラヘルツ放射顕微鏡及びデバイスの製造方法
RU2511070C1 (ru) * 2012-10-01 2014-04-10 Общество с ограниченной ответственностью "ТИДЕКС" Устройство визуализации источников терагерцового излучения
JP2014241517A (ja) * 2013-06-11 2014-12-25 キヤノン株式会社 テラヘルツ波を発生する装置、またはテラヘルツ波を検出する装置
JP2016192423A (ja) * 2015-03-30 2016-11-10 パイオニア株式会社 光伝導素子及び計測装置
EP3096180A1 (de) * 2015-05-20 2016-11-23 Philipps-Universität Marburg Verfahren zur verbreiterung des frequenzspektrums einer elektromagnetischen welle und bauelement zu seiner realisierung
DE102015112408A1 (de) * 2015-07-29 2017-02-02 Endress + Hauser Gmbh + Co. Kg Drucksensor und Verfahren zum Überwachen eines Drucksensors
JP6829517B2 (ja) * 2016-07-23 2021-02-10 国立大学法人千葉大学 赤外光素子
RU2657306C2 (ru) * 2016-10-07 2018-06-13 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Материал на основе InGaAs на подложках InP для фотопроводящих антенн
RU186068U1 (ru) * 2018-10-05 2018-12-28 Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) Сапфировая ячейка для внутриволноводной терагерцовой спектроскопии
DE102019135487A1 (de) * 2019-12-20 2021-06-24 Helmut Fischer GmbH Institut für Elektronik und Messtechnik Vorrichtung zum Senden und/oder Empfangen von Terahertz-Strahlung und Verwendung hiervon
JP2020198448A (ja) * 2020-08-26 2020-12-10 パイオニア株式会社 光伝導素子及び計測装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080135856A1 (en) * 2006-11-03 2008-06-12 Lg Electronics Inc. Light emitting device having vertical topology and method for manufacturing the same
US20080315098A1 (en) * 2007-06-22 2008-12-25 Canon Kabushiki Kaisha Photoconductive element for generation and detection of terahertz wave
US20100013038A1 (en) * 2004-03-26 2010-01-21 Canon Kabushiki Kaisha Photo-semiconductor device and method of manufacturing the same
JP2010045157A (ja) * 2008-08-12 2010-02-25 Kansai Electric Power Co Inc:The テラヘルツ電磁波放射素子およびテラヘルツ電磁波発生方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729017A (en) * 1996-05-31 1998-03-17 Lucent Technologies Inc. Terahertz generators and detectors
US7619263B2 (en) * 2003-04-08 2009-11-17 Sensor Electronic Technology, Inc. Method of radiation generation and manipulation
JP4794878B2 (ja) * 2004-03-26 2011-10-19 キヤノン株式会社 光伝導素子
CN1993869A (zh) 2004-07-30 2007-07-04 佳能株式会社 光学半导体器件
JP2006086227A (ja) 2004-09-14 2006-03-30 Osaka Univ 光スイッチ
JP4481946B2 (ja) 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
JP4709059B2 (ja) 2006-04-28 2011-06-22 キヤノン株式会社 検査装置及び検査方法
RU2325729C1 (ru) * 2006-10-17 2008-05-27 Государственное образовательное учреждение высшего профессионального образования "Российский университет дружбы народов" (РУДН) Неохлаждаемый металлический болометр
JP5419411B2 (ja) * 2008-10-08 2014-02-19 キヤノン株式会社 テラヘルツ波発生素子
US8093139B2 (en) * 2008-12-11 2012-01-10 Anteos, Inc. Method for fabrication of aligned nanowire structures in semiconductor materials for electronic, optoelectronic, photonic and plasmonic devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100013038A1 (en) * 2004-03-26 2010-01-21 Canon Kabushiki Kaisha Photo-semiconductor device and method of manufacturing the same
US20080135856A1 (en) * 2006-11-03 2008-06-12 Lg Electronics Inc. Light emitting device having vertical topology and method for manufacturing the same
US20080315098A1 (en) * 2007-06-22 2008-12-25 Canon Kabushiki Kaisha Photoconductive element for generation and detection of terahertz wave
JP2010045157A (ja) * 2008-08-12 2010-02-25 Kansai Electric Power Co Inc:The テラヘルツ電磁波放射素子およびテラヘルツ電磁波発生方法

Also Published As

Publication number Publication date
EP2363893A2 (en) 2011-09-07
RU2462790C1 (ru) 2012-09-27
CN102194914B (zh) 2014-04-16
JP2011181708A (ja) 2011-09-15
JP5654760B2 (ja) 2015-01-14
US8759771B2 (en) 2014-06-24
US20110215245A1 (en) 2011-09-08
CN102194914A (zh) 2011-09-21
KR20110099649A (ko) 2011-09-08

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