RU2462790C1 - Оптический элемент, оптическое устройство и терагерцевое спектроскопическое устройство с разрешением по времени, включающее в себя это устройство - Google Patents

Оптический элемент, оптическое устройство и терагерцевое спектроскопическое устройство с разрешением по времени, включающее в себя это устройство Download PDF

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Publication number
RU2462790C1
RU2462790C1 RU2011107929/28A RU2011107929A RU2462790C1 RU 2462790 C1 RU2462790 C1 RU 2462790C1 RU 2011107929/28 A RU2011107929/28 A RU 2011107929/28A RU 2011107929 A RU2011107929 A RU 2011107929A RU 2462790 C1 RU2462790 C1 RU 2462790C1
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RU
Russia
Prior art keywords
light
semiconductor layer
optical element
electrodes
terahertz
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RU2011107929/28A
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English (en)
Russian (ru)
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Тосихико ОУТИ (JP)
Тосихико ОУТИ
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Кэнон Кабусики Кайся
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Light Receiving Elements (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
RU2011107929/28A 2010-03-02 2011-03-01 Оптический элемент, оптическое устройство и терагерцевое спектроскопическое устройство с разрешением по времени, включающее в себя это устройство RU2462790C1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-044838 2010-03-02
JP2010044838A JP5654760B2 (ja) 2010-03-02 2010-03-02 光素子

Publications (1)

Publication Number Publication Date
RU2462790C1 true RU2462790C1 (ru) 2012-09-27

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RU2011107929/28A RU2462790C1 (ru) 2010-03-02 2011-03-01 Оптический элемент, оптическое устройство и терагерцевое спектроскопическое устройство с разрешением по времени, включающее в себя это устройство

Country Status (6)

Country Link
US (1) US8759771B2 (enExample)
EP (1) EP2363893A2 (enExample)
JP (1) JP5654760B2 (enExample)
KR (1) KR101385166B1 (enExample)
CN (1) CN102194914B (enExample)
RU (1) RU2462790C1 (enExample)

Cited By (2)

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RU2511070C1 (ru) * 2012-10-01 2014-04-10 Общество с ограниченной ответственностью "ТИДЕКС" Устройство визуализации источников терагерцового излучения
RU186068U1 (ru) * 2018-10-05 2018-12-28 Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) Сапфировая ячейка для внутриволноводной терагерцовой спектроскопии

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JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP2013076618A (ja) * 2011-09-30 2013-04-25 Sony Corp 光伝導素子、レンズ、テラヘルツ放射顕微鏡及びデバイスの製造方法
JP2014241517A (ja) * 2013-06-11 2014-12-25 キヤノン株式会社 テラヘルツ波を発生する装置、またはテラヘルツ波を検出する装置
JP2016192423A (ja) * 2015-03-30 2016-11-10 パイオニア株式会社 光伝導素子及び計測装置
EP3096180A1 (de) * 2015-05-20 2016-11-23 Philipps-Universität Marburg Verfahren zur verbreiterung des frequenzspektrums einer elektromagnetischen welle und bauelement zu seiner realisierung
DE102015112408A1 (de) * 2015-07-29 2017-02-02 Endress + Hauser Gmbh + Co. Kg Drucksensor und Verfahren zum Überwachen eines Drucksensors
JP6829517B2 (ja) * 2016-07-23 2021-02-10 国立大学法人千葉大学 赤外光素子
RU2657306C2 (ru) * 2016-10-07 2018-06-13 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Материал на основе InGaAs на подложках InP для фотопроводящих антенн
DE102019135487A1 (de) * 2019-12-20 2021-06-24 Helmut Fischer GmbH Institut für Elektronik und Messtechnik Vorrichtung zum Senden und/oder Empfangen von Terahertz-Strahlung und Verwendung hiervon
JP2020198448A (ja) * 2020-08-26 2020-12-10 パイオニア株式会社 光伝導素子及び計測装置

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US5729017A (en) * 1996-05-31 1998-03-17 Lucent Technologies Inc. Terahertz generators and detectors
JP2006086227A (ja) * 2004-09-14 2006-03-30 Osaka Univ 光スイッチ
RU2325729C1 (ru) * 2006-10-17 2008-05-27 Государственное образовательное учреждение высшего профессионального образования "Российский университет дружбы народов" (РУДН) Неохлаждаемый металлический болометр
US7619263B2 (en) * 2003-04-08 2009-11-17 Sensor Electronic Technology, Inc. Method of radiation generation and manipulation

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JP4794878B2 (ja) * 2004-03-26 2011-10-19 キヤノン株式会社 光伝導素子
US7615787B2 (en) * 2004-03-26 2009-11-10 Canon Kabushiki Kaisha Photo-semiconductor device and method of manufacturing the same
CN1993869A (zh) 2004-07-30 2007-07-04 佳能株式会社 光学半导体器件
JP4481946B2 (ja) 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
JP4709059B2 (ja) 2006-04-28 2011-06-22 キヤノン株式会社 検査装置及び検査方法
KR101282775B1 (ko) * 2006-11-03 2013-07-05 엘지이노텍 주식회사 수직형 발광 소자 및 그 제조방법
US8067739B2 (en) * 2007-06-22 2011-11-29 Canon Kabushiki Kaisha Photoconductive element for generation and detection of terahertz wave
JP2010045157A (ja) 2008-08-12 2010-02-25 Kansai Electric Power Co Inc:The テラヘルツ電磁波放射素子およびテラヘルツ電磁波発生方法
JP5419411B2 (ja) * 2008-10-08 2014-02-19 キヤノン株式会社 テラヘルツ波発生素子
US8093139B2 (en) * 2008-12-11 2012-01-10 Anteos, Inc. Method for fabrication of aligned nanowire structures in semiconductor materials for electronic, optoelectronic, photonic and plasmonic devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729017A (en) * 1996-05-31 1998-03-17 Lucent Technologies Inc. Terahertz generators and detectors
US7619263B2 (en) * 2003-04-08 2009-11-17 Sensor Electronic Technology, Inc. Method of radiation generation and manipulation
JP2006086227A (ja) * 2004-09-14 2006-03-30 Osaka Univ 光スイッチ
RU2325729C1 (ru) * 2006-10-17 2008-05-27 Государственное образовательное учреждение высшего профессионального образования "Российский университет дружбы народов" (РУДН) Неохлаждаемый металлический болометр

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2511070C1 (ru) * 2012-10-01 2014-04-10 Общество с ограниченной ответственностью "ТИДЕКС" Устройство визуализации источников терагерцового излучения
RU186068U1 (ru) * 2018-10-05 2018-12-28 Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) Сапфировая ячейка для внутриволноводной терагерцовой спектроскопии

Also Published As

Publication number Publication date
EP2363893A2 (en) 2011-09-07
CN102194914B (zh) 2014-04-16
KR101385166B1 (ko) 2014-04-29
JP2011181708A (ja) 2011-09-15
JP5654760B2 (ja) 2015-01-14
US8759771B2 (en) 2014-06-24
US20110215245A1 (en) 2011-09-08
CN102194914A (zh) 2011-09-21
KR20110099649A (ko) 2011-09-08

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Effective date: 20170302