JP5649664B2 - 全ｎｍｏｓ−４トランジスタ不揮発性メモリセルのプログラム方法 - Google Patents

全ｎｍｏｓ−４トランジスタ不揮発性メモリセルのプログラム方法 Download PDF

Info

Publication number
JP5649664B2
JP5649664B2 JP2012551964A JP2012551964A JP5649664B2 JP 5649664 B2 JP5649664 B2 JP 5649664B2 JP 2012551964 A JP2012551964 A JP 2012551964A JP 2012551964 A JP2012551964 A JP 2012551964A JP 5649664 B2 JP5649664 B2 JP 5649664B2
Authority
JP
Japan
Prior art keywords
nmos
transistor
drain
voltage
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012551964A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013519180A5 (enExample
JP2013519180A (ja
Inventor
ポプレバイン パーベル
ポプレバイン パーベル
カーン ウメール
カーン ウメール
ジェームズ リン ヘニャン
ジェームズ リン ヘニャン
ジェイ フランクリン アンドリュー
ジェイ フランクリン アンドリュー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of JP2013519180A publication Critical patent/JP2013519180A/ja
Publication of JP2013519180A5 publication Critical patent/JP2013519180A5/ja
Application granted granted Critical
Publication of JP5649664B2 publication Critical patent/JP5649664B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2012551964A 2010-02-02 2010-11-29 全ｎｍｏｓ−４トランジスタ不揮発性メモリセルのプログラム方法 Active JP5649664B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/698,318 2010-02-02
US12/698,318 US8363469B1 (en) 2010-02-02 2010-02-02 All-NMOS 4-transistor non-volatile memory cell
PCT/US2010/058203 WO2011096977A2 (en) 2010-02-02 2010-11-29 All-nmos 4-transistor non-volatile memory cell

Publications (3)

Publication Number Publication Date
JP2013519180A JP2013519180A (ja) 2013-05-23
JP2013519180A5 JP2013519180A5 (enExample) 2014-01-16
JP5649664B2 true JP5649664B2 (ja) 2015-01-07

Family

ID=44356028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012551964A Active JP5649664B2 (ja) 2010-02-02 2010-11-29 全ｎｍｏｓ−４トランジスタ不揮発性メモリセルのプログラム方法

Country Status (5)

Country Link
US (1) US8363469B1 (enExample)
JP (1) JP5649664B2 (enExample)
CN (1) CN102741825B (enExample)
TW (1) TWI449047B (enExample)
WO (1) WO2011096977A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5556873B2 (ja) * 2012-10-19 2014-07-23 株式会社フローディア 不揮発性半導体記憶装置
CN103137201A (zh) * 2013-03-21 2013-06-05 苏州宽温电子科技有限公司 一种标准逻辑工艺兼容的差分架构nvm存储器单元
US8953380B1 (en) 2013-12-02 2015-02-10 Cypress Semiconductor Corporation Systems, methods, and apparatus for memory cells with common source lines
US9558804B2 (en) * 2014-07-23 2017-01-31 Namlab Ggmbh Charge storage ferroelectric memory hybrid and erase scheme
US9524785B2 (en) * 2015-04-01 2016-12-20 Ememory Technology Inc. Memory unit with voltage passing device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7007A (en) * 1850-01-08 Improvement in machinery for making cotton cordage
US9026A (en) * 1852-06-15 Improvement in imitation stone
US6137723A (en) 1998-04-01 2000-10-24 National Semiconductor Corporation Memory device having erasable Frohmann-Bentchkowsky EPROM cells that use a well-to-floating gate coupled voltage during erasure
US6188594B1 (en) 1999-06-09 2001-02-13 Neomagic Corp. Reduced-pitch 6-transistor NMOS content-addressable-memory cell
US6434040B1 (en) 2001-02-23 2002-08-13 Silicon Access Networks Loadless NMOS four transistor SRAM cell
CN1292484C (zh) * 2002-07-31 2006-12-27 连邦科技股份有限公司 非易失性静态随机存取存储器存储单元
US6920061B2 (en) 2003-08-27 2005-07-19 International Business Machines Corporation Loadless NMOS four transistor dynamic dual Vt SRAM cell
US6903978B1 (en) 2003-09-17 2005-06-07 National Semiconductor Corporation Method of PMOS stacked-gate memory cell programming enhancement utilizing stair-like pulses of control gate voltage
US6985386B1 (en) * 2004-07-08 2006-01-10 National Semiconductor Corporation Programming method for nonvolatile memory cell
US6992927B1 (en) 2004-07-08 2006-01-31 National Semiconductor Corporation Nonvolatile memory cell
US7164606B1 (en) 2005-07-15 2007-01-16 National Semiconductor Corporation Reverse fowler-nordheim tunneling programming for non-volatile memory cell
CN1941203A (zh) * 2005-09-29 2007-04-04 松下电器产业株式会社 非易失性半导体存储装置
JP2007123830A (ja) * 2005-09-29 2007-05-17 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置
US7483310B1 (en) * 2006-11-02 2009-01-27 National Semiconductor Corporation System and method for providing high endurance low cost CMOS compatible EEPROM devices
US7453726B1 (en) 2007-01-23 2008-11-18 National Semiconductor Corporation Non-volatile memory cell with improved programming technique and density
JP5228195B2 (ja) * 2007-04-20 2013-07-03 インターチップ株式会社 不揮発性メモリ内蔵シフトレジスタ
JP5266443B2 (ja) * 2008-04-18 2013-08-21 インターチップ株式会社 不揮発性メモリセル及び不揮発性メモリセル内蔵データラッチ

Also Published As

Publication number Publication date
WO2011096977A3 (en) 2011-09-29
TWI449047B (zh) 2014-08-11
WO2011096977A2 (en) 2011-08-11
US8363469B1 (en) 2013-01-29
CN102741825B (zh) 2015-05-20
TW201133489A (en) 2011-10-01
CN102741825A (zh) 2012-10-17
JP2013519180A (ja) 2013-05-23

Similar Documents

Publication Publication Date Title
JP5235422B2 (ja) 不揮発性半導体記憶装置
CN102741936B (zh) 五晶体管非易失性存储器单元
CN109817624B (zh) 存储器及其操作方法
WO2007143498A2 (en) Non-volatile memory embedded in a conventional logic process and methods for operating same
JP2005510889A (ja) バイト消去可能なｅｅｐｒｏｍメモリを有する半導体デバイス
TW201320312A (zh) 非揮發記憶單元
KR20170037996A (ko) 분리형 게이트 플래시 메모리 셀들의 섹터의 일부분의 소거를 억제하는 시스템 및 방법
JP5649664B2 (ja) 全ｎｍｏｓ−４トランジスタ不揮発性メモリセルのプログラム方法
JP3895855B2 (ja) 不揮発性半導体記憶装置
EP3143625A1 (en) System and method for reducing disturbances during programming of split gate flash memory cells
US8599618B2 (en) High voltage tolerant row driver
US7167392B1 (en) Non-volatile memory cell with improved programming technique
US7164606B1 (en) Reverse fowler-nordheim tunneling programming for non-volatile memory cell
KR20010072189A (ko) 반도체 디바이스
JPH0577189B2 (enExample)
US20120014183A1 (en) 3 transistor (n/p/n) non-volatile memory cell without program disturb
JP5714094B2 (ja) Ｐｍｏｓ・ｎｍｏｓ・ｐｍｏｓ・ｎｍｏｓ構造を備えた４トランジスタ不揮発性メモリセル
US8159877B2 (en) Method of directly reading output voltage to determine data stored in a non-volatile memory cell
JP4215018B2 (ja) 不揮発性半導体記憶装置
JP4907758B2 (ja) 半導体記憶装置とその制御方法
JP2885413B2 (ja) 不揮発性半導体メモリ装置
JPH02133960A (ja) 書込可能不揮発性半導体記憶装置
JPH07230695A (ja) 不揮発性半導体記憶装置
JP3639415B2 (ja) 不揮発性半導体メモリ装置
JPS63127495A (ja) 半導体集積回路装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131125

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131125

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140430

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140610

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140909

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140917

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141009

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141014

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141017

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141111

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141111

R150 Certificate of patent or registration of utility model

Ref document number: 5649664

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250