TWI449047B - 全－ｎｍｏｓ ４－電晶體非揮發性記憶體單元 - Google Patents

全－ｎｍｏｓ ４－電晶體非揮發性記憶體單元 Download PDF

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Publication number
TWI449047B
TWI449047B TW099145116A TW99145116A TWI449047B TW I449047 B TWI449047 B TW I449047B TW 099145116 A TW099145116 A TW 099145116A TW 99145116 A TW99145116 A TW 99145116A TW I449047 B TWI449047 B TW I449047B
Authority
TW
Taiwan
Prior art keywords
electrode
transistor
nmos
body region
voltage
Prior art date
Application number
TW099145116A
Other languages
English (en)
Chinese (zh)
Other versions
TW201133489A (en
Inventor
Pavel Poplevine
Umer Khan
Hengyang James Lin
Andrew J Franklin
Original Assignee
Nat Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Semiconductor Corp filed Critical Nat Semiconductor Corp
Publication of TW201133489A publication Critical patent/TW201133489A/zh
Application granted granted Critical
Publication of TWI449047B publication Critical patent/TWI449047B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW099145116A 2010-02-02 2010-12-22 全－ｎｍｏｓ ４－電晶體非揮發性記憶體單元 TWI449047B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/698,318 US8363469B1 (en) 2010-02-02 2010-02-02 All-NMOS 4-transistor non-volatile memory cell

Publications (2)

Publication Number Publication Date
TW201133489A TW201133489A (en) 2011-10-01
TWI449047B true TWI449047B (zh) 2014-08-11

Family

ID=44356028

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099145116A TWI449047B (zh) 2010-02-02 2010-12-22 全－ｎｍｏｓ ４－電晶體非揮發性記憶體單元

Country Status (5)

Country Link
US (1) US8363469B1 (enExample)
JP (1) JP5649664B2 (enExample)
CN (1) CN102741825B (enExample)
TW (1) TWI449047B (enExample)
WO (1) WO2011096977A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5556873B2 (ja) * 2012-10-19 2014-07-23 株式会社フローディア 不揮発性半導体記憶装置
CN103137201A (zh) * 2013-03-21 2013-06-05 苏州宽温电子科技有限公司 一种标准逻辑工艺兼容的差分架构nvm存储器单元
US8953380B1 (en) 2013-12-02 2015-02-10 Cypress Semiconductor Corporation Systems, methods, and apparatus for memory cells with common source lines
US9558804B2 (en) * 2014-07-23 2017-01-31 Namlab Ggmbh Charge storage ferroelectric memory hybrid and erase scheme
US9524785B2 (en) * 2015-04-01 2016-12-20 Ememory Technology Inc. Memory unit with voltage passing device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6434040B1 (en) * 2001-02-23 2002-08-13 Silicon Access Networks Loadless NMOS four transistor SRAM cell
US20050047196A1 (en) * 2003-08-27 2005-03-03 International Business Machines Corporation Loadless NMOS four transistor dynamic dual Vt SRAM cell
US6903978B1 (en) * 2003-09-17 2005-06-07 National Semiconductor Corporation Method of PMOS stacked-gate memory cell programming enhancement utilizing stair-like pulses of control gate voltage
US6985386B1 (en) * 2004-07-08 2006-01-10 National Semiconductor Corporation Programming method for nonvolatile memory cell
US6992927B1 (en) * 2004-07-08 2006-01-31 National Semiconductor Corporation Nonvolatile memory cell
US7164606B1 (en) * 2005-07-15 2007-01-16 National Semiconductor Corporation Reverse fowler-nordheim tunneling programming for non-volatile memory cell
US7483310B1 (en) * 2006-11-02 2009-01-27 National Semiconductor Corporation System and method for providing high endurance low cost CMOS compatible EEPROM devices
US20090129162A1 (en) * 2007-01-23 2009-05-21 Pavel Poplevine Method of making a non-volatile memory (NVM) cell structure and program biasing techniques for the NVM cell structure
US7623380B2 (en) * 2005-09-29 2009-11-24 Panasonic Corporation Nonvolatile semiconductor memory device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7007A (en) * 1850-01-08 Improvement in machinery for making cotton cordage
US9026A (en) * 1852-06-15 Improvement in imitation stone
US6137723A (en) 1998-04-01 2000-10-24 National Semiconductor Corporation Memory device having erasable Frohmann-Bentchkowsky EPROM cells that use a well-to-floating gate coupled voltage during erasure
US6188594B1 (en) 1999-06-09 2001-02-13 Neomagic Corp. Reduced-pitch 6-transistor NMOS content-addressable-memory cell
CN1292484C (zh) * 2002-07-31 2006-12-27 连邦科技股份有限公司 非易失性静态随机存取存储器存储单元
CN1941203A (zh) * 2005-09-29 2007-04-04 松下电器产业株式会社 非易失性半导体存储装置
JP5228195B2 (ja) * 2007-04-20 2013-07-03 インターチップ株式会社 不揮発性メモリ内蔵シフトレジスタ
JP5266443B2 (ja) * 2008-04-18 2013-08-21 インターチップ株式会社 不揮発性メモリセル及び不揮発性メモリセル内蔵データラッチ

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6434040B1 (en) * 2001-02-23 2002-08-13 Silicon Access Networks Loadless NMOS four transistor SRAM cell
US20050047196A1 (en) * 2003-08-27 2005-03-03 International Business Machines Corporation Loadless NMOS four transistor dynamic dual Vt SRAM cell
US6903978B1 (en) * 2003-09-17 2005-06-07 National Semiconductor Corporation Method of PMOS stacked-gate memory cell programming enhancement utilizing stair-like pulses of control gate voltage
US6985386B1 (en) * 2004-07-08 2006-01-10 National Semiconductor Corporation Programming method for nonvolatile memory cell
US6992927B1 (en) * 2004-07-08 2006-01-31 National Semiconductor Corporation Nonvolatile memory cell
US7164606B1 (en) * 2005-07-15 2007-01-16 National Semiconductor Corporation Reverse fowler-nordheim tunneling programming for non-volatile memory cell
US7623380B2 (en) * 2005-09-29 2009-11-24 Panasonic Corporation Nonvolatile semiconductor memory device
US7483310B1 (en) * 2006-11-02 2009-01-27 National Semiconductor Corporation System and method for providing high endurance low cost CMOS compatible EEPROM devices
US20090129162A1 (en) * 2007-01-23 2009-05-21 Pavel Poplevine Method of making a non-volatile memory (NVM) cell structure and program biasing techniques for the NVM cell structure

Also Published As

Publication number Publication date
WO2011096977A3 (en) 2011-09-29
WO2011096977A2 (en) 2011-08-11
US8363469B1 (en) 2013-01-29
JP5649664B2 (ja) 2015-01-07
CN102741825B (zh) 2015-05-20
TW201133489A (en) 2011-10-01
CN102741825A (zh) 2012-10-17
JP2013519180A (ja) 2013-05-23

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