JP5649583B2 - 加工終点検出方法及び装置 - Google Patents

加工終点検出方法及び装置 Download PDF

Info

Publication number
JP5649583B2
JP5649583B2 JP2011534861A JP2011534861A JP5649583B2 JP 5649583 B2 JP5649583 B2 JP 5649583B2 JP 2011534861 A JP2011534861 A JP 2011534861A JP 2011534861 A JP2011534861 A JP 2011534861A JP 5649583 B2 JP5649583 B2 JP 5649583B2
Authority
JP
Japan
Prior art keywords
sample
tem
value
stem
end point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011534861A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012507728A (ja
Inventor
ジェー． ヤング リチャード
ジェー． ヤング リチャード
ピーターソン ブレナン
ピーターソン ブレナン
モリアーティ マイケル
モリアーティ マイケル
ジョハネス ピーター ジェラルダス スチャンパーズ ルドルフ
ジョハネス ピーター ジェラルダス スチャンパーズ ルドルフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Publication of JP2012507728A publication Critical patent/JP2012507728A/ja
Application granted granted Critical
Publication of JP5649583B2 publication Critical patent/JP5649583B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24455—Transmitted particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30466—Detecting endpoint of process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
JP2011534861A 2008-10-31 2009-11-02 加工終点検出方法及び装置 Active JP5649583B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11039408P 2008-10-31 2008-10-31
US61/110,394 2008-10-31
PCT/US2009/063007 WO2010051546A2 (en) 2008-10-31 2009-11-02 Measurement and endpointing of sample thickness

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014228898A Division JP5852725B2 (ja) 2008-10-31 2014-11-11 加工終点検出方法

Publications (2)

Publication Number Publication Date
JP2012507728A JP2012507728A (ja) 2012-03-29
JP5649583B2 true JP5649583B2 (ja) 2015-01-07

Family

ID=42129591

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011534861A Active JP5649583B2 (ja) 2008-10-31 2009-11-02 加工終点検出方法及び装置
JP2014228898A Active JP5852725B2 (ja) 2008-10-31 2014-11-11 加工終点検出方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014228898A Active JP5852725B2 (ja) 2008-10-31 2014-11-11 加工終点検出方法

Country Status (5)

Country Link
US (2) US8170832B2 (enExample)
EP (2) EP2351062A4 (enExample)
JP (2) JP5649583B2 (enExample)
CN (2) CN102272878B (enExample)
WO (1) WO2010051546A2 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102272878B (zh) 2008-10-31 2014-07-23 Fei公司 样本厚度的测量和终点确定
WO2011011661A2 (en) * 2009-07-24 2011-01-27 Omniprobe, Inc. Method and apparatus for the monitoring of sample milling in a charged particle instrument
DE112011102731T5 (de) * 2010-08-18 2013-08-22 Hitachi High-Technologies Corporation Elektronenstrahlvorrichtung
EP2461347A1 (en) * 2010-12-06 2012-06-06 Fei Company Detector system for transmission electron microscope
JP5473891B2 (ja) * 2010-12-27 2014-04-16 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び試料作製方法
JP2013057638A (ja) * 2011-09-09 2013-03-28 Sumitomo Rubber Ind Ltd ゴム材料のシミュレーション方法
CN102538670B (zh) * 2011-10-31 2015-04-22 上海显恒光电科技股份有限公司 一种微米级电子束焦斑尺寸的光学测量装置及其方法
JP6062628B2 (ja) * 2011-12-08 2017-01-18 株式会社日立ハイテクサイエンス 薄膜試料作製装置及び方法
JP2013167505A (ja) * 2012-02-15 2013-08-29 Sumitomo Electric Ind Ltd 薄膜試料の作製方法及び膜厚測定方法
CN104428867B (zh) * 2012-07-16 2018-10-16 Fei 公司 用于聚焦离子束处理的终点确定
US10110854B2 (en) 2012-07-27 2018-10-23 Gatan, Inc. Ion beam sample preparation apparatus and methods
US10465293B2 (en) 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
TWI461653B (zh) * 2013-02-06 2014-11-21 Inotera Memories Inc 測量樣本尺寸的方法
WO2014155557A1 (ja) * 2013-03-27 2014-10-02 富士通株式会社 試料測定装置、試料測定方法、半導体装置の評価方法、およびコンピュータプログラム
GB201308436D0 (en) 2013-05-10 2013-06-19 Oxford Instr Nanotechnology Tools Ltd Metrology for preparation of thin samples
CZ304824B6 (cs) * 2013-07-11 2014-11-19 Tescan Orsay Holding, A.S. Způsob opracovávání vzorku v zařízení se dvěma nebo více částicovými svazky a zařízení k jeho provádění
US8933401B1 (en) * 2013-10-25 2015-01-13 Lawrence Livermore National Security, Llc System and method for compressive scanning electron microscopy
EP2869328A1 (en) * 2013-10-29 2015-05-06 Fei Company Differential imaging with pattern recognition for process automation of cross sectioning applications
CN103868773A (zh) * 2014-03-24 2014-06-18 上海华力微电子有限公司 透射电镜样品的制作方法
US9594035B2 (en) * 2014-04-25 2017-03-14 Revera, Incorporated Silicon germanium thickness and composition determination using combined XPS and XRF technologies
CN106233420B (zh) * 2014-05-09 2018-10-16 株式会社日立高新技术 试样加工方法及带电粒子束装置
US9779914B2 (en) * 2014-07-25 2017-10-03 E.A. Fischione Instruments, Inc. Apparatus for preparing a sample for microscopy
US11004656B2 (en) * 2014-10-15 2021-05-11 Gatan, Inc. Methods and apparatus for determining, using, and indicating ion beam working properties
WO2016067039A1 (en) * 2014-10-29 2016-05-06 Omniprobe, Inc Rapid tem sample preparation method with backside fib milling
CN104697836B (zh) * 2015-03-30 2018-04-06 上海华力微电子有限公司 一种tem样品制备方法
EP3104155A1 (en) 2015-06-09 2016-12-14 FEI Company Method of analyzing surface modification of a specimen in a charged-particle microscope
NL2017844A (en) * 2015-12-22 2017-06-28 Asml Netherlands Bv Focus control arrangement and method
US9837246B1 (en) 2016-07-22 2017-12-05 Fei Company Reinforced sample for transmission electron microscope
US9779910B1 (en) 2016-09-13 2017-10-03 Qualcomm Incorporated Utilization of voltage contrast during sample preparation for transmission electron microscopy
DE102017209423A1 (de) * 2017-06-02 2018-12-06 Carl Zeiss Microscopy Gmbh Elektronenstrahltomographieverfahren und Elektronenstrahltomographiesystem
CN107894357B (zh) * 2017-11-08 2021-03-05 上海华力微电子有限公司 一种自动化的样本减薄方法
EP3531439B1 (en) 2018-02-22 2020-06-24 FEI Company Intelligent pre-scan in scanning transmission charged particle microscopy
DE102018117492B3 (de) 2018-07-19 2019-10-02 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben einer Mehrzahl von FIB-SEM-Systemen
EP3648138A1 (en) * 2018-10-31 2020-05-06 FEI Company Measurement and endpointing of sample thickness
CN109350109B (zh) * 2018-12-06 2022-03-04 北京锐视康科技发展有限公司 多功能牙科扫描系统
WO2020160788A1 (en) * 2019-02-08 2020-08-13 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e. V. Apparatus and method for preparing a sample for transmission microscopy investigations by ion beam initiated ablation
CN111024017B (zh) * 2019-12-04 2021-10-15 中国电子科技集团公司第十三研究所 一种膜厚样片及膜厚样片的制备方法
US12347707B2 (en) * 2020-02-27 2025-07-01 Hitachi High-Tech Corporation Semiconductor analysis system
US11171048B2 (en) * 2020-03-12 2021-11-09 Fei Company Adaptive endpoint detection for automated delayering of semiconductor samples
NL2026054B1 (en) * 2020-07-13 2022-03-15 Delmic Ip B V Method and apparatus for micromachining a sample using a Focused Ion Beam
CN113008171A (zh) * 2021-03-19 2021-06-22 长江存储科技有限责任公司 一种样品厚度的确定方法
WO2022216970A1 (en) * 2021-04-07 2022-10-13 Protochips, Inc. Systems and methods of metadata and image management for reviewing data from transmission electron microscope (tem) sessions
US11455333B1 (en) 2021-04-07 2022-09-27 Protochips, Inc. Systems and methods of metadata and image management for reviewing data from transmission electron microscope (TEM) sessions
CN113324488B (zh) * 2021-05-14 2023-04-18 长江存储科技有限责任公司 一种厚度测量方法和系统
NL2032641B1 (en) 2022-07-29 2024-02-06 Univ Delft Tech Method and apparatus for in-situ sample quality inspection in cryogenic focused ion beam milling
US20240047281A1 (en) * 2022-08-03 2024-02-08 Nxp Usa, Inc. Structure and method for test-point access in a semiconductor
DE102023134086A1 (de) * 2023-12-06 2025-06-12 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts, Verfahren zum Bestimmen eines Bearbeitungspunktes, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung von mindestens einem der Verfahren

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4629898A (en) * 1981-10-02 1986-12-16 Oregon Graduate Center Electron and ion beam apparatus and passivation milling
JP2602287B2 (ja) * 1988-07-01 1997-04-23 株式会社日立製作所 Ｘ線マスクの欠陥検査方法及びその装置
US5093572A (en) * 1989-11-02 1992-03-03 Mitsubishi Denki Kabushiki Kaisha Scanning electron microscope for observation of cross section and method of observing cross section employing the same
US6051834A (en) * 1991-05-15 2000-04-18 Hitachi, Ltd. Electron microscope
JP3119959B2 (ja) * 1993-02-05 2000-12-25 セイコーインスツルメンツ株式会社 集束イオンビーム装置および加工観察装置
DE4421517A1 (de) * 1993-06-28 1995-01-05 Schlumberger Technologies Inc Verfahren zum Abtrag oder Auftrag von Material mittels eines Partikelstrahls und Vorrichtung zu seiner Durchführung
JP3221797B2 (ja) 1994-06-14 2001-10-22 株式会社日立製作所 試料作成方法及びその装置
JP3058394B2 (ja) * 1994-06-23 2000-07-04 シャープ株式会社 透過電子顕微鏡用断面試料作成方法
DE29507225U1 (de) * 1995-04-29 1995-07-13 Grünewald, Wolfgang, Dr.rer.nat., 09122 Chemnitz Ionenstrahlpräparationsvorrichtung für die Elektronenmikroskopie
JPH10214587A (ja) * 1997-01-30 1998-08-11 Hitachi Ltd 立体観察用走査透過電子顕微鏡及び立体画像形成システム
JP3987208B2 (ja) * 1998-07-03 2007-10-03 株式会社日立製作所 走査透過型電子顕微鏡
US6276987B1 (en) * 1998-08-04 2001-08-21 International Business Machines Corporation Chemical mechanical polishing endpoint process control
US6768110B2 (en) 2000-06-21 2004-07-27 Gatan, Inc. Ion beam milling system and method for electron microscopy specimen preparation
US6905623B2 (en) * 2000-12-15 2005-06-14 Credence Systems Corporation Precise, in-situ endpoint detection for charged particle beam processing
US6815359B2 (en) * 2001-03-28 2004-11-09 Advanced Micro Devices, Inc. Process for improving the etch stability of ultra-thin photoresist
US6774365B2 (en) * 2001-03-28 2004-08-10 Advanced Micro Devices, Inc. SEM inspection and analysis of patterned photoresist features
US6589709B1 (en) * 2001-03-28 2003-07-08 Advanced Micro Devices, Inc. Process for preventing deformation of patterned photoresist features
US6630288B2 (en) * 2001-03-28 2003-10-07 Advanced Micro Devices, Inc. Process for forming sub-lithographic photoresist features by modification of the photoresist surface
US6716571B2 (en) * 2001-03-28 2004-04-06 Advanced Micro Devices, Inc. Selective photoresist hardening to facilitate lateral trimming
US6653231B2 (en) * 2001-03-28 2003-11-25 Advanced Micro Devices, Inc. Process for reducing the critical dimensions of integrated circuit device features
US6828259B2 (en) * 2001-03-28 2004-12-07 Advanced Micro Devices, Inc. Enhanced transistor gate using E-beam radiation
US6683316B2 (en) * 2001-08-01 2004-01-27 Aspex, Llc Apparatus for correlating an optical image and a SEM image and method of use thereof
JP3776887B2 (ja) * 2003-01-07 2006-05-17 株式会社日立ハイテクノロジーズ 電子線装置
JP4153388B2 (ja) * 2003-08-29 2008-09-24 Ｔｄｋ株式会社 試料測定方法
KR100594234B1 (ko) * 2003-12-05 2006-06-30 삼성전자주식회사 편광 현상을 이용하여 해상도를 향상시킬 수 있는 포토마스크 및 그 제조방법
KR101065074B1 (ko) * 2004-01-16 2011-09-15 삼성전자주식회사 투과전자현미경 성분 맵핑용 표준시료 및 이를 이용한 투과전자현미경 성분 맵핑방법
US7141791B2 (en) * 2004-09-07 2006-11-28 Kla-Tencor Technologies Corporation Apparatus and method for E-beam dark field imaging
JP4664041B2 (ja) * 2004-10-27 2011-04-06 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置及び試料作製方法
JP4181561B2 (ja) * 2005-05-12 2008-11-19 松下電器産業株式会社 半導体加工方法および加工装置
CN101105463B (zh) * 2006-07-10 2010-12-22 中芯国际集成电路制造(上海)有限公司 Tem样品最小有效厚度的检测方法
CN101153833B (zh) 2006-09-30 2010-09-29 中芯国际集成电路制造(上海)有限公司 透射电子显微镜样品的制作方法
EP2106555B1 (en) * 2006-10-20 2015-01-07 FEI Company Method for s/tem sample analysis
US7834315B2 (en) * 2007-04-23 2010-11-16 Omniprobe, Inc. Method for STEM sample inspection in a charged particle beam instrument
US8835845B2 (en) * 2007-06-01 2014-09-16 Fei Company In-situ STEM sample preparation
JP5873227B2 (ja) * 2007-12-06 2016-03-01 エフ・イ−・アイ・カンパニー デコレーションを用いたスライス・アンド・ビュー
EP2149897A1 (en) 2008-07-31 2010-02-03 FEI Company Method for milling and end-pointing a sample
CN102272878B (zh) 2008-10-31 2014-07-23 Fei公司 样本厚度的测量和终点确定
EP2233907A1 (en) * 2009-03-27 2010-09-29 FEI Company Forming an image while milling a work piece

Also Published As

Publication number Publication date
JP5852725B2 (ja) 2016-02-03
CN102394209A (zh) 2012-03-28
US20120187285A1 (en) 2012-07-26
US8170832B2 (en) 2012-05-01
CN102272878B (zh) 2014-07-23
WO2010051546A3 (en) 2010-08-05
EP2351062A4 (en) 2012-10-31
JP2015038509A (ja) 2015-02-26
CN102394209B (zh) 2015-01-14
EP2351062A2 (en) 2011-08-03
US20100116977A1 (en) 2010-05-13
EP2367195A3 (en) 2012-11-21
US9184025B2 (en) 2015-11-10
EP2367195A2 (en) 2011-09-21
CN102272878A (zh) 2011-12-07
WO2010051546A2 (en) 2010-05-06
JP2012507728A (ja) 2012-03-29
EP2367195B1 (en) 2014-03-12

Similar Documents

Publication Publication Date Title
JP5649583B2 (ja) 加工終点検出方法及び装置
US10978272B2 (en) Measurement and endpointing of sample thickness
JP6188792B2 (ja) Ｔｅｍ観察用の薄片の調製
JP4158384B2 (ja) 半導体デバイスの製造工程監視方法及びそのシステム
JP5813413B2 (ja) シュリンク前形状推定方法およびｃｄ−ｓｅｍ装置
US10551827B2 (en) Hybrid inspection system for efficient process window discovery
KR101709433B1 (ko) 시료 관찰 장치
CN112602184A (zh) 确定图案化的高深宽比结构阵列中的倾斜角度
US7473911B2 (en) Specimen current mapper
US12165840B2 (en) Ion beam delayering system and method, topographically enhanced delayered sample produced thereby, and imaging methods and systems related thereto
JP6372948B2 (ja) 試料の自動配向
JP4791333B2 (ja) パターン寸法計測方法及び走査型透過荷電粒子顕微鏡
EP4616147A1 (en) Improved precision in stereoscopic measurements using a pre-deposition layer
KR20240167021A (ko) 매립된 피처의 오버레이 측정을 위한 전자 빔 최적화
JP7598872B2 (ja) Ｚ高さの絶対値を利用したツール間の相乗効果
CN115689980B (zh) 在半导体样本中的侧向凹部测量
Yamane et al. Multi-technique reference measurement of critical dimension and shape for model validation in scanning electron microscopy

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120919

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120928

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130726

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130726

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131023

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131030

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131121

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131128

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131220

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140127

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140919

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141020

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141029

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141111

R150 Certificate of patent or registration of utility model

Ref document number: 5649583

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250