JP5638205B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5638205B2
JP5638205B2 JP2009142973A JP2009142973A JP5638205B2 JP 5638205 B2 JP5638205 B2 JP 5638205B2 JP 2009142973 A JP2009142973 A JP 2009142973A JP 2009142973 A JP2009142973 A JP 2009142973A JP 5638205 B2 JP5638205 B2 JP 5638205B2
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JP
Japan
Prior art keywords
semiconductor device
region
substrate
electrode pad
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009142973A
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English (en)
Japanese (ja)
Other versions
JP2011003570A (ja
JP2011003570A5 (enExample
Inventor
慎一 内田
慎一 内田
隆介 橋本
隆介 橋本
冨留宮　正之
正之 冨留宮
公夫 細木
公夫 細木
英雄 大庭
英雄 大庭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009142973A priority Critical patent/JP5638205B2/ja
Priority to US12/801,076 priority patent/US8310034B2/en
Publication of JP2011003570A publication Critical patent/JP2011003570A/ja
Publication of JP2011003570A5 publication Critical patent/JP2011003570A5/ja
Application granted granted Critical
Publication of JP5638205B2 publication Critical patent/JP5638205B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/255—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for operation at multiple different frequencies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009142973A 2009-06-16 2009-06-16 半導体装置 Expired - Fee Related JP5638205B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009142973A JP5638205B2 (ja) 2009-06-16 2009-06-16 半導体装置
US12/801,076 US8310034B2 (en) 2009-06-16 2010-05-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009142973A JP5638205B2 (ja) 2009-06-16 2009-06-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2011003570A JP2011003570A (ja) 2011-01-06
JP2011003570A5 JP2011003570A5 (enExample) 2012-06-14
JP5638205B2 true JP5638205B2 (ja) 2014-12-10

Family

ID=43305706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009142973A Expired - Fee Related JP5638205B2 (ja) 2009-06-16 2009-06-16 半導体装置

Country Status (2)

Country Link
US (1) US8310034B2 (enExample)
JP (1) JP5638205B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103107153B (zh) * 2011-11-15 2016-04-06 精材科技股份有限公司 晶片封装体及其形成方法
US20130328158A1 (en) * 2012-06-11 2013-12-12 Broadcom Corporation Semiconductor seal ring design for noise isolation
US9245842B2 (en) * 2012-11-29 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices having guard ring structure and methods of manufacture thereof
US8970001B2 (en) * 2012-12-28 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Guard ring design for maintaining signal integrity
US20140340853A1 (en) * 2013-05-14 2014-11-20 Infineon Technologies Ag Safety Device
JP6323643B2 (ja) * 2013-11-07 2018-05-16 セイコーエプソン株式会社 半導体回路装置、発振器、電子機器及び移動体
WO2015145507A1 (ja) * 2014-03-28 2015-10-01 株式会社ソシオネクスト 半導体集積回路
US9601354B2 (en) * 2014-08-27 2017-03-21 Nxp Usa, Inc. Semiconductor manufacturing for forming bond pads and seal rings
US9881881B2 (en) * 2015-07-24 2018-01-30 Qualcomm Incorporated Conductive seal ring for power bus distribution
JP6679444B2 (ja) 2016-08-12 2020-04-15 ルネサスエレクトロニクス株式会社 半導体装置
CN107146784B (zh) * 2017-05-12 2021-01-26 京东方科技集团股份有限公司 阵列基板和包括其的嵌入式触摸显示面板
KR102442933B1 (ko) * 2017-08-21 2022-09-15 삼성전자주식회사 3차원 반도체 장치
IT201700103511A1 (it) * 2017-09-15 2019-03-15 St Microelectronics Srl Dispositivo microelettronico dotato di connessioni protette e relativo processo di fabbricazione
WO2019092938A1 (ja) * 2017-11-13 2019-05-16 オリンパス株式会社 半導体基板、半導体基板積層体および内視鏡
WO2020161080A1 (en) * 2019-02-08 2020-08-13 Ams International Ag Reducing susceptibility of integrated circuits and sensors to radio frequency interference
US12506089B2 (en) * 2022-06-03 2025-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures with improved reliability

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103859A (ja) 1987-03-18 1989-04-20 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
JPH0430470A (ja) * 1990-05-25 1992-02-03 Nec Corp 半導体集積回路
JP2833568B2 (ja) * 1996-02-28 1998-12-09 日本電気株式会社 半導体集積回路
JP4502173B2 (ja) * 2003-02-03 2010-07-14 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP4519418B2 (ja) 2003-04-28 2010-08-04 ルネサスエレクトロニクス株式会社 半導体装置
US7851860B2 (en) 2004-03-26 2010-12-14 Honeywell International Inc. Techniques to reduce substrate cross talk on mixed signal and RF circuit design
JP4689244B2 (ja) 2004-11-16 2011-05-25 ルネサスエレクトロニクス株式会社 半導体装置
US7615841B2 (en) * 2005-05-02 2009-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Design structure for coupling noise prevention
JP2007059676A (ja) * 2005-08-25 2007-03-08 Matsushita Electric Ind Co Ltd 半導体装置
JP2008071931A (ja) 2006-09-14 2008-03-27 Toshiba Corp 半導体装置
JP5147044B2 (ja) * 2007-01-16 2013-02-20 ルネサスエレクトロニクス株式会社 半導体装置

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Publication number Publication date
JP2011003570A (ja) 2011-01-06
US8310034B2 (en) 2012-11-13
US20100314727A1 (en) 2010-12-16

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