JP2011003570A5 - - Google Patents

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Publication number
JP2011003570A5
JP2011003570A5 JP2009142973A JP2009142973A JP2011003570A5 JP 2011003570 A5 JP2011003570 A5 JP 2011003570A5 JP 2009142973 A JP2009142973 A JP 2009142973A JP 2009142973 A JP2009142973 A JP 2009142973A JP 2011003570 A5 JP2011003570 A5 JP 2011003570A5
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JP
Japan
Prior art keywords
semiconductor device
region
electrode pad
conductive film
interlayer insulating
Prior art date
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Application number
JP2009142973A
Other languages
English (en)
Japanese (ja)
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JP5638205B2 (ja
JP2011003570A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009142973A priority Critical patent/JP5638205B2/ja
Priority claimed from JP2009142973A external-priority patent/JP5638205B2/ja
Priority to US12/801,076 priority patent/US8310034B2/en
Publication of JP2011003570A publication Critical patent/JP2011003570A/ja
Publication of JP2011003570A5 publication Critical patent/JP2011003570A5/ja
Application granted granted Critical
Publication of JP5638205B2 publication Critical patent/JP5638205B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009142973A 2009-06-16 2009-06-16 半導体装置 Active JP5638205B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009142973A JP5638205B2 (ja) 2009-06-16 2009-06-16 半導体装置
US12/801,076 US8310034B2 (en) 2009-06-16 2010-05-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009142973A JP5638205B2 (ja) 2009-06-16 2009-06-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2011003570A JP2011003570A (ja) 2011-01-06
JP2011003570A5 true JP2011003570A5 (enExample) 2012-06-14
JP5638205B2 JP5638205B2 (ja) 2014-12-10

Family

ID=43305706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009142973A Active JP5638205B2 (ja) 2009-06-16 2009-06-16 半導体装置

Country Status (2)

Country Link
US (1) US8310034B2 (enExample)
JP (1) JP5638205B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103107153B (zh) * 2011-11-15 2016-04-06 精材科技股份有限公司 晶片封装体及其形成方法
US20130328158A1 (en) * 2012-06-11 2013-12-12 Broadcom Corporation Semiconductor seal ring design for noise isolation
US9245842B2 (en) * 2012-11-29 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices having guard ring structure and methods of manufacture thereof
US8970001B2 (en) * 2012-12-28 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Guard ring design for maintaining signal integrity
US20140340853A1 (en) * 2013-05-14 2014-11-20 Infineon Technologies Ag Safety Device
JP6323643B2 (ja) * 2013-11-07 2018-05-16 セイコーエプソン株式会社 半導体回路装置、発振器、電子機器及び移動体
WO2015145507A1 (ja) * 2014-03-28 2015-10-01 株式会社ソシオネクスト 半導体集積回路
US9601354B2 (en) * 2014-08-27 2017-03-21 Nxp Usa, Inc. Semiconductor manufacturing for forming bond pads and seal rings
US9881881B2 (en) * 2015-07-24 2018-01-30 Qualcomm Incorporated Conductive seal ring for power bus distribution
JP6679444B2 (ja) * 2016-08-12 2020-04-15 ルネサスエレクトロニクス株式会社 半導体装置
CN107146784B (zh) * 2017-05-12 2021-01-26 京东方科技集团股份有限公司 阵列基板和包括其的嵌入式触摸显示面板
KR102442933B1 (ko) * 2017-08-21 2022-09-15 삼성전자주식회사 3차원 반도체 장치
IT201700103511A1 (it) * 2017-09-15 2019-03-15 St Microelectronics Srl Dispositivo microelettronico dotato di connessioni protette e relativo processo di fabbricazione
WO2019092938A1 (ja) * 2017-11-13 2019-05-16 オリンパス株式会社 半導体基板、半導体基板積層体および内視鏡
WO2020161080A1 (en) * 2019-02-08 2020-08-13 Ams International Ag Reducing susceptibility of integrated circuits and sensors to radio frequency interference
US20230395531A1 (en) * 2022-06-03 2023-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Structures With Improved Reliability

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103859A (ja) 1987-03-18 1989-04-20 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
JPH0430470A (ja) * 1990-05-25 1992-02-03 Nec Corp 半導体集積回路
JP2833568B2 (ja) * 1996-02-28 1998-12-09 日本電気株式会社 半導体集積回路
JP4502173B2 (ja) * 2003-02-03 2010-07-14 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP4519418B2 (ja) 2003-04-28 2010-08-04 ルネサスエレクトロニクス株式会社 半導体装置
US7851860B2 (en) 2004-03-26 2010-12-14 Honeywell International Inc. Techniques to reduce substrate cross talk on mixed signal and RF circuit design
JP4689244B2 (ja) 2004-11-16 2011-05-25 ルネサスエレクトロニクス株式会社 半導体装置
US7615841B2 (en) * 2005-05-02 2009-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Design structure for coupling noise prevention
JP2007059676A (ja) * 2005-08-25 2007-03-08 Matsushita Electric Ind Co Ltd 半導体装置
JP2008071931A (ja) 2006-09-14 2008-03-27 Toshiba Corp 半導体装置
JP5147044B2 (ja) 2007-01-16 2013-02-20 ルネサスエレクトロニクス株式会社 半導体装置

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